Effect of the hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered hydrogenated amorphous silicon films
Infrared absorption and optical transmission combined with photothermal deflection spectroscopy experiments have been used to study the effect of the hydrogen bonding and content on the opto-electronic properties of hydrogenated amorphous silicon (a-Si:H) films prepared by radiofrequency magnetron s...
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| Veröffentlicht in: | Solid state communications 2001-10, Vol.120 (5), p.243-248 |
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| creator | Daouahi, M Ben Othmane, A Zellama, K Zeinert, A Essamet, M Bouchriha, H |
| description | Infrared absorption and optical transmission combined with photothermal deflection spectroscopy experiments have been used to study the effect of the hydrogen bonding and content on the opto-electronic properties of hydrogenated amorphous silicon (a-Si:H) films prepared by radiofrequency magnetron sputtering at high deposition rates (11–15
Å/s), at the same substrate temperature (250°C) and with different H
2 dilution percentage. The results indicate that the electronic properties, in terms of density of defects and disorder, are dependent on both the relative proportion of the isolated monohydride Si–H bonds and the presence in the films of structural inhomogeneities, while the optical gap is found to be rather controlled by the total bonded hydrogen content C
H. Optimized films with quite low density of defects and disorder and which contain the highest proportion (∼38%) of isolated monohydride complexes are obtained. An increase in the proportion of the polyhydride and/or the clustered monohydride configurations gives rise to more gas states and disorder and favors the formation of higher structural inhomogeneities such as voids. |
| doi_str_mv | 10.1016/S0038-1098(01)00350-7 |
| format | Article |
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Å/s), at the same substrate temperature (250°C) and with different H
2 dilution percentage. The results indicate that the electronic properties, in terms of density of defects and disorder, are dependent on both the relative proportion of the isolated monohydride Si–H bonds and the presence in the films of structural inhomogeneities, while the optical gap is found to be rather controlled by the total bonded hydrogen content C
H. Optimized films with quite low density of defects and disorder and which contain the highest proportion (∼38%) of isolated monohydride complexes are obtained. An increase in the proportion of the polyhydride and/or the clustered monohydride configurations gives rise to more gas states and disorder and favors the formation of higher structural inhomogeneities such as voids.</description><identifier>ISSN: 0038-1098</identifier><identifier>EISSN: 1879-2766</identifier><identifier>DOI: 10.1016/S0038-1098(01)00350-7</identifier><identifier>CODEN: SSCOA4</identifier><language>eng</language><publisher>Oxford: Elsevier Ltd</publisher><subject>A. Disordered systems ; A. Semiconductors ; Amorphous semiconductors ; Amorphous semiconductors, metallic glasses, glasses ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; D. Electronic states (localized) ; D. Optical properties ; Disordered solids ; Electron states ; Electronic structure of disordered solids ; Exact sciences and technology ; Infrared and raman spectra and scattering ; Materials science ; Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) ; Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials and thin films ; Physics ; Specific materials</subject><ispartof>Solid state communications, 2001-10, Vol.120 (5), p.243-248</ispartof><rights>2001 Elsevier Science Ltd</rights><rights>2001 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-fcde60227d836bfeafc5f022b252f8f3bb22b4d1e42bed801a52910075256ad83</citedby><cites>FETCH-LOGICAL-c367t-fcde60227d836bfeafc5f022b252f8f3bb22b4d1e42bed801a52910075256ad83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0038-1098(01)00350-7$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27922,27923,45993</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1124794$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Daouahi, M</creatorcontrib><creatorcontrib>Ben Othmane, A</creatorcontrib><creatorcontrib>Zellama, K</creatorcontrib><creatorcontrib>Zeinert, A</creatorcontrib><creatorcontrib>Essamet, M</creatorcontrib><creatorcontrib>Bouchriha, H</creatorcontrib><title>Effect of the hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered hydrogenated amorphous silicon films</title><title>Solid state communications</title><description>Infrared absorption and optical transmission combined with photothermal deflection spectroscopy experiments have been used to study the effect of the hydrogen bonding and content on the opto-electronic properties of hydrogenated amorphous silicon (a-Si:H) films prepared by radiofrequency magnetron sputtering at high deposition rates (11–15
Å/s), at the same substrate temperature (250°C) and with different H
2 dilution percentage. The results indicate that the electronic properties, in terms of density of defects and disorder, are dependent on both the relative proportion of the isolated monohydride Si–H bonds and the presence in the films of structural inhomogeneities, while the optical gap is found to be rather controlled by the total bonded hydrogen content C
