Room temperature photoluminescence studies of δ-doped pseudomorphic high electron mobility transistor AlGaAs/InGaAs/GaAs structures

We report the room temperature characteristics of photoluminescence emission in δ-doped pseudomorphic high electron mobility transistor AlGaAs/InGaAs/GaAs structures. A theoretical self-consistent calculation of band structure demonstrates that dominant emissions are due to the transition from the s...

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Veröffentlicht in:	Solid state communications 1996, Vol.99 (10), p.713-716
Hauptverfasser:	Lu, Wu, Lee, Jin-Hee, Yoon, Hyung-Sup, Park, Chul-Soon, Pyun, Kwang-Eui, Lee, Hae-Gwon, Suh, Kyung-Soo, Jogai, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	A. quantum wells B. epitaxy Condensed matter: electronic structure, electrical, magnetic, and optical properties D. electronic band structure D. optical properties E. luminescence Exact sciences and technology Iii-v semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics
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