Anodic film on lead-arsenic alloy in sulphuric acid medium
The phase composition, anodic behaviour and semiconducting properties of the anodic film on Pb-6 at.% As alloy have been investigated. The linear relationship between I and t exp 1/2 , where I is the anodizing current density and t the anodizing time, shows that the anodic film growth is controlled...
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Veröffentlicht in: | Journal of applied electrochemistry 1994-09, Vol.24 (9), p.894-899 |
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description | The phase composition, anodic behaviour and semiconducting properties of the anodic film on Pb-6 at.% As alloy have been investigated. The linear relationship between I and t exp 1/2 , where I is the anodizing current density and t the anodizing time, shows that the anodic film growth is controlled by a diffusion mechanism. The experimental results show that the anodic film contains t-PbO, PbOmultPbSO sub 4 , 3PbOmultPbSO sub 4 and some As compounds. The dielectric constant of the film is 2.8x10 exp 2 obtained from the capitance-time relationship measured at 2500 Hz. The Mott-Schottky plot shows that the film is an n-type semiconductor. The flat-band potential is -0.56 V vs. Hg/Hg sub 2 SO sub 4 and the donor density is 7.2x10 exp 15 cm exp -3 for the film obtained at 0.9 V vs. Hg/Hg sub 2 SO sub 4 on a Pb-6 at.% As electrode. |
doi_str_mv | 10.1007/BF00348778 |
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The linear relationship between I and t exp 1/2 , where I is the anodizing current density and t the anodizing time, shows that the anodic film growth is controlled by a diffusion mechanism. The experimental results show that the anodic film contains t-PbO, PbOmultPbSO sub 4 , 3PbOmultPbSO sub 4 and some As compounds. The dielectric constant of the film is 2.8x10 exp 2 obtained from the capitance-time relationship measured at 2500 Hz. The Mott-Schottky plot shows that the film is an n-type semiconductor. The flat-band potential is -0.56 V vs. Hg/Hg sub 2 SO sub 4 and the donor density is 7.2x10 exp 15 cm exp -3 for the film obtained at 0.9 V vs. Hg/Hg sub 2 SO sub 4 on a Pb-6 at.% As electrode.</description><identifier>ISSN: 0021-891X</identifier><identifier>EISSN: 1572-8838</identifier><identifier>DOI: 10.1007/BF00348778</identifier><identifier>CODEN: JAELBJ</identifier><language>eng</language><publisher>Heidelberg: Springer</publisher><subject>Chemistry ; Electrochemistry ; Exact sciences and technology ; General and physical chemistry ; Kinetics and mechanism of reactions</subject><ispartof>Journal of applied electrochemistry, 1994-09, Vol.24 (9), p.894-899</ispartof><rights>1995 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c204t-abf4923e53dc758a96df96c9151e695943e7b8fb5d4bc8173fe604361ed6b0603</citedby><cites>FETCH-LOGICAL-c204t-abf4923e53dc758a96df96c9151e695943e7b8fb5d4bc8173fe604361ed6b0603</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3302607$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>XIA, S.-J</creatorcontrib><creatorcontrib>ZHOU, W.-F</creatorcontrib><title>Anodic film on lead-arsenic alloy in sulphuric acid medium</title><title>Journal of applied electrochemistry</title><description>The phase composition, anodic behaviour and semiconducting properties of the anodic film on Pb-6 at.% As alloy have been investigated. The linear relationship between I and t exp 1/2 , where I is the anodizing current density and t the anodizing time, shows that the anodic film growth is controlled by a diffusion mechanism. The experimental results show that the anodic film contains t-PbO, PbOmultPbSO sub 4 , 3PbOmultPbSO sub 4 and some As compounds. The dielectric constant of the film is 2.8x10 exp 2 obtained from the capitance-time relationship measured at 2500 Hz. The Mott-Schottky plot shows that the film is an n-type semiconductor. 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The linear relationship between I and t exp 1/2 , where I is the anodizing current density and t the anodizing time, shows that the anodic film growth is controlled by a diffusion mechanism. The experimental results show that the anodic film contains t-PbO, PbOmultPbSO sub 4 , 3PbOmultPbSO sub 4 and some As compounds. The dielectric constant of the film is 2.8x10 exp 2 obtained from the capitance-time relationship measured at 2500 Hz. The Mott-Schottky plot shows that the film is an n-type semiconductor. The flat-band potential is -0.56 V vs. Hg/Hg sub 2 SO sub 4 and the donor density is 7.2x10 exp 15 cm exp -3 for the film obtained at 0.9 V vs. Hg/Hg sub 2 SO sub 4 on a Pb-6 at.% As electrode.</abstract><cop>Heidelberg</cop><pub>Springer</pub><doi>10.1007/BF00348778</doi><tpages>6</tpages></addata></record> |
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title | Anodic film on lead-arsenic alloy in sulphuric acid medium |
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