Effect of Nitridation on the Electrical Properties of Tungsten-Titanium Resistors

The electrical properties of tungsten-titanium (W:Ti) thin film resistors sputtered in an argon-nitrogen atmosphere were investigated. The resistivity rho and the thermal coefficient of resistivity alpha were calculated as a function of film thickness and N content. A bulk resistivity of 70 plus/min...

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Veröffentlicht in:	Journal of electronic materials 1994-10, Vol.23 (10), p.1067-1070
Hauptverfasser:	Lisicka-Skrzek, E, Coyne, W, Millar, G, Berolo, O
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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