Carrier Trapping in Wrinkled 2D Monolayer MoS2 for Ultrathin Memory

Atomically thin two-dimensional (2D) semiconductors are promising for next-generation memory to meet the scaling down of semiconductor industry. However, the controllability of carrier trapping status, which is the key figure of merit for memory devices, still halts the application of 2D semiconduct...

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Veröffentlicht in:	ACS nano 2022-04, Vol.16 (4), p.6309-6316
Hauptverfasser:	Zhang, Rongjie, Lai, Yongjue, Chen, Wenjun, Teng, Changjiu, Sun, Yujie, Yang, Liusi, Wang, Jingyun, Liu, Bilu, Cheng, Hui-Ming
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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