Process Control by Optical Emission Spectroscopy During Growth of a-C:H From a CH sub 4 Plasma by Plasma-Enhanced Chemical Vapour Deposition

During the growth of a-C:H thin films for tribological applications, the characteristic optical emission from a CH sub 4 plasma was used to estimate growth conditions such as the degree of dissociation of the feed gas, the deposition rate and the presence of impurities. Films were fabricated with va...

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Veröffentlicht in:Surface & coatings technology 1994-12, Vol.68/69, p.702-707
Hauptverfasser: Barholm-Hansen, C, Bentzon, M D, Vigild, M E, Findeisen, E, Feidenhans'l, R, Bindslev, H J
Format: Artikel
Sprache:eng
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