Incorporation of ZrO2 into MoSi2 Porous Bodies by Chemical Vapour Infiltration
Incorporation of ZrO2 has been shown to strengthen MoSi2 at room temperature. ZrO2 was incorporated into MoSi2 partially sintered bodies by means of CVI. An organometallic precursor was used to fill the fine pore network. Infiltration kinetics were studied by observing the infiltrated microstructure...
Gespeichert in:
Veröffentlicht in: | Key engineering materials 1999-01, Vol.161-163, p.275-278 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 278 |
---|---|
container_issue | |
container_start_page | 275 |
container_title | Key engineering materials |
container_volume | 161-163 |
creator | Kikuchi, A. Taniguchi, Satiyo Yoshikawa, Nobuhiro |
description | Incorporation of ZrO2 has been shown to strengthen MoSi2 at room temperature. ZrO2 was incorporated into MoSi2 partially sintered bodies by means of CVI. An organometallic precursor was used to fill the fine pore network. Infiltration kinetics were studied by observing the infiltrated microstructures under different conditions, and the infiltrated distance was estimated using a one-dimensional analytical model, and it was possible to explain the experimental result at 2.6 kPa. Infiltration temperature of 673K resulted in low crystallinity of the deposited ZrO2, and post annealing treatment was conducted. Microstructural changes were observed by TEM. Optimum conditions for fabricating MoSi2/ZrO2 by CVI are discussed, taking account of the obtained results. 4 refs. |
doi_str_mv | 10.4028/www.scientific.net/KEM.161-163.275 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_26658836</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>26658836</sourcerecordid><originalsourceid>FETCH-LOGICAL-c301t-937ac4f06d77fc2a3753f3b0048aa6d516e9c36abe8a7f189192faaf7d63b2103</originalsourceid><addsrcrecordid>eNqVkE1LAzEURQdRsFb_Q1YuhJnmo5PJLG2tWmyt4MfCTchkEpoyTcYkpfTfG6ng2sXjvcXl8O7JshsEizHEbLTf74sgjbLRaCMLq-LoabYsEEU5oqTAVXmSDRClOK-rujxNN0Qkrxmm59lFCBsICWKoHGTPcyud750X0TgLnAaffoWBsdGBpXs1GLw473YBTFxrVADNAUzXamuk6MCH6N3Og7nVpotHwGV2pkUX1NXvHmbv97O36WO-WD3Mp7eLXBKIYl6TSsixhrStKi2xIFVJNGkgHDMhaFsiqmpJqGgUE5VGrEY11kLoqqWkwQiSYXZ95Pbefe1UiHxrglRdJ6xK33JMackYoSk4OQaldyF4pXnvzVb4A0eQ_6jkSSX_U8mTSp5U8qQyDeFJZYLcHSGppQ1RyTXfpOY2NfwP5hsvPodO</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26658836</pqid></control><display><type>article</type><title>Incorporation of ZrO2 into MoSi2 Porous Bodies by Chemical Vapour Infiltration</title><source>Scientific.net Journals</source><creator>Kikuchi, A. ; Taniguchi, Satiyo ; Yoshikawa, Nobuhiro</creator><contributor>WCA</contributor><creatorcontrib>Kikuchi, A. ; Taniguchi, Satiyo ; Yoshikawa, Nobuhiro ; WCA</creatorcontrib><description>Incorporation of ZrO2 has been shown to strengthen MoSi2 at room temperature. ZrO2 was incorporated into MoSi2 partially sintered bodies by means of CVI. An organometallic precursor was used to fill the fine pore network. Infiltration kinetics were studied by observing the infiltrated microstructures under different conditions, and the infiltrated distance was estimated using a one-dimensional analytical model, and it was possible to explain the experimental result at 2.6 kPa. Infiltration temperature of 673K resulted in low crystallinity of the deposited ZrO2, and post annealing treatment was conducted. Microstructural changes were observed by TEM. Optimum conditions for fabricating MoSi2/ZrO2 by CVI are discussed, taking account of the obtained results. 4 refs.</description><identifier>ISSN: 1013-9826</identifier><identifier>ISSN: 1662-9795</identifier><identifier>EISSN: 1662-9795</identifier><identifier>DOI: 10.4028/www.scientific.net/KEM.161-163.275</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><ispartof>Key engineering materials, 1999-01, Vol.161-163, p.275-278</ispartof><rights>1999 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c301t-937ac4f06d77fc2a3753f3b0048aa6d516e9c36abe8a7f189192faaf7d63b2103</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/372?width=600</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><contributor>WCA</contributor><creatorcontrib>Kikuchi, A.