Strain accommodation in mismatched layers by molecular beam epitaxy : Introduction of a new compliant substrate technology
Compliant substrates allow a new approach to the growth of strained epitaxial layers, in which part of the strain is accommodated in the substrate. In this article, compliant substrates are discussed and a new compliant substrate technology based on bonded thin film substrates is introduced. This te...
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Veröffentlicht in: | Journal of electronic materials 1996-07, Vol.25 (7), p.1044-1048 |
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creator | CARTER-COMAN, C BROWN, A. S JOKERST, N. M DAWSON, D. E BICKNELL-TASSIUS, R FENG, Z. C RAJKUMAR, K. C DAGNALL, G |
description | Compliant substrates allow a new approach to the growth of strained epitaxial layers, in which part of the strain is accommodated in the substrate. In this article, compliant substrates are discussed and a new compliant substrate technology based on bonded thin film substrates is introduced. This technology has several advantages over previously published methods, including the ability to pattern both the top and bottom of the material. A new concept enabled by this compliant substrate technology, strain-modulated epitaxy, will be introduced. Using this technique, the properties of the semiconductor material can be controlled laterally across a substrate. Results of two experiments are presented in which low composition In^sub x^Ga^sub 1-x^As was grown by molecular beam epitaxy on GaAs compliant substrates at thicknesses both greater than and less than the conventional critical thickness. It was found that for t > t^sub c^, there was an inhibition of defect production in the epitaxial films grown on the compliant substrates as compared to those grown on conventional reference substrates. For t < t^sub c^, photoluminescence and x-ray diffraction show the compliant substrates to be of excellent quality and uniformity as compared to conventional substrates. [PUBLICATION ABSTRACT] |
doi_str_mv | 10.1007/BF02659900 |
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S ; JOKERST, N. M ; DAWSON, D. E ; BICKNELL-TASSIUS, R ; FENG, Z. C ; RAJKUMAR, K. C ; DAGNALL, G</creator><creatorcontrib>CARTER-COMAN, C ; BROWN, A. S ; JOKERST, N. M ; DAWSON, D. E ; BICKNELL-TASSIUS, R ; FENG, Z. C ; RAJKUMAR, K. C ; DAGNALL, G</creatorcontrib><description>Compliant substrates allow a new approach to the growth of strained epitaxial layers, in which part of the strain is accommodated in the substrate. In this article, compliant substrates are discussed and a new compliant substrate technology based on bonded thin film substrates is introduced. This technology has several advantages over previously published methods, including the ability to pattern both the top and bottom of the material. A new concept enabled by this compliant substrate technology, strain-modulated epitaxy, will be introduced. Using this technique, the properties of the semiconductor material can be controlled laterally across a substrate. Results of two experiments are presented in which low composition In^sub x^Ga^sub 1-x^As was grown by molecular beam epitaxy on GaAs compliant substrates at thicknesses both greater than and less than the conventional critical thickness. It was found that for t > t^sub c^, there was an inhibition of defect production in the epitaxial films grown on the compliant substrates as compared to those grown on conventional reference substrates. For t < t^sub c^, photoluminescence and x-ray diffraction show the compliant substrates to be of excellent quality and uniformity as compared to conventional substrates. [PUBLICATION ABSTRACT]</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/BF02659900</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Gallium arsenide ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Molecular beam epitaxy ; Molecular, atomic, ion, and chemical beam epitaxy ; Physics ; Semiconductor research ; Substrates ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Journal of electronic materials, 1996-07, Vol.25 (7), p.1044-1048</ispartof><rights>1996 INIST-CNRS</rights><rights>Copyright Minerals, Metals & Materials Society Jul 1996</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-81e2913b96734452d4d93eb3468f52b74c58edb28acee04021b673a4ae2029273</citedby><cites>FETCH-LOGICAL-c316t-81e2913b96734452d4d93eb3468f52b74c58edb28acee04021b673a4ae2029273</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,23930,23931,25140,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3125232$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>CARTER-COMAN, C</creatorcontrib><creatorcontrib>BROWN, A. 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A new concept enabled by this compliant substrate technology, strain-modulated epitaxy, will be introduced. Using this technique, the properties of the semiconductor material can be controlled laterally across a substrate. Results of two experiments are presented in which low composition In^sub x^Ga^sub 1-x^As was grown by molecular beam epitaxy on GaAs compliant substrates at thicknesses both greater than and less than the conventional critical thickness. It was found that for t > t^sub c^, there was an inhibition of defect production in the epitaxial films grown on the compliant substrates as compared to those grown on conventional reference substrates. For t < t^sub c^, photoluminescence and x-ray diffraction show the compliant substrates to be of excellent quality and uniformity as compared to conventional substrates. 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S</au><au>JOKERST, N. M</au><au>DAWSON, D. E</au><au>BICKNELL-TASSIUS, R</au><au>FENG, Z. C</au><au>RAJKUMAR, K. C</au><au>DAGNALL, G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Strain accommodation in mismatched layers by molecular beam epitaxy : Introduction of a new compliant substrate technology</atitle><jtitle>Journal of electronic materials</jtitle><date>1996-07-01</date><risdate>1996</risdate><volume>25</volume><issue>7</issue><spage>1044</spage><epage>1048</epage><pages>1044-1048</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>Compliant substrates allow a new approach to the growth of strained epitaxial layers, in which part of the strain is accommodated in the substrate. In this article, compliant substrates are discussed and a new compliant substrate technology based on bonded thin film substrates is introduced. This technology has several advantages over previously published methods, including the ability to pattern both the top and bottom of the material. A new concept enabled by this compliant substrate technology, strain-modulated epitaxy, will be introduced. Using this technique, the properties of the semiconductor material can be controlled laterally across a substrate. Results of two experiments are presented in which low composition In^sub x^Ga^sub 1-x^As was grown by molecular beam epitaxy on GaAs compliant substrates at thicknesses both greater than and less than the conventional critical thickness. It was found that for t > t^sub c^, there was an inhibition of defect production in the epitaxial films grown on the compliant substrates as compared to those grown on conventional reference substrates. For t < t^sub c^, photoluminescence and x-ray diffraction show the compliant substrates to be of excellent quality and uniformity as compared to conventional substrates. [PUBLICATION ABSTRACT]</abstract><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1007/BF02659900</doi><tpages>5</tpages></addata></record> |
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subjects | Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Gallium arsenide Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular beam epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Semiconductor research Substrates Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
title | Strain accommodation in mismatched layers by molecular beam epitaxy : Introduction of a new compliant substrate technology |
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