Microstructural modification of TiN deposited by magnetron ion plating: Influence of magnetic field configuration
Three operating modes of a single magnetron were used during deposition processes: balanced magnetron configuration with no external magnetic field and no bias potential applied (magnetron only), balanced magnetron configuration with permanent magnet cages positioned around the deposition volume to...
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Veröffentlicht in: | Thin solid films 1998-04, Vol.317 (1), p.463-467 |
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container_title | Thin solid films |
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creator | ZLATANOVIC, M POPOVIC, N BOGDANOV, Z BELOSEVAC, R KUNOSIC, A GONCIC, B |
description | Three operating modes of a single magnetron were used during deposition processes: balanced magnetron configuration with no external magnetic field and no bias potential applied (magnetron only), balanced magnetron configuration with permanent magnet cages positioned around the deposition volume to form a closed field configuration (BM mode) and an unbalanced magnetron closed field configuration (UBM mode). The influence of the deposition rate and ion
j
i to deposited metal atom
j
m flux ratio
j
i/
j
m at the substrate surface on the texture evolution was discussed. The deposition rate distribution over the target to substrate distance was found to depend on magnetic field configuration and also to be different in metallic and reactive mode. In UBM mode it was possible to obtain nearly constant bias current density along the deposition volume at the constant bias potential. The preferred crystalline orientation was changed from (200) to (111) by increasing target to substrate distance in both BM and UBM modes, while the film deposited in magnetron-only configuration preserved (111) texture. |
doi_str_mv | 10.1016/S0040-6090(97)00557-9 |
format | Article |
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j
i to deposited metal atom
j
m flux ratio
j
i/
j
m at the substrate surface on the texture evolution was discussed. The deposition rate distribution over the target to substrate distance was found to depend on magnetic field configuration and also to be different in metallic and reactive mode. In UBM mode it was possible to obtain nearly constant bias current density along the deposition volume at the constant bias potential. The preferred crystalline orientation was changed from (200) to (111) by increasing target to substrate distance in both BM and UBM modes, while the film deposited in magnetron-only configuration preserved (111) texture.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(97)00557-9</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Ion and electron beam-assisted deposition; ion plating ; Magnetron ion plating ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Sputtering ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; TiN</subject><ispartof>Thin solid films, 1998-04, Vol.317 (1), p.463-467</ispartof><rights>1998 Elsevier Science S.A.</rights><rights>1998 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-b69e52ef5d945ba24aa1afbc2437c6fab28b95ac44ea6e7b00e96035546e68c73</citedby><cites>FETCH-LOGICAL-c367t-b69e52ef5d945ba24aa1afbc2437c6fab28b95ac44ea6e7b00e96035546e68c73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0040609097005579$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3536,23910,23911,25119,27903,27904,65309</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2394610$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>ZLATANOVIC, M</creatorcontrib><creatorcontrib>POPOVIC, N</creatorcontrib><creatorcontrib>BOGDANOV, Z</creatorcontrib><creatorcontrib>BELOSEVAC, R</creatorcontrib><creatorcontrib>KUNOSIC, A</creatorcontrib><creatorcontrib>GONCIC, B</creatorcontrib><title>Microstructural modification of TiN deposited by magnetron ion plating: Influence of magnetic field configuration</title><title>Thin solid films</title><description>Three operating modes of a single magnetron were used during deposition processes: balanced magnetron configuration with no external magnetic field and no bias potential applied (magnetron only), balanced magnetron configuration with permanent magnet cages positioned around the deposition volume to form a closed field configuration (BM mode) and an unbalanced magnetron closed field configuration (UBM mode). The influence of the deposition rate and ion
j
i to deposited metal atom
j
m flux ratio
j
i/
j
