Analytical model for electrical and thermal transients of self-heating semiconductor devices
Transients of self-heating semiconductor devices are theoretically investigated based on a feedback circuit model, which is composed of three sub-circuits describing the isothermal electrical characteristics, thermal impedance, and temperature dependence of the electrical characteristics of the devi...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 1998-12, Vol.46 (12), p.2258-2263 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 2263 |
|---|---|
| container_issue | 12 |
| container_start_page | 2258 |
| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 46 |
| creator | Yu Zhu Twynam, J.K. Yagura, M. Hasegawa, M. Hasegawa, T. Eguchi, Y. Yamada, A. Suematsu, E. Sakuno, K. Sato, H. Hashizume, N. |
| description | Transients of self-heating semiconductor devices are theoretically investigated based on a feedback circuit model, which is composed of three sub-circuits describing the isothermal electrical characteristics, thermal impedance, and temperature dependence of the electrical characteristics of the devices, respectively. Analytical expressions of the frequency and transient responses have been derived for both the electrical and thermal characteristics of self-heating devices, yielding accurate methods to extract the thermal time constant in both the time and frequency domains. The model is verified by the transient electrical-response measurement of a GaInP/GaAs heterojunction bipolar transistor. |
| doi_str_mv | 10.1109/22.739207 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_26660635</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>739207</ieee_id><sourcerecordid>28441894</sourcerecordid><originalsourceid>FETCH-LOGICAL-c368t-9fdc2cb1c9a25a1d182b93ecf8a28a7c117713aae9bda2cf56f465ec1fbe8c633</originalsourceid><addsrcrecordid>eNqN0TtPwzAQAGALgUR5DKxMmZAYUmwnfo1VxUuqxAIbUuRcztQoj2K7SP33BFKxwnSv7245Qi4YnTNGzQ3nc1UYTtUBmTEhVG6koodkRinTuSk1PSYnMb6PZSmonpHXRW_bXfJg26wbGmwzN4QMW4QUfpq2b7K0xtCNeQq2jx77FLPBZRFbl6_RJt-_jUXnYeibLaRxv8FPDxjPyJGzbcTzfTwlL3e3z8uHfPV0_7hcrHIopE65cQ1wqBkYy4VlDdO8NgWC05Zrq4AxpVhhLZq6sRyckK6UAoG5GjXIojglV9PdTRg-thhT1fkI2La2x2EbK66NEkrQf8CyZNqUf0MpJZWFGOH1BCEMMQZ01Sb4zoZdxWj1_ZGK82r6yGgvJ-sR8dfth196a4fs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26660635</pqid></control><display><type>article</type><title>Analytical model for electrical and thermal transients of self-heating semiconductor devices</title><source>IEEE Electronic Library (IEL)</source><creator>Yu Zhu ; Twynam, J.K. ; Yagura, M. ; Hasegawa, M. ; Hasegawa, T. ; Eguchi, Y. ; Yamada, A. ; Suematsu, E. ; Sakuno, K. ; Sato, H. ; Hashizume, N.</creator><creatorcontrib>Yu Zhu ; Twynam, J.K. ; Yagura, M. ; Hasegawa, M. ; Hasegawa, T. ; Eguchi, Y. ; Yamada, A. ; Suematsu, E. ; Sakuno, K. ; Sato, H. ; Hashizume, N.</creatorcontrib><description>Transients of self-heating semiconductor devices are theoretically investigated based on a feedback circuit model, which is composed of three sub-circuits describing the isothermal electrical characteristics, thermal impedance, and temperature dependence of the electrical characteristics of the devices, respectively. Analytical expressions of the frequency and transient responses have been derived for both the electrical and thermal characteristics of self-heating devices, yielding accurate methods to extract the thermal time constant in both the time and frequency domains. The model is verified by the transient electrical-response measurement of a GaInP/GaAs heterojunction bipolar transistor.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/22.739207</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>IEEE</publisher><subject>Analytical models ; Electric variables ; Feedback circuits ; Frequency domain analysis ; Gain measurement ; Impedance ; Isothermal processes ; Semiconductor devices ; Temperature dependence ; Transient analysis</subject><ispartof>IEEE transactions on microwave theory and techniques, 1998-12, Vol.46 (12), p.2258-2263</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-9fdc2cb1c9a25a1d182b93ecf8a28a7c117713aae9bda2cf56f465ec1fbe8c633</citedby><cites>FETCH-LOGICAL-c368t-9fdc2cb1c9a25a1d182b93ecf8a28a7c117713aae9bda2cf56f465ec1fbe8c633</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/739207$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/739207$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yu Zhu</creatorcontrib><creatorcontrib>Twynam, J.K.</creatorcontrib><creatorcontrib>Yagura, M.</creatorcontrib><creatorcontrib>Hasegawa, M.</creatorcontrib><creatorcontrib>Hasegawa, T.</creatorcontrib><creatorcontrib>Eguchi, Y.</creatorcontrib><creatorcontrib>Yamada, A.</creatorcontrib><creatorcontrib>Suematsu, E.</creatorcontrib><creatorcontrib>Sakuno, K.</creatorcontrib><creatorcontrib>Sato, H.</creatorcontrib><creatorcontrib>Hashizume, N.</creatorcontrib><title>Analytical model for electrical and thermal transients of self-heating semiconductor devices</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>Transients of self-heating semiconductor devices are theoretically investigated based on a feedback circuit model, which is composed of three sub-circuits describing the isothermal electrical characteristics, thermal impedance, and temperature dependence of the electrical characteristics of the devices, respectively. Analytical expressions of the frequency and transient responses have been derived for both the electrical and thermal characteristics of self-heating devices, yielding accurate methods to extract the thermal time constant in both the time and frequency domains. The model is verified by the transient electrical-response measurement of a GaInP/GaAs heterojunction bipolar transistor.