In Situ Evolution of Secondary Metallic Phases in Off-Stoichiometric ZrNiSn for Enhanced Thermoelectric Performance
The full-Heusler (FH) inclusions in the half-Heusler (HH) matrix is a well-studied approach to reduce the lattice thermal conductivity of ZrNiSn HH alloy. However, excess Ni in ZrNiSn may lead to the in situ formation of FH and/or HH alloys with interstitial Ni defects. The excess Ni develops interm...
Gespeichert in:
Veröffentlicht in: | ACS applied materials & interfaces 2022-05, Vol.14 (17), p.19579-19593 |
---|---|
Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 19593 |
---|---|
container_issue | 17 |
container_start_page | 19579 |
container_title | ACS applied materials & interfaces |
container_volume | 14 |
creator | Johari, Kishor Kumar Sharma, Durgesh Kumar Verma, Ajay Kumar Bhardwaj, Ruchi Chauhan, Nagendra S Kumar, Sudhir Singh, Manvendra Narayan Bathula, Sivaiah Gahtori, Bhasker |
description | The full-Heusler (FH) inclusions in the half-Heusler (HH) matrix is a well-studied approach to reduce the lattice thermal conductivity of ZrNiSn HH alloy. However, excess Ni in ZrNiSn may lead to the in situ formation of FH and/or HH alloys with interstitial Ni defects. The excess Ni develops intermediate electronic states in the band gap of ZrNiSn and also generates defects to scatter phonons, thus providing additional control to tailor electronic and phonon transport properties synergistically. In this work, we present the implication of isoelectronic Ge-doping and excess Ni on the thermoelectric transport of ZrNiSn. The synthesized ZrNi1.04Sn1–x Ge x (x = 0–0.04) samples were prepared by arc-melting and spark plasma sintering, and were extensively probed for microstructural analysis. The in situ evolution of minor secondary phases, i.e., FH, Ni–Sn, and Sn–Zr, primarily observed post sintering resulted in simultaneous optimization of the electrical power factor and lattice thermal conductivity. A ZT of ∼1.06 at ∼873 K was attained, which is among the highest for Hf-free ZrNiSn-based HH alloys. Additionally, ab initio calculations based on density functional theory (DFT) were performed to provide comparative insights into experimentally measured properties and understand underlying physics. Further, mechanical properties were experimentally extracted to determine the usability of synthesized alloys for device fabrication. |
doi_str_mv | 10.1021/acsami.2c03065 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_2653266081</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2653266081</sourcerecordid><originalsourceid>FETCH-LOGICAL-a396t-f321d0f6a160f5746ef6eae8217af55204ff3ef112e6cb94d40c8959c524b383</originalsourceid><addsrcrecordid>eNp1kM1LAzEUxIMoVqtXj5KjCFvz3d2jSP2AagvtycuSZl9oym6iya7gf-_W1t48vQfzm4EZhK4oGVHC6J02STduxAzhRMkjdEYLIbKcSXZ8-IUYoPOUNoQozog8RQMuhWCK0TOUXjxeuLbDk69Qd60LHgeLF2CCr3T8xq_Q6rp2Bs_XOkHCzuOZtdmiDc6sXWigjb34Ht_cwmMbIp74tfYGKrxcQ2wC1GB-kTnEXm622gU6sbpOcLm_Q7R8nCwfnrPp7Onl4X6aaV6oNrOc0YpYpakiVo6FAqtAQ87oWFspGRHWcrCUMlBmVYhKEJMXsjCSiRXP-RDd7GI_YvjsILVl45KButYeQpdKpiRnSpGc9uhoh5oYUopgy4_omr5_SUm53bnc7Vzud-4N1_vsbtVAdcD_hu2B2x3QG8tN6KLvm_6X9gNYUIjV</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2653266081</pqid></control><display><type>article</type><title>In Situ Evolution of Secondary Metallic Phases in Off-Stoichiometric ZrNiSn for Enhanced Thermoelectric Performance</title><source>American Chemical Society Journals</source><creator>Johari, Kishor Kumar ; Sharma, Durgesh Kumar ; Verma, Ajay Kumar ; Bhardwaj, Ruchi ; Chauhan, Nagendra S ; Kumar, Sudhir ; Singh, Manvendra Narayan ; Bathula, Sivaiah ; Gahtori, Bhasker</creator><creatorcontrib>Johari, Kishor