Dynamic model of silicon devices with energy-localized trap centers

The effects of deep localized traps on the dynamic behavior of devices is analyzed by adding two more continuity equations to the customary semiconductor-device model. Such equations account for the dynamic variation of the trapped charge. A novel solution method is also proposed, which maintains the same efficiency of the trap-free case without introducing any approximation in the description of the trap-state dynamics. The model is applied to predict the switching behavior of platinum-doped devices.