Characterization of sputtered Ta-C-N film in the Cu/barrier/Si contact system

Characterization of sputtered tantalum carbon nitride (Ta-C-N) film in Cu/barrier/Si system was reported for the first time. With a 50∶50 wt.% TaC target and an optimum N2/Ar flow rate (in sccm) ratio of 2/24, a 600 Å-thick sputtered Ta-C-N layer was shown metallurgically stable up to 650°C annealing for 30 min, which is about 100°C higher as compared to the case without nitrogen doping. Cu diffusion through the local defects or grain boundaries of the Ta-C-N barrier layer into Si substrate is the dominant factor responsible for the failure of the Ta-C-N barrier layer after high temperature annealing.