Effect of process variables on the structure, residual stress, and hardness of sputtered nanocrystalline nickel films
Nanocrystalline nickel films of about 0.1 μm thickness grown by sputtering with and without substrate bias possessed average grain sizes of 9–25 nm. Variation in substrate bias at room and liquid nitrogen temperature of deposition strongly affected grain structure and size distribution. Qualitative...
Gespeichert in:
Veröffentlicht in: | Journal of materials research 2001-04, Vol.16 (4), p.1010-1027 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 1027 |
---|---|
container_issue | 4 |
container_start_page | 1010 |
container_title | Journal of materials research |
container_volume | 16 |
creator | Mitra, R. Hoffman, R. A. Madan, A. Weertman, J. R. |
description | Nanocrystalline nickel films of about 0.1 μm thickness grown by sputtering with and without substrate bias possessed average grain sizes of 9–25 nm. Variation in substrate bias at room and liquid nitrogen temperature of deposition strongly affected grain structure and size distribution. Qualitative studies of film surfaces showed variation in roughness and porosity level with substrate bias and film thickness (maximum of 8 μm). The films had tensile residual stress, which varied with deposition conditions. The hardness values were much higher than those of coarse-grained nickel but decreased with an increase in the film thickness because of grain growth. |
doi_str_mv | 10.1557/JMR.2001.0142 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_26713713</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cupid>10_1557_JMR_2001_0142</cupid><sourcerecordid>26713713</sourcerecordid><originalsourceid>FETCH-LOGICAL-c344t-c889550dea30720dd0266158e7e506e09a044d4f4bbca59d97d35466a051163e3</originalsourceid><addsrcrecordid>eNp1kM9LHDEYhkOx4Go9es_Jk7Pm98wcZdG1ZaUoeg7Z5JsazWbWJCP1v28GpT0VAh-E53s_3gehU0qWVMr24sft_ZIRQpeECvYFLRgRopGcqQO0IF0nGtZTcYiOcn6ulCStWKDpahjAFjwOeJ9GCznjN5O82QbIeIy4PAHOJU22TAnOcYLs3WTC_FfZc2yiw08muThv1pC8n0qBBA5HE0eb3nMxIfgIOHr7AgEPPuzyN_R1MCHDyec8Ro_XVw-rm2bzc_19dblpLBeiNLbreimJA8NJy4hzhClFZQctSKKA9KY2dGIQ2601snd967gUShkiKVUc-DE6-8it3V4nyEXvfLYQgokwTlkz1VJeXwWbD9CmMecEg94nvzPpXVOiZ7m6ytWzXD3L_cf7XOD3X9ikF61a3kqt1nf69m5zw1a80-vKX3zmm902efcL9PM4pVjL_-fCH5PBi_8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26713713</pqid></control><display><type>article</type><title>Effect of process variables on the structure, residual stress, and hardness of sputtered nanocrystalline nickel films</title><source>SpringerNature Complete Journals</source><creator>Mitra, R. ; Hoffman, R. A. ; Madan, A. ; Weertman, J. R.</creator><creatorcontrib>Mitra, R. ; Hoffman, R. A. ; Madan, A. ; Weertman, J. R.</creatorcontrib><description>Nanocrystalline nickel films of about 0.1 μm thickness grown by sputtering with and without substrate bias possessed average grain sizes of 9–25 nm. Variation in substrate bias at room and liquid nitrogen temperature of deposition strongly affected grain structure and size distribution. Qualitative studies of film surfaces showed variation in roughness and porosity level with substrate bias and film thickness (maximum of 8 μm). The films had tensile residual stress, which varied with deposition conditions. The hardness values were much higher than those of coarse-grained nickel but decreased with an increase in the film thickness because of grain growth.</description><identifier>ISSN: 0884-2914</identifier><identifier>EISSN: 2044-5326</identifier><identifier>DOI: 10.1557/JMR.2001.0142</identifier><language>eng</language><publisher>New York, USA: Cambridge University Press</publisher><ispartof>Journal of materials research, 2001-04, Vol.16 (4), p.1010-1027</ispartof><rights>Copyright © Materials Research Society 2001</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c344t-c889550dea30720dd0266158e7e506e09a044d4f4bbca59d97d35466a051163e3</citedby><cites>FETCH-LOGICAL-c344t-c889550dea30720dd0266158e7e506e09a044d4f4bbca59d97d35466a051163e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Mitra, R.</creatorcontrib><creatorcontrib>Hoffman, R. A.</creatorcontrib><creatorcontrib>Madan, A.</creatorcontrib><creatorcontrib>Weertman, J. R.