Characterization and theoretical analysis of second-order intermodulation distortion of InGaAs/InP p-i-n photodiode modules for fiber-optic CATV
InGaAs/InP p-i-n photodiode (PD) modules for fiber-optic analog CATV have been developed. The optical configuration was optimized by making use of a spherical lens aberration. Responsivity and second-order intermodulation distortion (IMD2) were 0.95 A/W and -85 dBc at V/sub r/=12 V, P/sub in/=0 dBm,...
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Veröffentlicht in: | Journal of lightwave technology 1997-04, Vol.15 (4), p.636-641 |
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creator | Kuhara, Y. Fujimura, Y. Nishiyama, N. Michituji, Y. Terauchi, H. Yamabayashi, N. |
description | InGaAs/InP p-i-n photodiode (PD) modules for fiber-optic analog CATV have been developed. The optical configuration was optimized by making use of a spherical lens aberration. Responsivity and second-order intermodulation distortion (IMD2) were 0.95 A/W and -85 dBc at V/sub r/=12 V, P/sub in/=0 dBm, and m=40%, respectively. The improvement of IMD2 by defocusing was explained by the decrease of incident optical power density calculated by ray tracing. IMD2 was quantitatively explained through the reverse voltage dependence of responsivity which originates from the variation of the p/sup +/-InGaAs depletion layer thickness. |
doi_str_mv | 10.1109/50.566684 |
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The optical configuration was optimized by making use of a spherical lens aberration. Responsivity and second-order intermodulation distortion (IMD2) were 0.95 A/W and -85 dBc at V/sub r/=12 V, P/sub in/=0 dBm, and m=40%, respectively. The improvement of IMD2 by defocusing was explained by the decrease of incident optical power density calculated by ray tracing. IMD2 was quantitatively explained through the reverse voltage dependence of responsivity which originates from the variation of the p/sup +/-InGaAs depletion layer thickness.</description><identifier>ISSN: 0733-8724</identifier><identifier>EISSN: 1558-2213</identifier><identifier>DOI: 10.1109/50.566684</identifier><identifier>CODEN: JLTEDG</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Fiber nonlinear optics ; Indium gallium arsenide ; Indium phosphide ; Intermodulation distortion ; Nonlinear optics ; Optical distortion ; Optical mixing ; Optical receivers ; Optoelectronic devices ; PIN photodiodes ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The optical configuration was optimized by making use of a spherical lens aberration. Responsivity and second-order intermodulation distortion (IMD2) were 0.95 A/W and -85 dBc at V/sub r/=12 V, P/sub in/=0 dBm, and m=40%, respectively. The improvement of IMD2 by defocusing was explained by the decrease of incident optical power density calculated by ray tracing. IMD2 was quantitatively explained through the reverse voltage dependence of responsivity which originates from the variation of the p/sup +/-InGaAs depletion layer thickness.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fiber nonlinear optics</subject><subject>Indium gallium arsenide</subject><subject>Indium phosphide</subject><subject>Intermodulation distortion</subject><subject>Nonlinear optics</subject><subject>Optical distortion</subject><subject>Optical mixing</subject><subject>Optical receivers</subject><subject>Optoelectronic devices</subject><subject>PIN photodiodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Voltage</subject><issn>0733-8724</issn><issn>1558-2213</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNqFkT9vFDEQxS0EEkegoKVygZAonPjv2i5PpxBOihSKQLuatWd1Rnvrxd4rkk_BR2aTPaWlmhnN770nzRDyUfBLIbi_MvzSNE3j9CuyEcY4JqVQr8mGW6WYs1K_Je9q_c250NrZDfm7O0CBMGNJjzCnPFIYI50PmAvOKcCwzDA81FRp7mnFkMfIcolYaBoX1THH07AKY6pzLs_tgu7HG9jWq_34g04ssZFOhzznmHJE-izCSvtcaJ86LCxPSxjdbe9_vSdvehgqfjjXC_Lz2_X97ju7vbvZ77a3LChlZwbKCBCy97HplO2i8tJrNKCEEdpII13sGus9V501DQbfKekUAASvApe9uiBfVt-p5D8nrHN7TDXgMMCI-VRb6YS3Wqj_g422zii-gF9XMJRca8G-nUo6QnloBW-fntMa3q7PWdjPZ1Ooy5H7AmNI9UUgG-O0f8r-tGIJEV-2Z49_rIGX_w</recordid><startdate>19970401</startdate><enddate>19970401</enddate><creator>Kuhara, Y.