Atomic layer deposition and tellurization of Ge-Sb film for phase-change memory applications

We studied the atomic layer deposition (ALD) and the tellurization of Ge-Sb films to prepare conformal crystalline Ge-Sb-Te (GST) films and to achieve void-free gap filling for emerging phase-change memory applications. ALD Ge-Sb film was prepared by alternating exposures to GeCl 2 -dioxane and Sb(S...

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Veröffentlicht in:	RSC advances 2019-06, Vol.9 (3), p.17291-17298
Hauptverfasser:	Kim, Yewon, Han, Byeol, Kim, Yu-Jin, Shin, Jeeyoon, Kim, Seongyoon, Hidayat, Romel, Park, Jae-Min, Koh, Wonyong, Lee, Won-Jun
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Antimony Atomic layer epitaxy Chemistry Composition Computer memory Cycle ratio Germanium chlorides Phase transitions Tellurium Temperature Transition temperature
Online-Zugang:	Volltext
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