Growth of oriented aluminium nitride films on silicon by chemical vapour deposition
The properties of the films were studied by SEM, atomic force microscope (AFM) measurements, XRD and Raman scattering. The resulting films were strongly textured and had a preferential orientation with the c-axis normal to the surface. The Raman spectra showed two peaks at 607 and 653 cm-1 and two l...
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| Veröffentlicht in: | Journal of materials science 1994-01, Vol.29 (16), p.4314-4318 |
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| container_end_page | 4318 |
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| container_issue | 16 |
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| container_title | Journal of materials science |
| container_volume | 29 |
| creator | KHAN, A. H ODEH, M. F MEESE, J. M CHARLSON, E. M CHARLSON, E. J STACY, T POPOVICI, G PRELAS, M. A WRAGG, J. L |
| description | The properties of the films were studied by SEM, atomic force microscope (AFM) measurements, XRD and Raman scattering. The resulting films were strongly textured and had a preferential orientation with the c-axis normal to the surface. The Raman spectra showed two peaks at 607 and 653 cm-1 and two large bands at 750 and 900 cm-1 of smaller intensity. Both the macro- and micro-Raman spectra showed the same peaks. 19 refs. |
| doi_str_mv | 10.1007/BF00414216 |
| format | Article |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Infrared and raman spectra and scattering Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other nonmetallic inorganics Physics |
| title | Growth of oriented aluminium nitride films on silicon by chemical vapour deposition |
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