</creatorcontrib><title>Effect of process variables on the structure, residual stress, and hardness of sputtered nanocrystalline nickel films</title><title>Journal of materials research</title><addtitle>J. Mater. Res</addtitle><description>Nanocrystalline nickel films of about 0.1 μm thickness grown by sputtering with and without substrate bias possessed average grain sizes of 9–25 nm. Variation in substrate bias at room and liquid nitrogen temperature of deposition strongly affected grain structure and size distribution. Qualitative studies of film surfaces showed variation in roughness and porosity level with substrate bias and film thickness (maximum of 8 μm). The films had tensile residual stress, which varied with deposition conditions. The hardness values were much higher than those of coarse-grained nickel but decreased with an increase in the film thickness because of grain growth.</description><issn>0884-2914</issn><issn>2044-5326</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNp1kM9LHDEYhkOx4Go9es_Jk7Pm98wcZdG1ZaUoeg7Z5JsazWbWJCP1v28GpT0VAh-E53s_3gehU0qWVMr24sft_ZIRQpeECvYFLRgRopGcqQO0IF0nGtZTcYiOcn6ulCStWKDpahjAFjwOeJ9GCznjN5O82QbIeIy4PAHOJU22TAnOcYLs3WTC_FfZc2yiw08muThv1pC8n0qBBA5HE0eb3nMxIfgIOHr7AgEPPuzyN_R1MCHDyec8Ro_XVw-rm2bzc_19dblpLBeiNLbreimJA8NJy4hzhClFZQctSKKA9KY2dGIQ2601snd967gUShkiKVUc-DE6-8it3V4nyEXvfLYQgokwTlkz1VJeXwWbD9CmMecEg94nvzPpXVOiZ7m6ytWzXD3L_cf7XOD3X9ikF61a3kqt1nf69m5zw1a80-vKX3zmm902efcL9PM4pVjL_-fCH5PBi_8</recordid><startdate>20010401</startdate><enddate>20010401</enddate><creator>Mitra, R.</creator><creator>Hoffman, R. A.</creator><creator>Madan, A.</creator><creator>Weertman, J. R.</creator><general>Cambridge University Press</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20010401</creationdate><title>Effect of process variables on the structure, residual stress, and hardness of sputtered nanocrystalline nickel films</title><author>Mitra, R. ; Hoffman, R. A. ; Madan, A. ; Weertman, J. R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-c889550dea30720dd0266158e7e506e09a044d4f4bbca59d97d35466a051163e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mitra, R.</creatorcontrib><creatorcontrib>Hoffman, R. A.</creatorcontrib><creatorcontrib>Madan, A.</creatorcontrib><creatorcontrib>Weertman, J. R.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of materials research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mitra, R.</au><au>Hoffman, R. A.</au><au>Madan, A.</au><au>Weertman, J. R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of process variables on the structure, residual stress, and hardness of sputtered nanocrystalline nickel films</atitle><jtitle>Journal of materials research</jtitle><addtitle>J. Mater. Res</addtitle><date>2001-04-01</date><risdate>2001</risdate><volume>16</volume><issue>4</issue><spage>1010</spage><epage>1027</epage><pages>1010-1027</pages><issn>0884-2914</issn><eissn>2044-5326</eissn><abstract>Nanocrystalline nickel films of about 0.1 μm thickness grown by sputtering with and without substrate bias possessed average grain sizes of 9–25 nm. Variation in substrate bias at room and liquid nitrogen temperature of deposition strongly affected grain structure and size distribution. Qualitative studies of film surfaces showed variation in roughness and porosity level with substrate bias and film thickness (maximum of 8 μm). The films had tensile residual stress, which varied with deposition conditions. The hardness values were much higher than those of coarse-grained nickel but decreased with an increase in the film thickness because of grain growth.</abstract><cop>New York, USA</cop><pub>Cambridge University Press</pub><doi>10.1557/JMR.2001.0142</doi><tpages>18</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0884-2914 |
ispartof | Journal of materials research, 2001-04, Vol.16 (4), p.1010-1027 |
issn | 0884-2914 2044-5326 |
language | eng |
recordid | cdi_proquest_miscellaneous_26713713 |
source | SpringerNature Complete Journals |
title | Effect of process variables on the structure, residual stress, and hardness of sputtered nanocrystalline nickel films |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T14%3A26%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20process%20variables%20on%20the%20structure,%20residual%20stress,%20and%20hardness%20of%20sputtered%20nanocrystalline%20nickel%20films&rft.jtitle=Journal%20of%20materials%20research&rft.au=Mitra,%20R.&rft.date=2001-04-01&rft.volume=16&rft.issue=4&rft.spage=1010&rft.epage=1027&rft.pages=1010-1027&rft.issn=0884-2914&rft.eissn=2044-5326&rft_id=info:doi/10.1557/JMR.2001.0142&rft_dat=%3Cproquest_cross%3E26713713%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=26713713&rft_id=info:pmid/&rft_cupid=10_1557_JMR_2001_0142&rfr_iscdi=true |