Enhanced UV–Vis photodetector performance by optimizing interfacial charge transportation in the heterostructure by SnS and SnSe2
[Display omitted] Optimizing interfacial charge transfer in type-II heterostructures, is one promising solution to improve efficiency of the solar energy conversion in photodetectors and solar cells. Herein, the SnS/SnSe2/ITO and SnSe2/SnS/ITO heterostructures are prepared by two-step physical vapor...
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| Veröffentlicht in: | Journal of colloid and interface science 2022-09, Vol.621, p.374-384 |
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| container_title | Journal of colloid and interface science |
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| creator | Dong, Wen Lu, Chunhui Luo, Mingwei Liu, Yuqi Han, Taotao Ge, Yanqing Xue, Xinyi Zhou, Yixuan Xu, Xinlong |
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Optimizing interfacial charge transfer in type-II heterostructures, is one promising solution to improve efficiency of the solar energy conversion in photodetectors and solar cells. Herein, the SnS/SnSe2/ITO and SnSe2/SnS/ITO heterostructures are prepared by two-step physical vapor epitaxial growth. X-ray photoelectron spectroscopy confirms the SnS/SnSe2 heterostructure belongs to type-II band-alignment. The SnS/SnSe2 based photodetector shows higher photoresponsivity, which is approximately 2, 9, and 14 times larger than that of SnSe2/SnS, SnSe2, and SnS, respectively. The improvement of SnS/SnSe2 in photoelectric response mainly comes from high light harvesting and efficient charge transportation than individual SnSe2 and SnS, which is verified by UV–Vis absorption spectra. Electrochemical impedance spectroscopy, open circuit potentials, and Mott‐Schottky characterization results further confirm that the better photodetection performance of SnS/SnSe2/ITO than that of SnSe2/SnS/ITO heterostructure is from the appropriate energy level cascade facilitating electron transport. These results provide an effective way to further improve the performance of heterostructure-based optoelectronic devices by an appropriate interface design. |
| doi_str_mv | 10.1016/j.jcis.2022.04.041 |
| format | Article |
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Optimizing interfacial charge transfer in type-II heterostructures, is one promising solution to improve efficiency of the solar energy conversion in photodetectors and solar cells. Herein, the SnS/SnSe2/ITO and SnSe2/SnS/ITO heterostructures are prepared by two-step physical vapor epitaxial growth. X-ray photoelectron spectroscopy confirms the SnS/SnSe2 heterostructure belongs to type-II band-alignment. The SnS/SnSe2 based photodetector shows higher photoresponsivity, which is approximately 2, 9, and 14 times larger than that of SnSe2/SnS, SnSe2, and SnS, respectively. The improvement of SnS/SnSe2 in photoelectric response mainly comes from high light harvesting and efficient charge transportation than individual SnSe2 and SnS, which is verified by UV–Vis absorption spectra. Electrochemical impedance spectroscopy, open circuit potentials, and Mott‐Schottky characterization results further confirm that the better photodetection performance of SnS/SnSe2/ITO than that of SnSe2/SnS/ITO heterostructure is from the appropriate energy level cascade facilitating electron transport. These results provide an effective way to further improve the performance of heterostructure-based optoelectronic devices by an appropriate interface design.</description><identifier>ISSN: 0021-9797</identifier><identifier>EISSN: 1095-7103</identifier><identifier>DOI: 10.1016/j.jcis.2022.04.041</identifier><language>eng</language><publisher>Elsevier Inc</publisher><subject>Charge transportation ; Light utilization ; SnS/SnSe2 and SnSe2/SnS heterostructure ; UV–Vis photodetector</subject><ispartof>Journal of colloid and interface science, 2022-09, Vol.621, p.374-384</ispartof><rights>2022 Elsevier Inc.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c263t-936433961c3ec8ce1bd12e5a4992b6e62ecb2721b6ac0d32c9fba5b7b40d3053</citedby><cites>FETCH-LOGICAL-c263t-936433961c3ec8ce1bd12e5a4992b6e62ecb2721b6ac0d32c9fba5b7b40d3053</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcis.2022.04.041$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Dong, Wen</creatorcontrib><creatorcontrib>Lu, Chunhui</creatorcontrib><creatorcontrib>Luo, Mingwei</creatorcontrib><creatorcontrib>Liu, Yuqi</creatorcontrib><creatorcontrib>Han, Taotao</creatorcontrib><creatorcontrib>Ge, Yanqing</creatorcontrib><creatorcontrib>Xue, Xinyi</creatorcontrib><creatorcontrib>Zhou, Yixuan</creatorcontrib><creatorcontrib>Xu, Xinlong</creatorcontrib><title>Enhanced UV–Vis photodetector performance by optimizing interfacial charge transportation in the heterostructure by SnS and SnSe2</title><title>Journal of colloid and interface science</title><description>[Display omitted]
