Crystallographic texture change during abnormal grain growth in Cu-Co thin films

The addition of 0.4–8.6 at. % Co to Cu thin films strongly influences the temperature evolution of microstructure, stress, and resistivity. For concentrations near 1 at. % Co in coevaporated Cu-Co on oxidized Si, normal grain growth begins at about 75 °C, about 50 °C lower than in pure Cu. There is...

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Veröffentlicht in:	Applied physics letters 1994-07, Vol.65 (2), p.177-179
Hauptverfasser:	Harper, J. M. E., Gupta, J., Smith, D. A., Chang, J. W., Holloway, K. L., Cabral, C., Tracy, D. P., Knorr, D. B.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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