Kumar ; Sharma, Durgesh Kumar ; Verma, Ajay Kumar ; Bhardwaj, Ruchi ; Chauhan, Nagendra S ; Kumar, Sudhir ; Singh, Manvendra Narayan ; Bathula, Sivaiah ; Gahtori, Bhasker</creatorcontrib><description>The full-Heusler (FH) inclusions in the half-Heusler (HH) matrix is a well-studied approach to reduce the lattice thermal conductivity of ZrNiSn HH alloy. However, excess Ni in ZrNiSn may lead to the in situ formation of FH and/or HH alloys with interstitial Ni defects. The excess Ni develops intermediate electronic states in the band gap of ZrNiSn and also generates defects to scatter phonons, thus providing additional control to tailor electronic and phonon transport properties synergistically. In this work, we present the implication of isoelectronic Ge-doping and excess Ni on the thermoelectric transport of ZrNiSn. The synthesized ZrNi1.04Sn1–x Ge x (x = 0–0.04) samples were prepared by arc-melting and spark plasma sintering, and were extensively probed for microstructural analysis. The in situ evolution of minor secondary phases, i.e., FH, Ni–Sn, and Sn–Zr, primarily observed post sintering resulted in simultaneous optimization of the electrical power factor and lattice thermal conductivity. A ZT of ∼1.06 at ∼873 K was attained, which is among the highest for Hf-free ZrNiSn-based HH alloys. Additionally, ab initio calculations based on density functional theory (DFT) were performed to provide comparative insights into experimentally measured properties and understand underlying physics. Further, mechanical properties were experimentally extracted to determine the usability of synthesized alloys for device fabrication.</description><identifier>ISSN: 1944-8244</identifier><identifier>EISSN: 1944-8252</identifier><identifier>DOI: 10.1021/acsami.2c03065</identifier><identifier>PMID: 35442621</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><subject>Energy, Environmental, and Catalysis Applications</subject><ispartof>ACS applied materials & interfaces, 2022-05, Vol.14 (17), p.19579-19593</ispartof><rights>2022 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a396t-f321d0f6a160f5746ef6eae8217af55204ff3ef112e6cb94d40c8959c524b383</citedby><cites>FETCH-LOGICAL-a396t-f321d0f6a160f5746ef6eae8217af55204ff3ef112e6cb94d40c8959c524b383</cites><orcidid>0000-0003-2240-6637 ; 0000-0002-2222-7906 ; 0000-0003-2579-6642 ; 0000-0001-6093-6351</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acsami.2c03065$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acsami.2c03065$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2765,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/35442621$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Johari, Kishor Kumar</creatorcontrib><creatorcontrib>Sharma, Durgesh Kumar</creatorcontrib><creatorcontrib>Verma, Ajay Kumar</creatorcontrib><creatorcontrib>Bhardwaj, Ruchi</creatorcontrib><creatorcontrib>Chauhan, Nagendra S</creatorcontrib><creatorcontrib>Kumar, Sudhir</creatorcontrib><creatorcontrib>Singh, Manvendra Narayan</creatorcontrib><creatorcontrib>Bathula, Sivaiah</creatorcontrib><creatorcontrib>Gahtori, Bhasker</creatorcontrib><title>In Situ Evolution of Secondary Metallic Phases in Off-Stoichiometric ZrNiSn for Enhanced Thermoelectric Performance</title><title>ACS applied materials & interfaces</title><addtitle>ACS Appl. Mater. Interfaces</addtitle><description>The full-Heusler (FH) inclusions in the half-Heusler (HH) matrix is a well-studied approach to reduce the lattice thermal conductivity of ZrNiSn HH alloy. However, excess Ni in ZrNiSn may lead to the in situ formation of FH and/or HH alloys with interstitial Ni defects. The excess Ni develops