Visible and infrared (1.54 μm) emission from Er-implanted porous Si for photonic applications
This paper explores the challenges faced in developing efficient room temperature porous Si-based light emitting diodes. We experimentally demonstrate that porous Si is an excellent host material for erbium ions to emit strong, room temperature, sharp-line luminescence at 1.54 mu m. A comparison of...
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| Veröffentlicht in: | Journal of electronic materials 1996, Vol.25 (1), p.43-49 |
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| container_end_page | 49 |
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| container_issue | 1 |
| container_start_page | 43 |
| container_title | Journal of electronic materials |
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| creator | FEREYDOON NAMAVAR FENG LU PERRY, C. H CREMINS, A NADER KALKHORAN SOREF, R. A |
| description | This paper explores the challenges faced in developing efficient room temperature porous Si-based light emitting diodes. We experimentally demonstrate that porous Si is an excellent host material for erbium ions to emit strong, room temperature, sharp-line luminescence at 1.54 mu m. A comparison of photoluminescene data for erbium implanted samples of bulk Si, porous Si, and quartz indicate that quantum confinement likely enhances the erbium IR luminescene efficiency. Due to the 650 to 850 degree C annealing, it is unlikely that the environment of erbium in our samples is amorphous Si. |
| doi_str_mv | 10.1007/BF02666172 |
| format | Article |
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H ; CREMINS, A ; NADER KALKHORAN ; SOREF, R. A</creator><creatorcontrib>FEREYDOON NAMAVAR ; FENG LU ; PERRY, C. H ; CREMINS, A ; NADER KALKHORAN ; SOREF, R. A</creatorcontrib><description>This paper explores the challenges faced in developing efficient room temperature porous Si-based light emitting diodes. We experimentally demonstrate that porous Si is an excellent host material for erbium ions to emit strong, room temperature, sharp-line luminescence at 1.54 mu m. A comparison of photoluminescene data for erbium implanted samples of bulk Si, porous Si, and quartz indicate that quantum confinement likely enhances the erbium IR luminescene efficiency. 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A</creatorcontrib><title>Visible and infrared (1.54 μm) emission from Er-implanted porous Si for photonic applications</title><title>Journal of electronic materials</title><description>This paper explores the challenges faced in developing efficient room temperature porous Si-based light emitting diodes. We experimentally demonstrate that porous Si is an excellent host material for erbium ions to emit strong, room temperature, sharp-line luminescence at 1.54 mu m. A comparison of photoluminescene data for erbium implanted samples of bulk Si, porous Si, and quartz indicate that quantum confinement likely enhances the erbium IR luminescene efficiency. Due to the 650 to 850 degree C annealing, it is unlikely that the environment of erbium in our samples is amorphous Si.</description><subject>Applied sciences</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Light-emitting devices</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optoelectronic devices</subject><subject>Other solid inorganic materials</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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A</creator><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>1996</creationdate><title>Visible and infrared (1.54 μm) emission from Er-implanted porous Si for photonic applications</title><author>FEREYDOON NAMAVAR ; FENG LU ; PERRY, C. H ; CREMINS, A ; NADER KALKHORAN ; SOREF, R. 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Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>FEREYDOON NAMAVAR</creatorcontrib><creatorcontrib>FENG LU</creatorcontrib><creatorcontrib>PERRY, C. H</creatorcontrib><creatorcontrib>CREMINS, A</creatorcontrib><creatorcontrib>NADER KALKHORAN</creatorcontrib><creatorcontrib>SOREF, R. A</creatorcontrib><collection>Pascal-Francis</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>FEREYDOON NAMAVAR</au><au>FENG LU</au><au>PERRY, C. H</au><au>CREMINS, A</au><au>NADER KALKHORAN</au><au>SOREF, R. A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Visible and infrared (1.54 μm) emission from Er-implanted porous Si for photonic applications</atitle><jtitle>Journal of electronic materials</jtitle><date>1996</date><risdate>1996</risdate><volume>25</volume><issue>1</issue><spage>43</spage><epage>49</epage><pages>43-49</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>This paper explores the challenges faced in developing efficient room temperature porous Si-based light emitting diodes. We experimentally demonstrate that porous Si is an excellent host material for erbium ions to emit strong, room temperature, sharp-line luminescence at 1.54 mu m. A comparison of photoluminescene data for erbium implanted samples of bulk Si, porous Si, and quartz indicate that quantum confinement likely enhances the erbium IR luminescene efficiency. Due to the 650 to 850 degree C annealing, it is unlikely that the environment of erbium in our samples is amorphous Si.</abstract><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1007/BF02666172</doi><tpages>7</tpages></addata></record> |
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| ispartof | Journal of electronic materials, 1996, Vol.25 (1), p.43-49 |
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| language | eng |
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| source | SpringerLink (Online service) |
| subjects | Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronics Exact sciences and technology Light-emitting devices Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optoelectronic devices Other solid inorganic materials Photoluminescence Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Visible and infrared (1.54 μm) emission from Er-implanted porous Si for photonic applications |
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