</creatorcontrib><creatorcontrib>Taniguchi, Satiyo</creatorcontrib><creatorcontrib>Yoshikawa, Nobuhiro</creatorcontrib><title>Incorporation of ZrO2 into MoSi2 Porous Bodies by Chemical Vapour Infiltration</title><title>Key engineering materials</title><description>Incorporation of ZrO2 has been shown to strengthen MoSi2 at room temperature. ZrO2 was incorporated into MoSi2 partially sintered bodies by means of CVI. An organometallic precursor was used to fill the fine pore network. Infiltration kinetics were studied by observing the infiltrated microstructures under different conditions, and the infiltrated distance was estimated using a one-dimensional analytical model, and it was possible to explain the experimental result at 2.6 kPa. Infiltration temperature of 673K resulted in low crystallinity of the deposited ZrO2, and post annealing treatment was conducted. Microstructural changes were observed by TEM. Optimum conditions for fabricating MoSi2/ZrO2 by CVI are discussed, taking account of the obtained results. 4 refs.</description><issn>1013-9826</issn><issn>1662-9795</issn><issn>1662-9795</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNqVkE1LAzEURQdRsFb_Q1YuhJnmo5PJLG2tWmyt4MfCTchkEpoyTcYkpfTfG6ng2sXjvcXl8O7JshsEizHEbLTf74sgjbLRaCMLq-LoabYsEEU5oqTAVXmSDRClOK-rujxNN0Qkrxmm59lFCBsICWKoHGTPcyud750X0TgLnAaffoWBsdGBpXs1GLw473YBTFxrVADNAUzXamuk6MCH6N3Og7nVpotHwGV2pkUX1NXvHmbv97O36WO-WD3Mp7eLXBKIYl6TSsixhrStKi2xIFVJNGkgHDMhaFsiqmpJqGgUE5VGrEY11kLoqqWkwQiSYXZ95Pbefe1UiHxrglRdJ6xK33JMackYoSk4OQaldyF4pXnvzVb4A0eQ_6jkSSX_U8mTSp5U8qQyDeFJZYLcHSGppQ1RyTXfpOY2NfwP5hsvPodO</recordid><startdate>19990101</startdate><enddate>19990101</enddate><creator>Kikuchi, A.</creator><creator>Taniguchi, Satiyo</creator><creator>Yoshikawa, Nobuhiro</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19990101</creationdate><title>Incorporation of ZrO2 into MoSi2 Porous Bodies by Chemical Vapour Infiltration</title><author>Kikuchi, A. ; Taniguchi, Satiyo ; Yoshikawa, Nobuhiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c301t-937ac4f06d77fc2a3753f3b0048aa6d516e9c36abe8a7f189192faaf7d63b2103</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kikuchi, A.</creatorcontrib><creatorcontrib>Taniguchi, Satiyo</creatorcontrib><creatorcontrib>Yoshikawa, Nobuhiro</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Key engineering materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kikuchi, A.</au><au>Taniguchi, Satiyo</au><au>Yoshikawa, Nobuhiro</au><au>WCA</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Incorporation of ZrO2 into MoSi2 Porous Bodies by Chemical Vapour Infiltration</atitle><jtitle>Key engineering materials</jtitle><date>1999-01-01</date><risdate>1999</risdate><volume>161-163</volume><spage>275</spage><epage>278</epage><pages>275-278</pages><issn>1013-9826</issn><issn>1662-9795</issn><eissn>1662-9795</eissn><abstract>Incorporation of ZrO2 has been shown to strengthen MoSi2 at room temperature. ZrO2 was incorporated into MoSi2 partially sintered bodies by means of CVI. An organometallic precursor was used to fill the fine pore network. Infiltration kinetics were studied by observing the infiltrated microstructures under different conditions, and the infiltrated distance was estimated using a one-dimensional analytical model, and it was possible to explain the experimental result at 2.6 kPa. Infiltration temperature of 673K resulted in low crystallinity of the deposited ZrO2, and post annealing treatment was conducted. Microstructural changes were observed by TEM. Optimum conditions for fabricating MoSi2/ZrO2 by CVI are discussed, taking account of the obtained results. 4 refs.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/KEM.161-163.275</doi><tpages>4</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 1013-9826 |
ispartof | Key engineering materials, 1999-01, Vol.161-163, p.275-278 |
issn | 1013-9826 1662-9795 1662-9795 |
language | eng |
recordid | cdi_proquest_miscellaneous_26658836 |
source | Scientific.net Journals |
title | Incorporation of ZrO2 into MoSi2 Porous Bodies by Chemical Vapour Infiltration |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T21%3A07%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Incorporation%20of%20ZrO2%20into%20MoSi2%20Porous%20Bodies%20by%20Chemical%20Vapour%20Infiltration&rft.jtitle=Key%20engineering%20materials&rft.au=Kikuchi,%20A.&rft.date=1999-01-01&rft.volume=161-163&rft.spage=275&rft.epage=278&rft.pages=275-278&rft.issn=1013-9826&rft.eissn=1662-9795&rft_id=info:doi/10.4028/www.scientific.net/KEM.161-163.275&rft_dat=%3Cproquest_cross%3E26658836%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=26658836&rft_id=info:pmid/&rfr_iscdi=true |