intermediate electronic states in the band gap of ZrNiSn and also generates defects to scatter phonons, thus providing additional control to tailor electronic and phonon transport properties synergistically. In this work, we present the implication of isoelectronic Ge-doping and excess Ni on the thermoelectric transport of ZrNiSn. The synthesized ZrNi1.04Sn1–x Ge x (x = 0–0.04) samples were prepared by arc-melting and spark plasma sintering, and were extensively probed for microstructural analysis. The in situ evolution of minor secondary phases, i.e., FH, Ni–Sn, and Sn–Zr, primarily observed post sintering resulted in simultaneous optimization of the electrical power factor and lattice thermal conductivity. A ZT of ∼1.06 at ∼873 K was attained, which is among the highest for Hf-free ZrNiSn-based HH alloys. Additionally, ab initio calculations based on density functional theory (DFT) were performed to provide comparative insights into experimentally measured properties and understand underlying physics. Further, mechanical properties were experimentally extracted to determine the usability of synthesized alloys for device fabrication.</description><subject>Energy, Environmental, and Catalysis Applications</subject><issn>1944-8244</issn><issn>1944-8252</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp1kM1LAzEUxIMoVqtXj5KjCFvz3d2jSP2AagvtycuSZl9oym6iya7gf-_W1t48vQfzm4EZhK4oGVHC6J02STduxAzhRMkjdEYLIbKcSXZ8-IUYoPOUNoQozog8RQMuhWCK0TOUXjxeuLbDk69Qd60LHgeLF2CCr3T8xq_Q6rp2Bs_XOkHCzuOZtdmiDc6sXWigjb34Ht_cwmMbIp74tfYGKrxcQ2wC1GB-kTnEXm622gU6sbpOcLm_Q7R8nCwfnrPp7Onl4X6aaV6oNrOc0YpYpakiVo6FAqtAQ87oWFspGRHWcrCUMlBmVYhKEJMXsjCSiRXP-RDd7GI_YvjsILVl45KButYeQpdKpiRnSpGc9uhoh5oYUopgy4_omr5_SUm53bnc7Vzud-4N1_vsbtVAdcD_hu2B2x3QG8tN6KLvm_6X9gNYUIjV</recordid><startdate>20220504</startdate><enddate>20220504</enddate><creator>Johari, Kishor Kumar</creator><creator>Sharma, Durgesh Kumar</creator><creator>Verma, Ajay Kumar</creator><creator>Bhardwaj, Ruchi</creator><creator>Chauhan, Nagendra S</creator><creator>Kumar, Sudhir</creator><creator>Singh, Manvendra Narayan</creator><creator>Bathula, Sivaiah</creator><creator>Gahtori, Bhasker</creator><general>American Chemical Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0003-2240-6637</orcidid><orcidid>https://orcid.org/0000-0002-2222-7906</orcidid><orcidid>https://orcid.org/0000-0003-2579-6642</orcidid><orcidid>https://orcid.org/0000-0001-6093-6351</orcidid></search><sort><creationdate>20220504</creationdate><title>In Situ Evolution of Secondary Metallic Phases in Off-Stoichiometric ZrNiSn for Enhanced Thermoelectric Performance</title><author>Johari, Kishor Kumar ; Sharma, Durgesh Kumar ; Verma, Ajay Kumar ; Bhardwaj, Ruchi ; Chauhan, Nagendra S ; Kumar, Sudhir ; Singh, Manvendra Narayan ; Bathula, Sivaiah ; Gahtori, Bhasker</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a396t-f321d0f6a160f5746ef6eae8217af55204ff3ef112e6cb94d40c8959c524b383</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Energy, Environmental, and Catalysis Applications</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Johari, Kishor Kumar</creatorcontrib><creatorcontrib>Sharma, Durgesh Kumar</creatorcontrib><creatorcontrib>Verma, Ajay Kumar</creatorcontrib><creatorcontrib>Bhardwaj, Ruchi</creatorcontrib><creatorcontrib>Chauhan, Nagendra S</creatorcontrib><creatorcontrib>Kumar, Sudhir</creatorcontrib><creatorcontrib>Singh, Manvendra Narayan</creatorcontrib><creatorcontrib>Bathula, Sivaiah</creatorcontrib><creatorcontrib>Gahtori, Bhasker</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>ACS applied materials & interfaces</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Johari, Kishor