</creator><creator>Fujimura, Y.</creator><creator>Nishiyama, N.</creator><creator>Michituji, Y.</creator><creator>Terauchi, H.</creator><creator>Yamabayashi, N.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7SP</scope></search><sort><creationdate>19970401</creationdate><title>Characterization and theoretical analysis of second-order intermodulation distortion of InGaAs/InP p-i-n photodiode modules for fiber-optic CATV</title><author>Kuhara, Y. ; Fujimura, Y. ; Nishiyama, N. ; Michituji, Y. ; Terauchi, H. ; Yamabayashi, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-a351a12f9d6b37bd39294e5a3151452528db679903b756ec9b3283aaac93c02f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fiber nonlinear optics</topic><topic>Indium gallium arsenide</topic><topic>Indium phosphide</topic><topic>Intermodulation distortion</topic><topic>Nonlinear optics</topic><topic>Optical distortion</topic><topic>Optical mixing</topic><topic>Optical receivers</topic><topic>Optoelectronic devices</topic><topic>PIN photodiodes</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kuhara, Y.</creatorcontrib><creatorcontrib>Fujimura, Y.</creatorcontrib><creatorcontrib>Nishiyama, N.</creatorcontrib><creatorcontrib>Michituji, Y.</creatorcontrib><creatorcontrib>Terauchi, H.</creatorcontrib><creatorcontrib>Yamabayashi, N.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><jtitle>Journal of lightwave technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kuhara, Y.</au><au>Fujimura, Y.</au><au>Nishiyama, N.</au><au>Michituji, Y.</au><au>Terauchi, H.</au><au>Yamabayashi, N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization and theoretical analysis of second-order intermodulation distortion of InGaAs/InP p-i-n photodiode modules for fiber-optic CATV</atitle><jtitle>Journal of lightwave technology</jtitle><stitle>JLT</stitle><date>1997-04-01</date><risdate>1997</risdate><volume>15</volume><issue>4</issue><spage>636</spage><epage>641</epage><pages>636-641</pages><issn>0733-8724</issn><eissn>1558-2213</eissn><coden>JLTEDG</coden><abstract>InGaAs/InP p-i-n photodiode (PD) modules for fiber-optic analog CATV have been developed. The optical configuration was optimized by making use of a spherical lens aberration. Responsivity and second-order intermodulation distortion (IMD2) were 0.95 A/W and -85 dBc at V/sub r/=12 V, P/sub in/=0 dBm, and m=40%, respectively. The improvement of IMD2 by defocusing was explained by the decrease of incident optical power density calculated by ray tracing. IMD2 was quantitatively explained through the reverse voltage dependence of responsivity which originates from the variation of the p/sup +/-InGaAs depletion layer thickness.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/50.566684</doi><tpages>6</tpages></addata></record> |
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source | IEEE Electronic Library (IEL) |
subjects | Applied sciences Electronics Exact sciences and technology Fiber nonlinear optics Indium gallium arsenide Indium phosphide Intermodulation distortion Nonlinear optics Optical distortion Optical mixing Optical receivers Optoelectronic devices PIN photodiodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Voltage |
title | Characterization and theoretical analysis of second-order intermodulation distortion of InGaAs/InP p-i-n photodiode modules for fiber-optic CATV |
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