Upconversion under Photon Trapping in ZnO/BN Nanoarray: An Ultrahigh Responsivity Solar‐Blind Photodetecting Paper

Solar‐blind photodetectors (PDs) are widely applicable in special, military, medical, environmental, and commercial fields. However, high performance and flexible PD for deep ultraviolet (UV) range is still a challenge. Here, it is demonstrated that an upconversion of photon absorption beyond the en...

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Hauptverfasser: Liu, Guozhen, Chen, Han, Lu, Shiqiang, Liu, Lian, Xu, Xiangyu, Shi, Lan, Chen, Binghuan, Guo, Bin, Shen, Peng, Cai, Yehang, Zhang, Hongye, Tang, Yan, Soomro, Abdul Majid, Xu, Feiya, Chen, Xiaohong, Zheng, Tongchang, Li, Jing, Li, Shuping, Cai, Duanjun, Kang, Junyong
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container_issue 22
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container_title Small (Weinheim an der Bergstrasse, Germany)
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creator Liu, Guozhen
Chen, Han
Lu, Shiqiang
Liu, Lian
Xu, Xiangyu
Shi, Lan
Chen, Binghuan
Guo, Bin
Shen, Peng
Cai, Yehang
Zhang, Hongye
Tang, Yan
Soomro, Abdul Majid
Xu, Feiya
Chen, Xiaohong
Zheng, Tongchang
Li, Jing
Li, Shuping
Cai, Duanjun
Kang, Junyong
description Solar‐blind photodetectors (PDs) are widely applicable in special, military, medical, environmental, and commercial fields. However, high performance and flexible PD for deep ultraviolet (UV) range is still a challenge. Here, it is demonstrated that an upconversion of photon absorption beyond the energy bandgap is achieved in the ZnO nanoarray/h‐BN heterostructure, which enables the ultrahigh responsivity of a solar‐blind photodetecting paper. The direct growth of ultralong ZnO nanoarray on polycrystalline copper paper induced by h‐BN 2D interlayer is obtained. Meanwhile, strong photon trapping takes place within the ZnO nanoarray forest through the cyclic state transition of surface oxygen ions, resulting in an extremely high absorption efficiency (> 99.5%). A flexible photodetecting paper is fabricated for switchable detections between near UV and deep UV signals by critical external bias. The device shows robust reliability, ultrahigh responsivity up to 700 A W−1 @ 265–276 nm, and high photoconductive gain of ≈2 × 103. A negative differential resistance effect is revealed for driving the rapid transfer of up‐converted electrons between adjacent energy valleys (Γ to A) above the critical bias (3.9 V). The discovered rationale and device structure are expected to bring high‐efficiency deep UV detecting and future wearable applications. A solar‐blind photodetecting paper based on ZnO nanoarray and 2D h‐BN interlayer is developed with ultrahigh responsivity up to 700 A W−1 @ 265–276 nm and switchable detection bands between UVA (>315 nm) and UVC (
doi_str_mv 10.1002/smll.202200563
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However, high performance and flexible PD for deep ultraviolet (UV) range is still a challenge. Here, it is demonstrated that an upconversion of photon absorption beyond the energy bandgap is achieved in the ZnO nanoarray/h‐BN heterostructure, which enables the ultrahigh responsivity of a solar‐blind photodetecting paper. The direct growth of ultralong ZnO nanoarray on polycrystalline copper paper induced by h‐BN 2D interlayer is obtained. Meanwhile, strong photon trapping takes place within the ZnO nanoarray forest through the cyclic state transition of surface oxygen ions, resulting in an extremely high absorption efficiency (&gt; 99.5%). A flexible photodetecting paper is fabricated for switchable detections between near UV and deep UV signals by critical external bias. The device shows robust reliability, ultrahigh responsivity up to 700 A W−1 @ 265–276 nm, and high photoconductive gain of ≈2 × 103. A negative differential resistance effect is revealed for driving the rapid transfer of up‐converted electrons between adjacent energy valleys (Γ to A) above the critical bias (3.9 V). The discovered rationale and device structure are expected to bring high‐efficiency deep UV detecting and future wearable applications. A solar‐blind photodetecting paper based on ZnO nanoarray and 2D h‐BN interlayer is developed with ultrahigh responsivity up to 700 A W−1 @ 265–276 nm and switchable detection bands between UVA (&gt;315 nm) and UVC (&lt;280 nm), through up‐conversion absorption and negative differential resistance effect.