2,2'-Bithiophene-4,4'-dicarboxamide: a novel building block for semiconducting polymers
A novel electron deficient building block [2,2'-bithiophene]-4,4'-dicarboxamide (BTDCA) was designed to lower the highest occupied molecular orbital (HOMO) energy level of polythiophenes in order to achieve a higher open circuit voltage (V oc) and thus a higher power conversion efficiency...
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description | A novel electron deficient building block [2,2'-bithiophene]-4,4'-dicarboxamide (BTDCA) was designed to lower the highest occupied molecular orbital (HOMO) energy level of polythiophenes in order to achieve a higher open circuit voltage (V oc) and thus a higher power conversion efficiency in polymer solar cells (PSCs). BTDCA dibromo monomers were conveniently synthesized in four steps, and were used to prepare three thiophene-based D-A polymers, P(BTDCA66-BT) (66BT), P(BTDCA44-BT) (44BT) and P(BTDCA44-TT) (44TT). All the polymers exhibited unipolar hole transport properties, exhibiting mobilities in the range of ∼10-4 to 10-2 cm2 V-1 s-1 with the highest hole mobility of up to 1.43 × 10-2 cm2 V-1 s-1 achieved for 44BT in bottom-gate bottom-contact organic thin film transistors (OTFTs). In PSCs, these polymers achieved high V oc's of 0.81-0.87 V when PCBM or ITIC was used as acceptor. When 44TT was used as donor and ITIC was used as acceptor, a power conversion efficiency (PCE) of up to 4.5% was obtained, a significant improvement when compared with the poly(3-hexylthiophene) (P3HT):ITIC devices, which showed the highest PCE of merely 0.92%.A novel electron deficient building block [2,2'-bithiophene]-4,4'-dicarboxamide (BTDCA) was designed to lower the highest occupied molecular orbital (HOMO) energy level of polythiophenes in order to achieve a higher open circuit voltage (V oc) and thus a higher power conversion efficiency in polymer solar cells (PSCs). BTDCA dibromo monomers were conveniently synthesized in four steps, and were used to prepare three thiophene-based D-A polymers, P(BTDCA66-BT) (66BT), P(BTDCA44-BT) (44BT) and P(BTDCA44-TT) (44TT). All the polymers exhibited unipolar hole transport properties, exhibiting mobilities in the range of ∼10-4 to 10-2 cm2 V-1 s-1 with the highest hole mobility of up to 1.43 × 10-2 cm2 V-1 s-1 achieved for 44BT in bottom-gate bottom-contact organic thin film transistors (OTFTs). In PSCs, these polymers achieved high V oc's of 0.81-0.87 V when PCBM or ITIC was used as acceptor. When 44TT was used as donor and ITIC was used as acceptor, a power conversion efficiency (PCE) of up to 4.5% was obtained, a significant improvement when compared with the poly(3-hexylthiophene) (P3HT):ITIC devices, which showed the highest PCE of merely 0.92%. |
doi_str_mv | 10.1039/c9ra06909g |
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BTDCA dibromo monomers were conveniently synthesized in four steps, and were used to prepare three thiophene-based D-A polymers, P(BTDCA66-BT) (66BT), P(BTDCA44-BT) (44BT) and P(BTDCA44-TT) (44TT). All the polymers exhibited unipolar hole transport properties, exhibiting mobilities in the range of ∼10-4 to 10-2 cm2 V-1 s-1 with the highest hole mobility of up to 1.43 × 10-2 cm2 V-1 s-1 achieved for 44BT in bottom-gate bottom-contact organic thin film transistors (OTFTs). In PSCs, these polymers achieved high V oc's of 0.81-0.87 V when PCBM or ITIC was used as acceptor. When 44TT was used as donor and ITIC was used as acceptor, a power conversion efficiency (PCE) of up to 4.5% was obtained, a significant improvement when compared with the poly(3-hexylthiophene) (P3HT):ITIC devices, which showed the highest PCE of merely 0.92%.A novel electron deficient building block [2,2'-bithiophene]-4,4'-dicarboxamide (BTDCA) was designed to lower the highest occupied molecular orbital (HOMO) energy level of polythiophenes in order to achieve a higher open circuit voltage (V oc) and thus a higher power conversion efficiency in polymer solar cells (PSCs). BTDCA dibromo monomers were conveniently synthesized in four steps, and were used to prepare three thiophene-based D-A polymers, P(BTDCA66-BT) (66BT), P(BTDCA44-BT) (44BT) and P(BTDCA44-TT) (44TT). All the polymers exhibited unipolar hole transport properties, exhibiting mobilities in the range of ∼10-4 to 10-2 cm2 V-1 s-1 with the highest hole mobility of up to 1.43 × 10-2 cm2 V-1 s-1 achieved for 44BT in bottom-gate bottom-contact organic thin film transistors (OTFTs). In PSCs, these polymers achieved high V oc's of 0.81-0.87 V when PCBM or ITIC was used as acceptor. When 44TT was used as donor and ITIC was used as acceptor, a power conversion efficiency (PCE) of up to 4.5% was obtained, a significant improvement when compared with the poly(3-hexylthiophene) (P3HT):ITIC devices, which showed the highest PCE of merely 0.92%.