Multiple-layer optical interconnections using through-wafer hollow-dielectric-waveguide vias

We investigate lossy hollow-dielectric-waveguide vias in a dense optical interconnection system as a means by which many 2-D processor layers can communicate simultaneously with minimal signal attenuation. Via-guided multiple-layer signal attenuation and design guidelines are derived for both GaAs a...

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Veröffentlicht in:	IEEE photonics technology letters 1994-07, Vol.6 (7), p.851-854
Hauptverfasser:	Norte, A.D., Willner, A.E., Shieh, W., Tanguay, A.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Applied sciences Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gallium arsenide High speed optical techniques Optical attenuators Optical interconnections Optical propagation Optical waveguides Power system interconnection Surface emitting lasers Vertical cavity surface emitting lasers
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container_end_page	854
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container_title	IEEE photonics technology letters
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creator	Norte, A.D. Willner, A.E. Shieh, W. Tanguay, A.R.
description	We investigate lossy hollow-dielectric-waveguide vias in a dense optical interconnection system as a means by which many 2-D processor layers can communicate simultaneously with minimal signal attenuation. Via-guided multiple-layer signal attenuation and design guidelines are derived for both GaAs and Si substrate materials, and are compared to those for unguided interconnections at 0.85 μm and 1.3 μm. We find that optical interconnections using hollow-dielectric-waveguide vias can support dense low-loss interconnections at 0.85 μm, whereas propagation through the substrate is preferred at 1.3 μm.
doi_str_mv	10.1109/68.311476
format	Article
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Via-guided multiple-layer signal attenuation and design guidelines are derived for both GaAs and Si substrate materials, and are compared to those for unguided interconnections at 0.85 μm and 1.3 μm. We find that optical interconnections using hollow-dielectric-waveguide vias can support dense low-loss interconnections at 0.85 μm, whereas propagation through the substrate is preferred at 1.3 μm.</description><subject>Absorption</subject><subject>Applied sciences</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>High speed optical techniques</subject><subject>Optical attenuators</subject><subject>Optical interconnections</subject><subject>Optical propagation</subject><subject>Optical waveguides</subject><subject>Power system interconnection</subject><subject>Surface emitting lasers</subject><subject>Vertical cavity surface emitting lasers</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNqF0D1PwzAQBuAIgUQpDKxMGRASQ4rPcZx4RBVfEogFNqTIcc6tkRsXO2nVf49RKhiZfPI99w5vkpwDmQEQccOrWQ7ASn6QTEAwyAiU7DDOJM4AeXGcnITwSQiwImeT5ONlsL1ZW8ys3KFP3bo3StrUdD165boOVW9cF9IhmG6R9kvvhsUy20od8dJZ67ZZa9BG5o2K_xtcDKbFdGNkOE2OtLQBz_bvNHm_v3ubP2bPrw9P89vnTNGC9lmrAVpRCkRONTaUV1yoBoXSigNlyBstmqKhWgiat1pKrIBBA63ipRQE82lyNeauvfsaMPT1ygSF1soO3RBqWuUVoZT8DzkraFHSCK9HqLwLwaOu196spN_VQOqfomte1WPR0V7uQ2WI1WkvO2XC70HOaClEHtnFyAwi_m3HjG8kw4e4</recordid><startdate>19940701</startdate><enddate>19940701</enddate><creator>Norte, A.D.</creator><creator>Willner, A.E.</creator><creator>Shieh, W.</creator><creator>Tanguay, A.R.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>19940701</creationdate><title>Multiple-layer optical interconnections using through-wafer hollow-dielectric-waveguide vias</title><author>Norte, A.D. ; Willner, A.E. ; Shieh, W. ; Tanguay, A.R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c252t-df11d979ee62feb26869cbe9cfc6124e6bf9b5b2f9923dfaae8141b1dc67a90e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Absorption</topic><topic>Applied sciences</topic><topic>Electronic equipment and fabrication. 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subjects	Absorption Applied sciences Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gallium arsenide High speed optical techniques Optical attenuators Optical interconnections Optical propagation Optical waveguides Power system interconnection Surface emitting lasers Vertical cavity surface emitting lasers
title	Multiple-layer optical interconnections using through-wafer hollow-dielectric-waveguide vias
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