Bolometric characteristics of macroporous silicon structures
Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type dn/n-Si and dn /macroporous n-Si were formed by thermal evaporation of indium in a hydrogen atmosphere. Temperature dependencies of electron conductivity, concentration and mobility in macroporous silic...
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| Veröffentlicht in: | Semiconductor physics, quantum electronics, and optoelectronics quantum electronics, and optoelectronics, 2001-07, Vol.4 (3), p.177-181 |
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| container_title | Semiconductor physics, quantum electronics, and optoelectronics |
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| creator | Karachevtseva, L.A. |
| description | Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type dn/n-Si and dn /macroporous n-Si were formed by thermal evaporation of indium in a hydrogen atmosphere. Temperature dependencies of electron conductivity, concentration and mobility in macroporous silicon emulate the temperature curves of the corresponding parameters for crystalline silicon. The investigated macroporous silicon structures are promising material for multi-element thermal sensor fabrication due to their high temperature coefficient of electrical resistance, low noise level and good radiation absorption in the operation spectral region. (Author) |
| doi_str_mv | 10.15407/spqeo4.03.177 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_26636484</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>26636484</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1107-6de3fa46fb237d94ba6907edebae1fcbefad6be2ee28c19754949371640dbd753</originalsourceid><addsrcrecordid>eNotkDtLxEAUhQdRcF1trVPZJd7JvBKwUfEFCzZaD5PJHRxJdrJzk8J_b3CtzikOh4-PsWsOFVcSzC1NB0yyAlFxY07YhmtQpVZNfbp2paFsQMhzdkH0DSBUrWHD7h7SkEacc_SF_3LZ-RlzpDl6KlIoRudzmlJOCxUUh-jTvqA5L35eMtIlOwtuILz6zy37fH76eHwtd-8vb4_3u9JzDqbUPYrgpA5dLUzfys7pFgz22DnkwXcYXK87rBHrxvPWKNnKVhiuJfRdb5TYspvj75TTYUGa7RjJ4zC4Pa5kttZaaNnIdVgdhys1UcZgpxxHl38sB_snyR4lWRB2lSR-AZfuXWw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26636484</pqid></control><display><type>article</type><title>Bolometric characteristics of macroporous silicon structures</title><source>DOAJ Directory of Open Access Journals</source><creator>Karachevtseva, L.A.</creator><creatorcontrib>Karachevtseva, L.A. ; Institute of Semiconductor Physics, 45 Nauki Prsp., 03028 Kyiv, Ukraine</creatorcontrib><description>Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type dn/n-Si and dn /macroporous n-Si were formed by thermal evaporation of indium in a hydrogen atmosphere. Temperature dependencies of electron conductivity, concentration and mobility in macroporous silicon emulate the temperature curves of the corresponding parameters for crystalline silicon. The investigated macroporous silicon structures are promising material for multi-element thermal sensor fabrication due to their high temperature coefficient of electrical resistance, low noise level and good radiation absorption in the operation spectral region. (Author)</description><identifier>ISSN: 1560-8034</identifier><identifier>EISSN: 1605-6582</identifier><identifier>DOI: 10.15407/spqeo4.03.177</identifier><language>eng</language><ispartof>Semiconductor physics, quantum electronics, and optoelectronics, 2001-07, Vol.4 (3), p.177-181</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c1107-6de3fa46fb237d94ba6907edebae1fcbefad6be2ee28c19754949371640dbd753</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,864,27924,27925</link.rule.ids></links><search><creatorcontrib>Karachevtseva, L.A.