Controllable Synthesis of Narrow-Gap van der Waals Semiconductor Nb2GeTe4 with Asymmetric Architecture for Ultrafast Photonics
Ultrafast photonics has become an interdisciplinary topic of great consequence due to the spectacular progress of compact and efficient ultrafast pulse generation. Wide spectrum bandwidth is the key element for ultrafast pulse generation due to the Fourier transform limitation. Herein, monoclinic Nb...
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Veröffentlicht in: | ACS nano 2022-03, Vol.16 (3), p.4239-4250 |
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creator | Dai, Yongping Yu, Qiang Yang, Xiaoxin Guo, Kun Zhang, Yan Zhang, Yushuang Zhang, Junrong Li, Jie Chen, Jie Deng, Haiqin Xian, Tianhao Wang, Xiao Wu, Jian Zhang, Kai |
description | Ultrafast photonics has become an interdisciplinary topic of great consequence due to the spectacular progress of compact and efficient ultrafast pulse generation. Wide spectrum bandwidth is the key element for ultrafast pulse generation due to the Fourier transform limitation. Herein, monoclinic Nb2GeTe4, an emerging class of ternary narrow-gap semiconductors, was used as a real saturable absorber (SA), which manifests superior wide-range optical absorption. The crystallization form and growth mechanism of Nb2GeTe4 were revealed by a thermodynamic phase diagram. Furthermore, the Nb2GeTe4–SA showed reliable saturation intensity and larger modulation depth, ascribed to a built-in electric field driven by the asymmetric crystal architecture confirmed via X-ray diffraction, polarized Raman spectra, and scanning transmission electron microscopy. Based on the Nb2GeTe4–SA, femtosecond mode-locked operation with good overall performance was achieved by a properly designed ring cavity. These results suggest that Nb2GeTe4 shows great promise for ultrafast photonic applications and arouse interests in exploring the intriguing properties of the ternary van der Waals material family. |
doi_str_mv | 10.1021/acsnano.1c10241 |
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Wide spectrum bandwidth is the key element for ultrafast pulse generation due to the Fourier transform limitation. Herein, monoclinic Nb2GeTe4, an emerging class of ternary narrow-gap semiconductors, was used as a real saturable absorber (SA), which manifests superior wide-range optical absorption. The crystallization form and growth mechanism of Nb2GeTe4 were revealed by a thermodynamic phase diagram. Furthermore, the Nb2GeTe4–SA showed reliable saturation intensity and larger modulation depth, ascribed to a built-in electric field driven by the asymmetric crystal architecture confirmed via X-ray diffraction, polarized Raman spectra, and scanning transmission electron microscopy. Based on the Nb2GeTe4–SA, femtosecond mode-locked operation with good overall performance was achieved by a properly designed ring cavity. These results suggest that Nb2GeTe4 shows great promise for ultrafast photonic applications and arouse interests in exploring the intriguing properties of the ternary van der Waals material family.</description><identifier>ISSN: 1936-0851</identifier><identifier>EISSN: 1936-086X</identifier><identifier>DOI: 10.1021/acsnano.1c10241</identifier><language>eng</language><publisher>American Chemical Society</publisher><ispartof>ACS nano, 2022-03, Vol.16 (3), p.4239-4250</ispartof><rights>2022 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-4251-9412 ; 0000-0001-9378-0947 ; 0000-0003-3747-7358</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acsnano.1c10241$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acsnano.1c10241$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,27076,27924,27925,56738,56788</link.rule.ids></links><search><creatorcontrib>Dai, Yongping</creatorcontrib><creatorcontrib>Yu, Qiang</creatorcontrib><creatorcontrib>Yang, Xiaoxin</creatorcontrib><creatorcontrib>Guo, Kun</creatorcontrib><creatorcontrib>Zhang, Yan</creatorcontrib><creatorcontrib>Zhang, Yushuang</creatorcontrib><creatorcontrib>Zhang, Junrong</creatorcontrib><creatorcontrib>Li, Jie</creatorcontrib><creatorcontrib>Chen, Jie</creatorcontrib><creatorcontrib>Deng, Haiqin</creatorcontrib><creatorcontrib>Xian, Tianhao</creatorcontrib><creatorcontrib>Wang, Xiao</creatorcontrib><creatorcontrib>Wu, Jian</creatorcontrib><creatorcontrib>Zhang, Kai</creatorcontrib><title>Controllable