Gating Orbital Memory with an Atomic Donor

Gating Orbital Memory with an Atomic Donor

Orbital memory is defined by two stable valencies that can be electrically switched and read out. To explore the influence of an electric field on orbital memory, we studied the distance-dependent influence of an atomic Cu donor on the state favorability of an individual Co atom on black phosphorus....

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Veröffentlicht in:Physical review letters 2022-03, Vol.128 (10), p.106801-106801, Article 106801
Hauptverfasser: Knol, Elze J, Kiraly, Brian, Rudenko, Alexander N, van Weerdenburg, Werner M J, Katsnelson, Mikhail I, Khajetoorians, Alexander A
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container_title Physical review letters
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creator Knol, Elze J
Kiraly, Brian
Rudenko, Alexander N
van Weerdenburg, Werner M J
Katsnelson, Mikhail I
Khajetoorians, Alexander A
description Orbital memory is defined by two stable valencies that can be electrically switched and read out. To explore the influence of an electric field on orbital memory, we studied the distance-dependent influence of an atomic Cu donor on the state favorability of an individual Co atom on black phosphorus. Using low temperature scanning tunneling microscopy and spectroscopy, we characterized the electronic properties of individual Cu donors, corroborating this behavior with ab initio calculations based on density functional theory. We studied the influence of an individual donor on the charging energy and stochastic behavior of an individual Co atom. We found a strong impact on the state favorability in the stochastic limit. These findings provide quantitative information about the influence of local electric fields on atomic orbital memory.
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title Gating Orbital Memory with an Atomic Donor
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