Raman scattering and high resolution electron microscopy studies of metal-organic chemical vapor deposition-tungsten disulfide thin films

Metal-organic chemical vapor deposition (MOCVD) using tungsten hexacarbonyl (W(CO) 6) and H 2S as precursors was employed to prepare tungsten disulfide (WS 2) thin films on Si substrates. Various degrees of preferred orientation as characterized by the WS 2 crystallites with their basal planes grown...

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Veröffentlicht in:	Thin solid films 1998-12, Vol.335 (1), p.106-111
Hauptverfasser:	Chung, J-W., Adib, A., Dai, Z.R., Adib, K., Ohuchi, F.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology First order Raman High resolution electron microscopy Lattice image Materials science Metal-organic chemical vapor deposition Methods of deposition of films and coatings film growth and epitaxy Physics Preferred orientation Raman scattering Second order Raman Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Tungsten disulfide
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