Initial growth stage and optical properties of a three-dimensional InAs structure on GaAs
A few mololayers of InAs is heteroepitaxially grown on GaAs substrate by molecular-beam epitaxy. Structure and optical properties are investigated. Reflection high-energy electron-diffraction observation reveals that an InAs layer forms a three-dimensional structure with specific facets after two-di...
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| Veröffentlicht in: | Journal of applied physics 1994-07, Vol.76 (1), p.347-351 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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