H. Optimized films with quite low density of defects and disorder and which contain the highest proportion (∼38%) of isolated monohydride complexes are obtained. An increase in the proportion of the polyhydride and/or the clustered monohydride configurations gives rise to more gas states and disorder and favors the formation of higher structural inhomogeneities such as voids.</description><subject>A. Disordered systems</subject><subject>A. Semiconductors</subject><subject>Amorphous semiconductors</subject><subject>Amorphous semiconductors, metallic glasses, glasses</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>D. Electronic states (localized)</subject><subject>D. Optical properties</subject><subject>Disordered solids</subject><subject>Electron states</subject><subject>Electronic structure of disordered solids</subject><subject>Exact sciences and technology</subject><subject>Infrared and raman spectra and scattering</subject><subject>Materials science</subject><subject>Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)</subject><subject>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Physics</subject><subject>Specific materials</subject><issn>0038-1098</issn><issn>1879-2766</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNqFkc9qGzEQxkVJoY7bRyjoEEJ62FTS_tH6FEJIm0Agh7ZnoZVGtsqutJHkgJ-kr9uxHZJjTtLA75tvvhlCvnJ2yRnvvv9irO4rzlb9BePfsGhZJT-QBe_lqhKy607I4hX5RE5z_ssYk73kC_Lv1jkwhUZHywboZmdTXEOgQwzWhzXVwVITQ4GATDgwcS6xghFVKQZv6JziDKl4yPsuSVsfXYKnLQSzo5NeB9iDNM_bUiCBfTXRBQs9xTRv4jbT7EePVtT5ccqfyUenxwxfXt4l-fPj9vfNXfXw-PP-5vqhMnUnS-WMhY4JIW1fd4MD7UzrsB5EK1zv6mHAf2M5NGIA2zOuW7HiGL4VbadRtCTnx76YAkfORU0-GxhHHQCHUqKTohZNjWB7BE2KOSdwak5-0mmnOFP7M6jDGdR-x4pxdTiDkqg7ezHQ2ejRJR2Mz29iLhq5ahC7OmKAYZ89JJWNxw2C9Qk3rWz07xj9B6c0oLM</recordid><startdate>20011008</startdate><enddate>20011008</enddate><creator>Daouahi, M</creator><creator>Ben Othmane, A</creator><creator>Zellama, K</creator><creator>Zeinert, A</creator><creator>Essamet, M</creator><creator>Bouchriha, H</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20011008</creationdate><title>Effect of the hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered hydrogenated amorphous silicon films</title><author>Daouahi, M ; Ben Othmane, A ; Zellama, K ; Zeinert, A ; Essamet, M ; Bouchriha, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-fcde60227d836bfeafc5f022b252f8f3bb22b4d1e42bed801a52910075256ad83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>A. 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Optical properties</topic><topic>Disordered solids</topic><topic>Electron states</topic><topic>Electronic structure of disordered solids</topic><topic>Exact sciences and technology</topic><topic>Infrared and raman spectra and scattering</topic><topic>Materials science</topic><topic>Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)</topic><topic>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of bulk materials and thin films</topic><topic>Physics</topic><topic>Specific materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Daouahi, M</creatorcontrib><creatorcontrib>Ben Othmane, A</creatorcontrib><creatorcontrib>Zellama, K</creatorcontrib><creatorcontrib>Zeinert, A</creatorcontrib><creatorcontrib>Essamet, M</creatorcontrib><creatorcontrib>Bouchriha, H</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid state communications</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Daouahi, M</au><au>Ben Othmane, A</au><au>Zellama, K</au><au>Zeinert, A</au><au>Essamet, M</au><au>Bouchriha, H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of the hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered hydrogenated amorphous silicon films</atitle><jtitle>Solid state communications</jtitle><date>2001-10-08</date><risdate>2001</risdate><volume>120</volume><issue>5</issue><spage>243</spage><epage>248</epage><pages>243-248</pages><issn>0038-1098</issn><eissn>1879-2766</eissn><coden>SSCOA4</coden><abstract>Infrared absorption and optical transmission combined with photothermal deflection spectroscopy experiments have been used to study the effect of the hydrogen bonding and content on the opto-electronic properties of hydrogenated amorphous silicon (a-Si:H) films prepared by radiofrequency magnetron sputtering at high deposition rates (11–15
Å/s), at the same substrate temperature (250°C) and with different H
2 dilution percentage. The results indicate that the electronic properties, in terms of density of defects and disorder, are dependent on both the relative proportion of the isolated monohydride Si–H bonds and the presence in the films of structural inhomogeneities, while the optical gap is found to be rather controlled by the total bonded hydrogen content C
H. Optimized films with quite low density of defects and disorder and which contain the highest proportion (∼38%) of isolated monohydride complexes are obtained. An increase in the proportion of the polyhydride and/or the clustered monohydride configurations gives rise to more gas states and disorder and favors the formation of higher structural inhomogeneities such as voids.</abstract><cop>Oxford</cop><pub>Elsevier Ltd</pub><doi>10.1016/S0038-1098(01)00350-7</doi><tpages>6</tpages></addata></record> |
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| subjects | A. Disordered systems A. Semiconductors Amorphous semiconductors Amorphous semiconductors, metallic glasses, glasses Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology D. Electronic states (localized) D. Optical properties Disordered solids Electron states Electronic structure of disordered solids Exact sciences and technology Infrared and raman spectra and scattering Materials science Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics Specific materials |
| title | Effect of the hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered hydrogenated amorphous silicon films |
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