Evaluation of precursors for chemical vapor deposition of ruthenium

Several commercially available organometallic precursors have been evaluated for metallorganic chemical vapor deposition (MOCVD) of pure ruthenium films. Of these, only a dimer, [RuC 5H 5(CO) 2] 2, proved suitable for CVD. On patterned Si 3N 4 and flat barium strontium titanate (BST), pure, conducti...

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Veröffentlicht in:	Thin solid films 2000-11, Vol.376 (1), p.73-81
Hauptverfasser:	Smith, K.C, Sun, Y.-M, Mettlach, N.R, Hance, R.L, White, J.M
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Insulating substrates Materials science Metal-organic chemical vapor deposition Metals. Metallurgy Methods of deposition of films and coatings film growth and epitaxy Physics Ruthenium Thin film X-Ray photoelectron spectroscopy
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