Room-temperature deposition of indium tin oxide thin films with plasma ion-assisted evaporation
The electrical and optical properties of indium tin oxide (ITO) thin films deposited by plasma ion-assisted evaporation are reported. With deposition at room temperature using certain ion-source parameters ITO films with an electrical resistivity of 5×10 −6 Ω m and an absorptance at 550 nm of less t...
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| Veröffentlicht in: | Thin solid films 1998-12, Vol.335 (1), p.1-5 |
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| container_title | Thin solid films |
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| creator | Laux, S. Kaiser, N. Zöller, A. Götzelmann, R. Lauth, H. Bernitzki, H. |
| description | The electrical and optical properties of indium tin oxide (ITO) thin films deposited by plasma ion-assisted evaporation are reported. With deposition at room temperature using certain ion-source parameters ITO films with an electrical resistivity of 5×10
−6 Ω m and an absorptance at 550 nm of less than 5% for 300 nm film thickness were obtained. Variation of oxygen pressure during deposition results in different band gap energies and different resistivities. The complex index of refraction was determined using a dispersion model suitable for explaining the particular properties of ITO in the visible and near infrared spectral range. |
| doi_str_mv | 10.1016/S0040-6090(98)00861-X |
| format | Article |
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−6 Ω m and an absorptance at 550 nm of less than 5% for 300 nm film thickness were obtained. Variation of oxygen pressure during deposition results in different band gap energies and different resistivities. 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With deposition at room temperature using certain ion-source parameters ITO films with an electrical resistivity of 5×10
−6 Ω m and an absorptance at 550 nm of less than 5% for 300 nm film thickness were obtained. Variation of oxygen pressure during deposition results in different band gap energies and different resistivities. The complex index of refraction was determined using a dispersion model suitable for explaining the particular properties of ITO in the visible and near infrared spectral range.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/S0040-6090(98)00861-X</doi><tpages>5</tpages></addata></record> |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Indium tin oxide (ITO) Ion and electron beam-assisted deposition ion plating Ion-assisted deposition Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Other inorganic semiconductors Other semiconductors Physics Transparent semiconductors |
| title | Room-temperature deposition of indium tin oxide thin films with plasma ion-assisted evaporation |
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