An in situ and ex situ ellipsometry comparison of the interfaces of Si and GaAs resulting from thermal and plasma oxidation

A combination of in situ spectroscopic ellipsometry (SE) and real time ellipsometry (RTE) along with ex situ spectroscopic immersion ellipsometry (SIE) measurements were performed in order to compare the Si and GaAs-oxide interfaces produced by thermal and electron cyclotron resonance (ECR) plasma o...

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Veröffentlicht in:	Thin solid films 1998-02, Vol.313 (1-2), p.454-458
Hauptverfasser:	Lefebvre, P.R., Zhao, C., Irene, E.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	ECR plasma Ellipsometry GaAs Oxidation
Online-Zugang:	Volltext
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