Optimizing interfacial charge transfer in type-II heterostructures, is one promising solution to improve efficiency of the solar energy conversion in photodetectors and solar cells. Herein, the SnS/SnSe2/ITO and SnSe2/SnS/ITO heterostructures are prepared by two-step physical vapor epitaxial growth. X-ray photoelectron spectroscopy confirms the SnS/SnSe2 heterostructure belongs to type-II band-alignment. The SnS/SnSe2 based photodetector shows higher photoresponsivity, which is approximately 2, 9, and 14 times larger than that of SnSe2/SnS, SnSe2, and SnS, respectively. The improvement of SnS/SnSe2 in photoelectric response mainly comes from high light harvesting and efficient charge transportation than individual SnSe2 and SnS, which is verified by UV–Vis absorption spectra. Electrochemical impedance spectroscopy, open circuit potentials, and Mott‐Schottky characterization results further confirm that the better photodetection performance of SnS/SnSe2/ITO than that of SnSe2/SnS/ITO heterostructure is from the appropriate energy level cascade facilitating electron transport. These results provide an effective way to further improve the performance of heterostructure-based optoelectronic devices by an appropriate interface design.</description><subject>Charge transportation</subject><subject>Light utilization</subject><subject>SnS/SnSe2 and SnSe2/SnS heterostructure</subject><subject>UV–Vis photodetector</subject><issn>0021-9797</issn><issn>1095-7103</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kM9KAzEQxoMoWKsv4ClHL1uT7D8DXqTUP1Dw0NpryGan3SzbZE1SoZ4EH8E39EnMWs_CwDDM933M_BC6pGRCCS2u20mrtJ8wwtiEZLHoERpRwvOkpCQ9RiNCGE14yctTdOZ9Swilec5H6HNmGmkU1Phl9f3xtdIe940NtoYAKliHe3Br67aDBld7bPugt_pdmw3WJsSdVFp2WDXSbQAHJ43vrQsyaGuiAocGcBOznPXB7VTYud-YhVlgaeqhAztHJ2vZebj462O0vJ8tp4_J_PnhaXo3TxQr0pDwtMjSlBdUpaBuFNCqpgxymXHOqgIKBqpiJaNVIRWpU6b4upJ5VVZZnEiejtHVIbZ39nUHPoit9gq6ThqwOy9YkecRVklZlLKDVMW7vYO16J3eSrcXlIgBuGjFAFwMwAXJYtFouj2YIP7wpsEJrzQMbLWLLEVt9X_2Hz8JjYA</recordid><startdate>202209</startdate><enddate>202209</enddate><creator>Dong, Wen</creator><creator>Lu, Chunhui</creator><creator>Luo, Mingwei</creator><creator>Liu, Yuqi</creator><creator>Han, Taotao</creator><creator>Ge, Yanqing</creator><creator>Xue, Xinyi</creator><creator>Zhou, Yixuan</creator><creator>Xu, Xinlong</creator><general>Elsevier Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>202209</creationdate><title>Enhanced UV–Vis photodetector performance by optimizing interfacial charge transportation in the heterostructure by SnS and SnSe2</title><author>Dong, Wen ; Lu, Chunhui ; Luo, Mingwei ; Liu, Yuqi ; Han, Taotao ; Ge, Yanqing ; Xue, Xinyi ; Zhou, Yixuan ; Xu, Xinlong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c263t-936433961c3ec8ce1bd12e5a4992b6e62ecb2721b6ac0d32c9fba5b7b40d3053</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Charge transportation</topic><topic>Light utilization</topic><topic>SnS/SnSe2 and SnSe2/SnS heterostructure</topic><topic>UV–Vis photodetector</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dong, Wen</creatorcontrib><creatorcontrib>Lu, Chunhui</creatorcontrib><creatorcontrib>Luo, Mingwei</creatorcontrib><creatorcontrib>Liu, Yuqi</creatorcontrib><creatorcontrib>Han, Taotao</creatorcontrib><creatorcontrib>Ge, Yanqing</creatorcontrib><creatorcontrib>Xue, Xinyi</creatorcontrib><creatorcontrib>Zhou, Yixuan</creatorcontrib><creatorcontrib>Xu, Xinlong</creatorcontrib><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Journal of colloid and interface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dong, Wen</au><au>Lu, Chunhui</au><au>Luo, Mingwei</au><au>Liu, Yuqi</au><au>Han, Taotao</au><au>Ge, Yanqing</au><au>Xue, Xinyi</au><au>Zhou, Yixuan</au><au>Xu, Xinlong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced UV–Vis photodetector performance by optimizing interfacial charge transportation in the heterostructure by SnS and SnSe2</atitle><jtitle>Journal of colloid and interface science</jtitle><date>2022-09</date><risdate>2022</risdate><volume>621</volume><spage>374</spage><epage>384</epage><pages>374-384</pages><issn>0021-9797</issn><eissn>1095-7103</eissn><abstract>[Display omitted]
Optimizing interfacial charge transfer in type-II heterostructures, is one promising solution to improve efficiency of the solar energy conversion in photodetectors and solar cells. Herein, the SnS/SnSe2/ITO and SnSe2/SnS/ITO heterostructures are prepared by two-step physical vapor epitaxial growth. X-ray photoelectron spectroscopy confirms the SnS/SnSe2 heterostructure belongs to type-II band-alignment. The SnS/SnSe2 based photodetector shows higher photoresponsivity, which is approximately 2, 9, and 14 times larger than that of SnSe2/SnS, SnSe2, and SnS, respectively. The improvement of SnS/SnSe2 in photoelectric response mainly comes from high light harvesting and efficient charge transportation than individual SnSe2 and SnS, which is verified by UV–Vis absorption spectra. Electrochemical impedance spectroscopy, open circuit potentials, and Mott‐Schottky characterization results further confirm that the better photodetection performance of SnS/SnSe2/ITO than that of SnSe2/SnS/ITO heterostructure is from the appropriate energy level cascade facilitating electron transport. These results provide an effective way to further improve the performance of heterostructure-based optoelectronic devices by an appropriate interface design.</abstract><pub>Elsevier Inc</pub><doi>10.1016/j.jcis.2022.04.041</doi><tpages>11</tpages></addata></record> |
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| subjects | Charge transportation Light utilization SnS/SnSe2 and SnSe2/SnS heterostructure UV–Vis photodetector |
| title | Enhanced UV–Vis photodetector performance by optimizing interfacial charge transportation in the heterostructure by SnS and SnSe2 |
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