Impedance properties of high-frequency pin diodes

New results of rf and microwave PIN diode modeling are presented which help to predict and explain impedance–frequency characteristics of multilayer semiconductor control devices at low and high power levels. Two techniques of different complexity based on modified physical–topological and equivalen...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Solid-state electronics 1998-01, Vol.42 (1), p.121-128
Hauptverfasser:	Lebedev, I.V., Shnitnikov, A.S., Dyakov, I.V., Borisova, N.A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!