m at the substrate surface on the texture evolution was discussed. The deposition rate distribution over the target to substrate distance was found to depend on magnetic field configuration and also to be different in metallic and reactive mode. In UBM mode it was possible to obtain nearly constant bias current density along the deposition volume at the constant bias potential. The preferred crystalline orientation was changed from (200) to (111) by increasing target to substrate distance in both BM and UBM modes, while the film deposited in magnetron-only configuration preserved (111) texture.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Ion and electron beam-assisted deposition; ion plating</subject><subject>Magnetron ion plating</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Sputtering</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><subject>TiN</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNqFkMFq3DAQhkVooZu0j1DQIYT04HYkW5KVSwhLmyxsm0PSs5Dl0aLgtTaSHcjb195d9trTHOb7_2E-Qr4y-M6AyR9PABUUEjRca_UNQAhV6DOyYLXSBVcl-0AWJ-QTOc_5BQAY5-WCvP4OLsU8pNENY7Id3cY2-ODsEGJPo6fP4Q9tcRdzGLClzTvd2k2PQ5q2M7HrJrLf3NBV77sRe4dz6MAER33ArqUu9j5spvq59DP56G2X8ctxXpC_v34-Lx-K9eP9anm3Llwp1VA0UqPg6EWrK9FYXlnLrG8cr0rlpLcNrxstrKsqtBJVA4BaQilEJVHWTpUX5OrQu0vxdcQ8mG3IDrvO9hjHbLiUXNU1n0BxAGcROaE3uxS2Nr0bBmYWbPaCzWzPaGX2go2ecpfHAzY72_lkexfyKcxLXUkGE3Z7wHB69i1gMtmFWVQbErrBtDH859A_YSSR5A</recordid><startdate>19980401</startdate><enddate>19980401</enddate><creator>ZLATANOVIC, M</creator><creator>POPOVIC, N</creator><creator>BOGDANOV, Z</creator><creator>BELOSEVAC, R</creator><creator>KUNOSIC, A</creator><creator>GONCIC, B</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19980401</creationdate><title>Microstructural modification of TiN deposited by magnetron ion plating: Influence of magnetic field configuration</title><author>ZLATANOVIC, M ; POPOVIC, N ; BOGDANOV, Z ; BELOSEVAC, R ; KUNOSIC, A ; GONCIC, B</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-b69e52ef5d945ba24aa1afbc2437c6fab28b95ac44ea6e7b00e96035546e68c73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Ion and electron beam-assisted deposition; ion plating</topic><topic>Magnetron ion plating</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Sputtering</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><topic>TiN</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>ZLATANOVIC, M</creatorcontrib><creatorcontrib>POPOVIC, N</creatorcontrib><creatorcontrib>BOGDANOV, Z</creatorcontrib><creatorcontrib>BELOSEVAC, R</creatorcontrib><creatorcontrib>KUNOSIC, A</creatorcontrib><creatorcontrib>GONCIC, B</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>ZLATANOVIC, M</au><au>POPOVIC, N</au><au>BOGDANOV, Z</au><au>BELOSEVAC, R</au><au>KUNOSIC, A</au><au>GONCIC, B</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Microstructural modification of TiN deposited by magnetron ion plating: Influence of magnetic field configuration</atitle><jtitle>Thin solid films</jtitle><date>1998-04-01</date><risdate>1998</risdate><volume>317</volume><issue>1</issue><spage>463</spage><epage>467</epage><pages>463-467</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Three operating modes of a single magnetron were used during deposition processes: balanced magnetron configuration with no external magnetic field and no bias potential applied (magnetron only), balanced magnetron configuration with permanent magnet cages positioned around the deposition volume to form a closed field configuration (BM mode) and an unbalanced magnetron closed field configuration (UBM mode). The influence of the deposition rate and ion
j
i to deposited metal atom
j
m flux ratio
j
i/
j
m at the substrate surface on the texture evolution was discussed. The deposition rate distribution over the target to substrate distance was found to depend on magnetic field configuration and also to be different in metallic and reactive mode. In UBM mode it was possible to obtain nearly constant bias current density along the deposition volume at the constant bias potential. The preferred crystalline orientation was changed from (200) to (111) by increasing target to substrate distance in both BM and UBM modes, while the film deposited in magnetron-only configuration preserved (111) texture.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/S0040-6090(97)00557-9</doi><tpages>5</tpages></addata></record> |
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subjects | Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Ion and electron beam-assisted deposition ion plating Magnetron ion plating Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Sputtering Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology TiN |
title | Microstructural modification of TiN deposited by magnetron ion plating: Influence of magnetic field configuration |
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