</creatorcontrib><creatorcontrib>Institute of Semiconductor Physics, 45 Nauki Prsp., 03028 Kyiv, Ukraine</creatorcontrib><title>Bolometric characteristics of macroporous silicon structures</title><title>Semiconductor physics, quantum electronics, and optoelectronics</title><description>Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type dn/n-Si and dn /macroporous n-Si were formed by thermal evaporation of indium in a hydrogen atmosphere. Temperature dependencies of electron conductivity, concentration and mobility in macroporous silicon emulate the temperature curves of the corresponding parameters for crystalline silicon. The investigated macroporous silicon structures are promising material for multi-element thermal sensor fabrication due to their high temperature coefficient of electrical resistance, low noise level and good radiation absorption in the operation spectral region. (Author)</description><issn>1560-8034</issn><issn>1605-6582</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNotkDtLxEAUhQdRcF1trVPZJd7JvBKwUfEFCzZaD5PJHRxJdrJzk8J_b3CtzikOh4-PsWsOFVcSzC1NB0yyAlFxY07YhmtQpVZNfbp2paFsQMhzdkH0DSBUrWHD7h7SkEacc_SF_3LZ-RlzpDl6KlIoRudzmlJOCxUUh-jTvqA5L35eMtIlOwtuILz6zy37fH76eHwtd-8vb4_3u9JzDqbUPYrgpA5dLUzfys7pFgz22DnkwXcYXK87rBHrxvPWKNnKVhiuJfRdb5TYspvj75TTYUGa7RjJ4zC4Pa5kttZaaNnIdVgdhys1UcZgpxxHl38sB_snyR4lWRB2lSR-AZfuXWw</recordid><startdate>20010713</startdate><enddate>20010713</enddate><creator>Karachevtseva, L.A.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20010713</creationdate><title>Bolometric characteristics of macroporous silicon structures</title><author>Karachevtseva, L.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1107-6de3fa46fb237d94ba6907edebae1fcbefad6be2ee28c19754949371640dbd753</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Karachevtseva, L.A.</creatorcontrib><creatorcontrib>Institute of Semiconductor Physics, 45 Nauki Prsp., 03028 Kyiv, Ukraine</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Semiconductor physics, quantum electronics, and optoelectronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Karachevtseva, L.A.</au><aucorp>Institute of Semiconductor Physics, 45 Nauki Prsp., 03028 Kyiv, Ukraine</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Bolometric characteristics of macroporous silicon structures</atitle><jtitle>Semiconductor physics, quantum electronics, and optoelectronics</jtitle><date>2001-07-13</date><risdate>2001</risdate><volume>4</volume><issue>3</issue><spage>177</spage><epage>181</epage><pages>177-181</pages><issn>1560-8034</issn><eissn>1605-6582</eissn><abstract>Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type dn/n-Si and dn /macroporous n-Si were formed by thermal evaporation of indium in a hydrogen atmosphere. Temperature dependencies of electron conductivity, concentration and mobility in macroporous silicon emulate the temperature curves of the corresponding parameters for crystalline silicon. The investigated macroporous silicon structures are promising material for multi-element thermal sensor fabrication due to their high temperature coefficient of electrical resistance, low noise level and good radiation absorption in the operation spectral region. (Author)</abstract><doi>10.15407/spqeo4.03.177</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 1560-8034 |
| ispartof | Semiconductor physics, quantum electronics, and optoelectronics, 2001-07, Vol.4 (3), p.177-181 |
| issn | 1560-8034 1605-6582 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_26636484 |
| source | DOAJ Directory of Open Access Journals |
| title | Bolometric characteristics of macroporous silicon structures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T12%3A55%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Bolometric%20characteristics%20of%20macroporous%20silicon%20structures&rft.jtitle=Semiconductor%20physics,%20quantum%20electronics,%20and%20optoelectronics&rft.au=Karachevtseva,%20L.A.&rft.aucorp=Institute%20of%20Semiconductor%20Physics,%2045%20Nauki%20Prsp.,%2003028%20Kyiv,%20Ukraine&rft.date=2001-07-13&rft.volume=4&rft.issue=3&rft.spage=177&rft.epage=181&rft.pages=177-181&rft.issn=1560-8034&rft.eissn=1605-6582&rft_id=info:doi/10.15407/spqeo4.03.177&rft_dat=%3Cproquest_cross%3E26636484%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=26636484&rft_id=info:pmid/&rfr_iscdi=true |