Mid-infrared HgTe Colloidal Quantum Dot LEDs
Mid-infrared HgTe colloidal quantum dot electroluminescent devices are demonstrated. With emission at 4 μm, devices achieved an external quantum efficiency of ∼10–3 and power conversion efficiency of ∼10–4 under biases of a few volts. The power conversion efficiency benefited from lowering the trans...
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| Veröffentlicht in: | ACS nano 2022-05, Vol.16 (5), p.7301-7308 |
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| creator | Shen, Xingyu Peterson, John C. Guyot-Sionnest, Philippe |
| description | Mid-infrared HgTe colloidal quantum dot electroluminescent devices are demonstrated. With emission at 4 μm, devices achieved an external quantum efficiency of ∼10–3 and power conversion efficiency of ∼10–4 under biases of a few volts. The power conversion efficiency benefited from lowering the transparent electrode resistance through the incorporation of a metal conductive grid. The average power emitted was about 16 μW at 2 V bias with 50% duty cycle and a 1 mm2 device. The room-temperature electroluminescence efficiency at low current was limited by the photoluminescence efficiency of the quantum dots, while the diode structure provided efficient electron–hole recombination. |
| doi_str_mv | 10.1021/acsnano.2c01694 |
| format | Article |
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| title | Mid-infrared HgTe Colloidal Quantum Dot LEDs |
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