</description><identifier>ISSN: 1613-6810</identifier><identifier>EISSN: 1613-6829</identifier><identifier>DOI: 10.1002/smll.202200563</identifier><identifier>PMID: 35289505</identifier><language>eng</language><publisher>Germany: Wiley Subscription Services, Inc</publisher><subject>Bias ; Energy gap ; Extreme values ; Heterostructures ; hexagonal boron nitride ; high responsivity ; Interlayers ; Nanotechnology ; negative differential resistance ; Oxygen ions ; Photon absorption ; Photons ; Photovoltaic cells ; Reproducibility of Results ; solar‐blind ultraviolet photodetectors ; Sunlight ; Trapping ; Ultraviolet Rays ; Upconversion ; Zinc oxide ; Zinc Oxide - chemistry ; ZnO nanoarrays</subject><ispartof>Small (Weinheim an der Bergstrasse, Germany), 2022-06, Vol.18 (22), p.e2200563-n/a</ispartof><rights>2022 Wiley‐VCH GmbH</rights><rights>2022 Wiley-VCH GmbH.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3733-273ef3e376f1601c49b552a10b1304570b1ee349d78a01cb9f5dce22712958823</citedby><cites>FETCH-LOGICAL-c3733-273ef3e376f1601c49b552a10b1304570b1ee349d78a01cb9f5dce22712958823</cites><orcidid>0000-0002-7094-7799</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fsmll.202200563$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fsmll.202200563$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/35289505$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Liu, Guozhen</creatorcontrib><creatorcontrib>Chen, Han</creatorcontrib><creatorcontrib>Lu, Shiqiang</creatorcontrib><creatorcontrib>Liu, Lian</creatorcontrib><creatorcontrib>Xu, Xiangyu</creatorcontrib><creatorcontrib>Shi, Lan</creatorcontrib><creatorcontrib>Chen, Binghuan</creatorcontrib><creatorcontrib>Guo, Bin</creatorcontrib><creatorcontrib>Shen, Peng</creatorcontrib><creatorcontrib>Cai, Yehang</creatorcontrib><creatorcontrib>Zhang, Hongye</creatorcontrib><creatorcontrib>Tang, Yan</creatorcontrib><creatorcontrib>Soomro, Abdul Majid</creatorcontrib><creatorcontrib>Xu, Feiya</creatorcontrib><creatorcontrib>Chen, Xiaohong</creatorcontrib><creatorcontrib>Zheng, Tongchang</creatorcontrib><creatorcontrib>Li, Jing</creatorcontrib><creatorcontrib>Li, Shuping</creatorcontrib><creatorcontrib>Cai, Duanjun</creatorcontrib><creatorcontrib>Kang, Junyong</creatorcontrib><title>Upconversion under Photon Trapping in ZnO/BN Nanoarray: An Ultrahigh Responsivity Solar‐Blind Photodetecting Paper</title><title>Small (Weinheim an der Bergstrasse, Germany)</title><addtitle>Small</addtitle><description>Solar‐blind photodetectors (PDs) are widely applicable in special, military, medical, environmental, and commercial fields. 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However, high performance and flexible PD for deep ultraviolet (UV) range is still a challenge. Here, it is demonstrated that an upconversion of photon absorption beyond the energy bandgap is achieved in the ZnO nanoarray/h‐BN heterostructure, which enables the ultrahigh responsivity of a solar‐blind photodetecting paper. The direct growth of ultralong ZnO nanoarray on polycrystalline copper paper induced by h‐BN 2D interlayer is obtained. Meanwhile, strong photon trapping takes place within the ZnO nanoarray forest through the cyclic state transition of surface oxygen ions, resulting in an extremely high absorption efficiency (&gt; 99.5%). A flexible photodetecting paper is fabricated for switchable detections between near UV and deep UV signals by critical external bias. The device shows robust reliability, ultrahigh responsivity up to 700 A W−1 @ 265–276 nm, and high photoconductive gain of ≈2 × 103. A negative differential resistance effect is revealed for driving the rapid transfer of up‐converted electrons between adjacent energy valleys (Γ to A) above the critical bias (3.9 V). The discovered rationale and device structure are expected to bring high‐efficiency deep UV detecting and future wearable applications. A solar‐blind photodetecting paper based on ZnO nanoarray and 2D h‐BN interlayer is developed with ultrahigh responsivity up to 700 A W−1 @ 265–276 nm and switchable detection bands between UVA (&gt;315 nm) and UVC (&lt;280 nm), through up‐conversion absorption and negative differential resistance effect.</abstract><cop>Germany</cop><pub>Wiley Subscription Services, Inc</pub><pmid>35289505</pmid><doi>10.1002/smll.202200563</doi><tpages>14</tpages><orcidid>https://orcid.org/0000-0002-7094-7799</orcidid></addata></record>
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source MEDLINE; Wiley Online Library Journals Frontfile Complete
subjects Bias
Energy gap
Extreme values
Heterostructures
hexagonal boron nitride
high responsivity
Interlayers
Nanotechnology
negative differential resistance
Oxygen ions
Photon absorption
Photons
Photovoltaic cells
Reproducibility of Results
solar‐blind ultraviolet photodetectors
Sunlight
Trapping
Ultraviolet Rays
Upconversion
Zinc oxide
Zinc Oxide - chemistry
ZnO nanoarrays
title Upconversion under Photon Trapping in ZnO/BN Nanoarray: An Ultrahigh Responsivity Solar‐Blind Photodetecting Paper
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