Kumar</au><au>Sharma, Durgesh Kumar</au><au>Verma, Ajay Kumar</au><au>Bhardwaj, Ruchi</au><au>Chauhan, Nagendra S</au><au>Kumar, Sudhir</au><au>Singh, Manvendra Narayan</au><au>Bathula, Sivaiah</au><au>Gahtori, Bhasker</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>In Situ Evolution of Secondary Metallic Phases in Off-Stoichiometric ZrNiSn for Enhanced Thermoelectric Performance</atitle><jtitle>ACS applied materials & interfaces</jtitle><addtitle>ACS Appl. Mater. Interfaces</addtitle><date>2022-05-04</date><risdate>2022</risdate><volume>14</volume><issue>17</issue><spage>19579</spage><epage>19593</epage><pages>19579-19593</pages><issn>1944-8244</issn><eissn>1944-8252</eissn><abstract>The full-Heusler (FH) inclusions in the half-Heusler (HH) matrix is a well-studied approach to reduce the lattice thermal conductivity of ZrNiSn HH alloy. However, excess Ni in ZrNiSn may lead to the in situ formation of FH and/or HH alloys with interstitial Ni defects. The excess Ni develops intermediate electronic states in the band gap of ZrNiSn and also generates defects to scatter phonons, thus providing additional control to tailor electronic and phonon transport properties synergistically. In this work, we present the implication of isoelectronic Ge-doping and excess Ni on the thermoelectric transport of ZrNiSn. The synthesized ZrNi1.04Sn1–x Ge x (x = 0–0.04) samples were prepared by arc-melting and spark plasma sintering, and were extensively probed for microstructural analysis. The in situ evolution of minor secondary phases, i.e., FH, Ni–Sn, and Sn–Zr, primarily observed post sintering resulted in simultaneous optimization of the electrical power factor and lattice thermal conductivity. A ZT of ∼1.06 at ∼873 K was attained, which is among the highest for Hf-free ZrNiSn-based HH alloys. Additionally, ab initio calculations based on density functional theory (DFT) were performed to provide comparative insights into experimentally measured properties and understand underlying physics. Further, mechanical properties were experimentally extracted to determine the usability of synthesized alloys for device fabrication.</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>35442621</pmid><doi>10.1021/acsami.2c03065</doi><tpages>15</tpages><orcidid>https://orcid.org/0000-0003-2240-6637</orcidid><orcidid>https://orcid.org/0000-0002-2222-7906</orcidid><orcidid>https://orcid.org/0000-0003-2579-6642</orcidid><orcidid>https://orcid.org/0000-0001-6093-6351</orcidid></addata></record> |
fulltext | fulltext |
identifier | ISSN: 1944-8244 |
ispartof | ACS applied materials & interfaces, 2022-05, Vol.14 (17), p.19579-19593 |
issn | 1944-8244 1944-8252 |
language | eng |
recordid | cdi_proquest_miscellaneous_2653266081 |
source | American Chemical Society Journals |
subjects | Energy, Environmental, and Catalysis Applications |
title | In Situ Evolution of Secondary Metallic Phases in Off-Stoichiometric ZrNiSn for Enhanced Thermoelectric Performance |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T17%3A22%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=In%20Situ%20Evolution%20of%20Secondary%20Metallic%20Phases%20in%20Off-Stoichiometric%20ZrNiSn%20for%20Enhanced%20Thermoelectric%20Performance&rft.jtitle=ACS%20applied%20materials%20&%20interfaces&rft.au=Johari,%20Kishor%20Kumar&rft.date=2022-05-04&rft.volume=14&rft.issue=17&rft.spage=19579&rft.epage=19593&rft.pages=19579-19593&rft.issn=1944-8244&rft.eissn=1944-8252&rft_id=info:doi/10.1021/acsami.2c03065&rft_dat=%3Cproquest_cross%3E2653266081%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2653266081&rft_id=info:pmid/35442621&rfr_iscdi=true |