Dynamic model of silicon devices with energy-localized trap centers
The effects of deep localized traps on the dynamic behavior of devices is analyzed by adding two more continuity equations to the customary semiconductor-device model. Such equations account for the dynamic variation of the trapped charge. A novel solution method is also proposed, which maintains th...
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| Veröffentlicht in: | Microelectronics 1997-01, Vol.28 (1), p.93-100 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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