Fully coupled dynamic electro-thermal simulation
Fully coupled dynamic electro-thermal simulation on chip and circuit level is presented. Temperature dependent thermal conductivity of silicon is taken into account, thus solving the nonlinear heat diffusion equation. The numerical solution is carried out by using the industry-standard simulator SAB...
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| Veröffentlicht in: | IEEE transactions on very large scale integration (VLSI) systems 1997-09, Vol.5 (3), p.250-257 |
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| container_end_page | 257 |
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| container_issue | 3 |
| container_start_page | 250 |
| container_title | IEEE transactions on very large scale integration (VLSI) systems |
| container_volume | 5 |
| creator | Digele, G. Lindenkreuz, S. Kasper, E. |
| description | Fully coupled dynamic electro-thermal simulation on chip and circuit level is presented. Temperature dependent thermal conductivity of silicon is taken into account, thus solving the nonlinear heat diffusion equation. The numerical solution is carried out by using the industry-standard simulator SABER, therefore for electro-thermal simulations we are able to use the common electrical compact models by adding a heat source and thermal pins to them. The application of this technique and need for electro-thermal simulation is illustrated with the simulation of a current control circuit built into a multiwatt package. |
| doi_str_mv | 10.1109/92.609867 |
| format | Article |
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Temperature dependent thermal conductivity of silicon is taken into account, thus solving the nonlinear heat diffusion equation. The numerical solution is carried out by using the industry-standard simulator SABER, therefore for electro-thermal simulations we are able to use the common electrical compact models by adding a heat source and thermal pins to them. The application of this technique and need for electro-thermal simulation is illustrated with the simulation of a current control circuit built into a multiwatt package.</description><identifier>ISSN: 1063-8210</identifier><identifier>EISSN: 1557-9999</identifier><identifier>DOI: 10.1109/92.609867</identifier><identifier>CODEN: IEVSE9</identifier><language>eng</language><publisher>Piscataway, NJ: IEEE</publisher><subject>Applied sciences ; Circuit simulation ; Coupling circuits ; Design. Technologies. Operation analysis. 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Temperature dependent thermal conductivity of silicon is taken into account, thus solving the nonlinear heat diffusion equation. The numerical solution is carried out by using the industry-standard simulator SABER, therefore for electro-thermal simulations we are able to use the common electrical compact models by adding a heat source and thermal pins to them. The application of this technique and need for electro-thermal simulation is illustrated with the simulation of a current control circuit built into a multiwatt package.</description><subject>Applied sciences</subject><subject>Circuit simulation</subject><subject>Coupling circuits</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric current control</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Nonlinear equations</subject><subject>Packaging</subject><subject>Pins</subject><subject>Resistance heating</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Temperature dependence</subject><subject>Thermal conductivity</subject><issn>1063-8210</issn><issn>1557-9999</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNqFkDFPwzAQRi0EEqUwsDJlQEgMKWc7ie0RVRSQKrHAHF3tiwhykmInQ_49qVJ15ZY76Xv3ho-xWw4rzsE8GbEqwOhCnbEFz3OVmmnOpxsKmWrB4ZJdxfgDwLPMwILBZvB-TGw37D25xI0tNrVNyJPtQ5f23xQa9Emsm8FjX3ftNbuo0Ee6Oe4l-9q8fK7f0u3H6_v6eZtaKVWfGiIrjCOLBLhTWbVzLtOarEVrJewgBy1RKOWQO2WQF8JhoXheWS1ckckle5i9-9D9DhT7sqmjJe-xpW6IpdASZK7gf7DItZLZwfg4gzZ0MQaqyn2oGwxjyaE8lFcaUc7lTez9UYrRoq8CtraOpwehhcgzMWF3M1YT0Sk9Ov4AvNp2nw</recordid><startdate>19970901</startdate><enddate>19970901</enddate><creator>Digele, G.</creator><creator>Lindenkreuz, S.</creator><creator>Kasper, E.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7SP</scope></search><sort><creationdate>19970901</creationdate><title>Fully coupled dynamic electro-thermal simulation</title><author>Digele, G. ; Lindenkreuz, S. ; Kasper, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-9eec29decae0ab74fbdd488eccacc30b05083a277da1d79a162da6715fc82d643</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Applied sciences</topic><topic>Circuit simulation</topic><topic>Coupling circuits</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electric current control</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Nonlinear equations</topic><topic>Packaging</topic><topic>Pins</topic><topic>Resistance heating</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Temperature dependence</topic><topic>Thermal conductivity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Digele, G.</creatorcontrib><creatorcontrib>Lindenkreuz, S.</creatorcontrib><creatorcontrib>Kasper, E.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><jtitle>IEEE transactions on very large scale integration (VLSI) systems</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Digele, G.</au><au>Lindenkreuz, S.</au><au>Kasper, E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fully coupled dynamic electro-thermal simulation</atitle><jtitle>IEEE transactions on very large scale integration (VLSI) systems</jtitle><stitle>TVLSI</stitle><date>1997-09-01</date><risdate>1997</risdate><volume>5</volume><issue>3</issue><spage>250</spage><epage>257</epage><pages>250-257</pages><issn>1063-8210</issn><eissn>1557-9999</eissn><coden>IEVSE9</coden><abstract>Fully coupled dynamic electro-thermal simulation on chip and circuit level is presented. Temperature dependent thermal conductivity of silicon is taken into account, thus solving the nonlinear heat diffusion equation. The numerical solution is carried out by using the industry-standard simulator SABER, therefore for electro-thermal simulations we are able to use the common electrical compact models by adding a heat source and thermal pins to them. The application of this technique and need for electro-thermal simulation is illustrated with the simulation of a current control circuit built into a multiwatt package.</abstract><cop>Piscataway, NJ</cop><pub>IEEE</pub><doi>10.1109/92.609867</doi><tpages>8</tpages></addata></record> |
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| identifier | ISSN: 1063-8210 |
| ispartof | IEEE transactions on very large scale integration (VLSI) systems, 1997-09, Vol.5 (3), p.250-257 |
| issn | 1063-8210 1557-9999 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_26587344 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Circuit simulation Coupling circuits Design. Technologies. Operation analysis. Testing Electric current control Electronics Exact sciences and technology Integrated circuits Nonlinear equations Packaging Pins Resistance heating Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Temperature dependence Thermal conductivity |
| title | Fully coupled dynamic electro-thermal simulation |
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