</description><subject>Analytical models</subject><subject>Electric variables</subject><subject>Feedback circuits</subject><subject>Frequency domain analysis</subject><subject>Gain measurement</subject><subject>Impedance</subject><subject>Isothermal processes</subject><subject>Semiconductor devices</subject><subject>Temperature dependence</subject><subject>Transient analysis</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0TtPwzAQAGALgUR5DKxMmZAYUmwnfo1VxUuqxAIbUuRcztQoj2K7SP33BFKxwnSv7245Qi4YnTNGzQ3nc1UYTtUBmTEhVG6koodkRinTuSk1PSYnMb6PZSmonpHXRW_bXfJg26wbGmwzN4QMW4QUfpq2b7K0xtCNeQq2jx77FLPBZRFbl6_RJt-_jUXnYeibLaRxv8FPDxjPyJGzbcTzfTwlL3e3z8uHfPV0_7hcrHIopE65cQ1wqBkYy4VlDdO8NgWC05Zrq4AxpVhhLZq6sRyckK6UAoG5GjXIojglV9PdTRg-thhT1fkI2La2x2EbK66NEkrQf8CyZNqUf0MpJZWFGOH1BCEMMQZ01Sb4zoZdxWj1_ZGK82r6yGgvJ-sR8dfth196a4fs</recordid><startdate>19981201</startdate><enddate>19981201</enddate><creator>Yu Zhu</creator><creator>Twynam, J.K.</creator><creator>Yagura, M.</creator><creator>Hasegawa, M.</creator><creator>Hasegawa, T.</creator><creator>Eguchi, Y.</creator><creator>Yamada, A.</creator><creator>Suematsu, E.</creator><creator>Sakuno, K.</creator><creator>Sato, H.</creator><creator>Hashizume, N.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7U5</scope></search><sort><creationdate>19981201</creationdate><title>Analytical model for electrical and thermal transients of self-heating semiconductor devices</title><author>Yu Zhu ; Twynam, J.K. ; Yagura, M. ; Hasegawa, M. ; Hasegawa, T. ; Eguchi, Y. ; Yamada, A. ; Suematsu, E. ; Sakuno, K. ; Sato, H. ; Hashizume, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-9fdc2cb1c9a25a1d182b93ecf8a28a7c117713aae9bda2cf56f465ec1fbe8c633</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Analytical models</topic><topic>Electric variables</topic><topic>Feedback circuits</topic><topic>Frequency domain analysis</topic><topic>Gain measurement</topic><topic>Impedance</topic><topic>Isothermal processes</topic><topic>Semiconductor devices</topic><topic>Temperature dependence</topic><topic>Transient analysis</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yu Zhu</creatorcontrib><creatorcontrib>Twynam, J.K.</creatorcontrib><creatorcontrib>Yagura, M.</creatorcontrib><creatorcontrib>Hasegawa, M.</creatorcontrib><creatorcontrib>Hasegawa, T.</creatorcontrib><creatorcontrib>Eguchi, Y.</creatorcontrib><creatorcontrib>Yamada, A.</creatorcontrib><creatorcontrib>Suematsu, E.</creatorcontrib><creatorcontrib>Sakuno, K.</creatorcontrib><creatorcontrib>Sato, H.</creatorcontrib><creatorcontrib>Hashizume, N.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yu Zhu</au><au>Twynam, J.K.</au><au>Yagura, M.</au><au>Hasegawa, M.</au><au>Hasegawa, T.</au><au>Eguchi, Y.</au><au>Yamada, A.</au><au>Suematsu, E.</au><au>Sakuno, K.</au><au>Sato, H.</au><au>Hashizume, N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analytical model for electrical and thermal transients of self-heating semiconductor devices</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>1998-12-01</date><risdate>1998</risdate><volume>46</volume><issue>12</issue><spage>2258</spage><epage>2263</epage><pages>2258-2263</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>Transients of self-heating semiconductor devices are theoretically investigated based on a feedback circuit model, which is composed of three sub-circuits describing the isothermal electrical characteristics, thermal impedance, and temperature dependence of the electrical characteristics of the devices, respectively. Analytical expressions of the frequency and transient responses have been derived for both the electrical and thermal characteristics of self-heating devices, yielding accurate methods to extract the thermal time constant in both the time and frequency domains. The model is verified by the transient electrical-response measurement of a GaInP/GaAs heterojunction bipolar transistor.</abstract><pub>IEEE</pub><doi>10.1109/22.739207</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9480 |
| ispartof | IEEE transactions on microwave theory and techniques, 1998-12, Vol.46 (12), p.2258-2263 |
| issn | 0018-9480 1557-9670 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_26660635 |
| source | IEEE Electronic Library (IEL) |
| subjects | Analytical models Electric variables Feedback circuits Frequency domain analysis Gain measurement Impedance Isothermal processes Semiconductor devices Temperature dependence Transient analysis |
| title | Analytical model for electrical and thermal transients of self-heating semiconductor devices |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T21%3A19%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Analytical%20model%20for%20electrical%20and%20thermal%20transients%20of%20self-heating%20semiconductor%20devices&rft.jtitle=IEEE%20transactions%20on%20microwave%20theory%20and%20techniques&rft.au=Yu%20Zhu&rft.date=1998-12-01&rft.volume=46&rft.issue=12&rft.spage=2258&rft.epage=2263&rft.pages=2258-2263&rft.issn=0018-9480&rft.eissn=1557-9670&rft.coden=IETMAB&rft_id=info:doi/10.1109/22.739207&rft_dat=%3Cproquest_RIE%3E28441894%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=26660635&rft_id=info:pmid/&rft_ieee_id=739207&rfr_iscdi=true |