FABRICATION AND CHARACTERIZATION OF METAL-FERROELECTRIC-METAL-INSULATOR-SEMICONDUCTOR (MFMIS) STRUCTURES USING FERROELECTRIC (Bi, La)4Ti3O12 FILMS

FABRICATION AND CHARACTERIZATION OF METAL-FERROELECTRIC-METAL-INSULATOR-SEMICONDUCTOR (MFMIS) STRUCTURES USING FERROELECTRIC (Bi, La)4Ti3O12 FILMS

Authors have fabricated and characterized Pt/(Bi, La)4Ti3O12(BLT)/Pt/Ti/SiO2/Si metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structures for ferroelectric-gate transistor applications. BLT films fabricated using the metalorganic decomposition (MOD) technique at 750 C have excellent elect...

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Veröffentlicht in:Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 9B, pp. 5576-5579. 2001 Part 1. Vol. 40, no. 9B, pp. 5576-5579. 2001, 2001, Vol.40 (9B), p.5576-5579
Hauptverfasser: Tokumitsu, E, Isobe, T, Kijima, T, Ishiwara, H
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container_title Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 9B, pp. 5576-5579. 2001
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creator Tokumitsu, E
Isobe, T
Kijima, T
Ishiwara, H
description Authors have fabricated and characterized Pt/(Bi, La)4Ti3O12(BLT)/Pt/Ti/SiO2/Si metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structures for ferroelectric-gate transistor applications. BLT films fabricated using the metalorganic decomposition (MOD) technique at 750 C have excellent electrical properties. Remanent polarization as large as 30 mu C/cm2 can be obtained. In the memory window increases with the area ratio SF:SM of the MFMIS structure and that a large memory window (3 V) can be obtained for a voltage sweep of plus/minus 5 V for MFMIS structures with an area ratio SF:SM of 1:15. In addition, MFMIS structures with an area ratio SF:SM of 1:15 have good data retention characteristics. 15 refs.
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title FABRICATION AND CHARACTERIZATION OF METAL-FERROELECTRIC-METAL-INSULATOR-SEMICONDUCTOR (MFMIS) STRUCTURES USING FERROELECTRIC (Bi, La)4Ti3O12 FILMS
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