Double-drift avalanche photodetectors

A new avalanche photodiode device is proposed that has superior noise and bandwidth performance. This structure incorporates a drift region on both sides of the high field avalanche region. With the proper design, this reduces the capacitance by nearly a factor of two, without degrading the transit-...

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Veröffentlicht in:	IEEE transactions on electron devices 1994-12, Vol.41 (12), p.2301-2304
Hauptverfasser:	De Loach, B.C., Hollenhorst, J.N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Avalanche photodiodes Bandwidth Capacitance Circuit noise Degradation Electronics Exact sciences and technology Frequency Optical resonators Optical waveguides Optoelectronic devices Photoconductivity Photodetectors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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