Features of electrical charge transfer in porous silicon

Thermostimulated depolarization (TSD) spectra of porous silicon (PS) in the range of temperatures 77-450 K were investigated. Several wide bands of TSD current with different values referred to different types of PS charged defects were discovered. A comparative investigation of TSD spectra of PS la...

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Veröffentlicht in:	Semiconductor physics, quantum electronics, and optoelectronics quantum electronics, and optoelectronics, 2001-02, Vol.4 (1), p.24-28
1. Verfasser:	Monastyrskii, L.S.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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