</description><identifier>ISSN: 2046-2069</identifier><identifier>EISSN: 2046-2069</identifier><identifier>DOI: 10.1039/c9ra06909g</identifier><language>eng</language><ispartof>RSC advances, 2019-09, Vol.9 (52), p.30496</ispartof><rights>This journal is © The Royal Society of Chemistry.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,860,27901,27902</link.rule.ids></links><search><creatorcontrib>Zhou, Xiaocheng</creatorcontrib><creatorcontrib>Zhang, Zhifang</creatorcontrib><creatorcontrib>Hendsbee, Arthur D</creatorcontrib><creatorcontrib>Ngai, Jenner H L</creatorcontrib><creatorcontrib>Kumar, Pankaj</creatorcontrib><creatorcontrib>Ye, Shuyang</creatorcontrib><creatorcontrib>Seferos, Dwight S</creatorcontrib><creatorcontrib>Li, Yuning</creatorcontrib><title>2,2'-Bithiophene-4,4'-dicarboxamide: a novel building block for semiconducting polymers</title><title>RSC advances</title><description>A novel electron deficient building block [2,2'-bithiophene]-4,4'-dicarboxamide (BTDCA) was designed to lower the highest occupied molecular orbital (HOMO) energy level of polythiophenes in order to achieve a higher open circuit voltage (V oc) and thus a higher power conversion efficiency in polymer solar cells (PSCs). BTDCA dibromo monomers were conveniently synthesized in four steps, and were used to prepare three thiophene-based D-A polymers, P(BTDCA66-BT) (66BT), P(BTDCA44-BT) (44BT) and P(BTDCA44-TT) (44TT). All the polymers exhibited unipolar hole transport properties, exhibiting mobilities in the range of ∼10-4 to 10-2 cm2 V-1 s-1 with the highest hole mobility of up to 1.43 × 10-2 cm2 V-1 s-1 achieved for 44BT in bottom-gate bottom-contact organic thin film transistors (OTFTs). In PSCs, these polymers achieved high V oc's of 0.81-0.87 V when PCBM or ITIC was used as acceptor. When 44TT was used as donor and ITIC was used as acceptor, a power conversion efficiency (PCE) of up to 4.5% was obtained, a significant improvement when compared with the poly(3-hexylthiophene) (P3HT):ITIC devices, which showed the highest PCE of merely 0.92%.A novel electron deficient building block [2,2'-bithiophene]-4,4'-dicarboxamide (BTDCA) was designed to lower the highest occupied molecular orbital (HOMO) energy level of polythiophenes in order to achieve a higher open circuit voltage (V oc) and thus a higher power conversion efficiency in polymer solar cells (PSCs). BTDCA dibromo monomers were conveniently synthesized in four steps, and were used to prepare three thiophene-based D-A polymers, P(BTDCA66-BT) (66BT), P(BTDCA44-BT) (44BT) and P(BTDCA44-TT) (44TT). All the polymers exhibited unipolar hole transport properties, exhibiting mobilities in the range of ∼10-4 to 10-2 cm2 V-1 s-1 with the highest hole mobility of up to 1.43 × 10-2 cm2 V-1 s-1 achieved for 44BT in bottom-gate bottom-contact organic thin film transistors (OTFTs). In PSCs, these polymers achieved high V oc's of 0.81-0.87 V when PCBM or ITIC was used as acceptor. When 44TT was used as donor and ITIC was used as acceptor, a power conversion efficiency (PCE) of up to 4.5% was obtained, a significant improvement when compared with the poly(3-hexylthiophene) (P3HT):ITIC devices, which showed the highest PCE of merely 0.92%.