Impact ionization and hot-electron injection derived consistently from Boltzmann transport

We develop a quantitative model of the impact-ionization and hot-electron-injection processes in MOS devices from first principles. We begin by modeling hot-electron transport in the drain-to-channel depletion region using the spatially varying Boltzmann transport equation, and we analytically find...

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Veröffentlicht in:	VLSI design (Yverdon, Switzerland) Switzerland), 1998-01, Vol.8 (1-4), p.455-461
Hauptverfasser:	Hasler, Paul, Andreou, Andreas G, Diorio, Chris, Minch, Bradley A, Mead, Carver A
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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