Metastable misfit-induced relaxation structures of close-packed heteroepitaxial films

Conventional and O-mediated Cu film growth on Ru(0001) is studied by means of STM and LEED at temperatures between 300 and 550 K. At temperatures above 500 K and for a Cu film thickness above three monolayers, misfit-induced strain is almost completely released via a slight rotation of the film latt...

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Veröffentlicht in:	Surface science 1998-04, Vol.401 (3), p.434-444
Hauptverfasser:	Meinel, K, Wolter, H, Ammer, Ch, Neddermeyer, H
Format:	Artikel
Sprache:	eng
Schlagworte:	Copper Cross-disciplinary physics: materials science rheology Epitaxy Exact sciences and technology Low energy electron diffraction Materials science Methods of deposition of films and coatings film growth and epitaxy Oxygen Physics Reconstruction Ruthenium Scanning tunneling microscopy Surface structure
Online-Zugang:	Volltext
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