</description><issn>2046-2069</issn><issn>2046-2069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqVirFuwjAURS3USiDK0i_wBgNubSc1uCMViA-o1DFynEfi1vELdlLB30MlBtbe5Z6rcwl5FvxF8Ey_Wh0NV5rrekQmkueKyet8uOMxmaX0za9Rb0IqMSFfcinnbOP6xmHXQACWL_M5q5w1scSTaV0F79TQgL_gaTk4X7lQ09Kj_aEHjDRB6yyGarD9n-jQn1uI6Yk8HoxPMLv1lCx228-PPesiHgdIfdG6ZMF7EwCHVEilRL7O1Epn_7heAAzHSvE</recordid><startdate>20190923</startdate><enddate>20190923</enddate><creator>Zhou, Xiaocheng</creator><creator>Zhang, Zhifang</creator><creator>Hendsbee, Arthur D</creator><creator>Ngai, Jenner H L</creator><creator>Kumar, Pankaj</creator><creator>Ye, Shuyang</creator><creator>Seferos, Dwight S</creator><creator>Li, Yuning</creator><scope>7X8</scope></search><sort><creationdate>20190923</creationdate><title>2,2'-Bithiophene-4,4'-dicarboxamide: a novel building block for semiconducting polymers</title><author>Zhou, Xiaocheng ; Zhang, Zhifang ; Hendsbee, Arthur D ; Ngai, Jenner H L ; Kumar, Pankaj ; Ye, Shuyang ; Seferos, Dwight S ; Li, Yuning</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_26614836793</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhou, Xiaocheng</creatorcontrib><creatorcontrib>Zhang, Zhifang</creatorcontrib><creatorcontrib>Hendsbee, Arthur D</creatorcontrib><creatorcontrib>Ngai, Jenner H L</creatorcontrib><creatorcontrib>Kumar, Pankaj</creatorcontrib><creatorcontrib>Ye, Shuyang</creatorcontrib><creatorcontrib>Seferos, Dwight S</creatorcontrib><creatorcontrib>Li, Yuning</creatorcontrib><collection>MEDLINE - Academic</collection><jtitle>RSC advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhou, Xiaocheng</au><au>Zhang, Zhifang</au><au>Hendsbee, Arthur D</au><au>Ngai, Jenner H L</au><au>Kumar, Pankaj</au><au>Ye, Shuyang</au><au>Seferos, Dwight S</au><au>Li, Yuning</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>2,2'-Bithiophene-4,4'-dicarboxamide: a novel building block for semiconducting polymers</atitle><jtitle>RSC advances</jtitle><date>2019-09-23</date><risdate>2019</risdate><volume>9</volume><issue>52</issue><spage>30496</spage><pages>30496-</pages><issn>2046-2069</issn><eissn>2046-2069</eissn><abstract>A novel electron deficient building block [2,2'-bithiophene]-4,4'-dicarboxamide (BTDCA) was designed to lower the highest occupied molecular orbital (HOMO) energy level of polythiophenes in order to achieve a higher open circuit voltage (V oc) and thus a higher power conversion efficiency in polymer solar cells (PSCs). BTDCA dibromo monomers were conveniently synthesized in four steps, and were used to prepare three thiophene-based D-A polymers, P(BTDCA66-BT) (66BT), P(BTDCA44-BT) (44BT) and P(BTDCA44-TT) (44TT). All the polymers exhibited unipolar hole transport properties, exhibiting mobilities in the range of ∼10-4 to 10-2 cm2 V-1 s-1 with the highest hole mobility of up to 1.43 × 10-2 cm2 V-1 s-1 achieved for 44BT in bottom-gate bottom-contact organic thin film transistors (OTFTs). In PSCs, these polymers achieved high V oc's of 0.81-0.87 V when PCBM or ITIC was used as acceptor. When 44TT was used as donor and ITIC was used as acceptor, a power conversion efficiency (PCE) of up to 4.5% was obtained, a significant improvement when compared with the poly(3-hexylthiophene) (P3HT):ITIC devices, which showed the highest PCE of merely 0.92%.A novel electron deficient building block [2,2'-bithiophene]-4,4'-dicarboxamide (BTDCA) was designed to lower the highest occupied molecular orbital (HOMO) energy level of polythiophenes in order to achieve a higher open circuit voltage (V oc) and thus a higher power conversion efficiency in polymer solar cells (PSCs). BTDCA dibromo monomers were conveniently synthesized in four steps, and were used to prepare three thiophene-based D-A polymers, P(BTDCA66-BT) (66BT), P(BTDCA44-BT) (44BT) and P(BTDCA44-TT) (44TT). All the polymers exhibited unipolar hole transport properties, exhibiting mobilities in the range of ∼10-4 to 10-2 cm2 V-1 s-1 with the highest hole mobility of up to 1.43 × 10-2 cm2 V-1 s-1 achieved for 44BT in bottom-gate bottom-contact organic thin film transistors (OTFTs). In PSCs, these polymers achieved high V oc's of 0.81-0.87 V when PCBM or ITIC was used as acceptor. When 44TT was used as donor and ITIC was used as acceptor, a power conversion efficiency (PCE) of up to 4.5% was obtained, a significant improvement when compared with the poly(3-hexylthiophene) (P3HT):ITIC devices, which showed the highest PCE of merely 0.92%.</abstract><doi>10.1039/c9ra06909g</doi></addata></record> |
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title | 2,2'-Bithiophene-4,4'-dicarboxamide: a novel building block for semiconducting polymers |
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