Synthesis of Narrow-Gap van der Waals Semiconductor Nb2GeTe4 with Asymmetric Architecture for Ultrafast Photonics</title><title>ACS nano</title><addtitle>ACS Nano</addtitle><description>Ultrafast photonics has become an interdisciplinary topic of great consequence due to the spectacular progress of compact and efficient ultrafast pulse generation. Wide spectrum bandwidth is the key element for ultrafast pulse generation due to the Fourier transform limitation. Herein, monoclinic Nb2GeTe4, an emerging class of ternary narrow-gap semiconductors, was used as a real saturable absorber (SA), which manifests superior wide-range optical absorption. The crystallization form and growth mechanism of Nb2GeTe4 were revealed by a thermodynamic phase diagram. Furthermore, the Nb2GeTe4–SA showed reliable saturation intensity and larger modulation depth, ascribed to a built-in electric field driven by the asymmetric crystal architecture confirmed via X-ray diffraction, polarized Raman spectra, and scanning transmission electron microscopy. Based on the Nb2GeTe4–SA, femtosecond mode-locked operation with good overall performance was achieved by a properly designed ring cavity. These results suggest that Nb2GeTe4 shows great promise for ultrafast photonic applications and arouse interests in exploring the intriguing properties of the ternary van der Waals material family.</description><issn>1936-0851</issn><issn>1936-086X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNo9kMFLwzAUh4soOKdnrzkK0pm0Tdsdx9ApjClsorfykr7QjjaZSerYxb_dyIan93vw8eO9L4puGZ0wmrAHkE6DNhMmw5qxs2jEpmke0zL_PP_PnF1GV85tKeVFWeSj6GdutLem60B0SNYH7Rt0rSNGkRVYa_bxAnbkGzSp0ZIPgM6RNfatNLoepDeWrESywA1mZN_6hszcoe_R21aSmZVN61H6wSJRgXzvvAUFzpO3xnijW-muowsVKvHmNMfR5ulxM3-Ol6-Ll_lsGQPjmY8hE0zwOqeAGXAAlFIUVBRTyeosAcGUSplirChKkXOJKJNMpNNSiZCBpuPo7li7s-ZrQOervnUSw9cazeCqJE9ZmXOeTAN6f0SDz2prBqvDXRWj1Z_k6iS5OklOfwHF8HUJ</recordid><startdate>20220322</startdate><enddate>20220322</enddate><creator>Dai, Yongping</creator><creator>Yu, Qiang</creator><creator>Yang, Xiaoxin</creator><creator>Guo, Kun</creator><creator>Zhang, Yan</creator><creator>Zhang, Yushuang</creator><creator>Zhang, Junrong</creator><creator>Li, Jie</creator><creator>Chen, Jie</creator><creator>Deng, Haiqin</creator><creator>Xian, Tianhao</creator><creator>Wang, Xiao</creator><creator>Wu, Jian</creator><creator>Zhang, Kai</creator><general>American Chemical Society</general><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-4251-9412</orcidid><orcidid>https://orcid.org/0000-0001-9378-0947</orcidid><orcidid>https://orcid.org/0000-0003-3747-7358</orcidid></search><sort><creationdate>20220322</creationdate><title>Controllable Synthesis of Narrow-Gap van der Waals Semiconductor Nb2GeTe4 with Asymmetric Architecture for Ultrafast Photonics</title><author>Dai, Yongping ; Yu, Qiang ; Yang, Xiaoxin ; Guo, Kun ; Zhang, Yan ; Zhang, Yushuang ; Zhang, Junrong ; Li, Jie ; Chen, Jie ; Deng, Haiqin ; Xian, Tianhao ; Wang, Xiao ; Wu, Jian ; Zhang, Kai</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a154t-a4b1b5d60ae4a5aaeccb70b79c1d42ab1ff31f11778b65ceec24b398fbceea03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dai, Yongping</creatorcontrib><creatorcontrib>Yu, Qiang</creatorcontrib><creatorcontrib>Yang, Xiaoxin</creatorcontrib><creatorcontrib>Guo, Kun</creatorcontrib><creatorcontrib>Zhang, Yan</creatorcontrib><creatorcontrib>Zhang, Yushuang</creatorcontrib><creatorcontrib>Zhang, Junrong</creatorcontrib><creatorcontrib>Li, Jie</creatorcontrib><creatorcontrib>Chen, Jie</creatorcontrib><creatorcontrib>Deng, Haiqin</creatorcontrib><creatorcontrib>Xian, Tianhao</creatorcontrib><creatorcontrib>Wang, Xiao</creatorcontrib><creatorcontrib>Wu, Jian</creatorcontrib><creatorcontrib>Zhang, Kai</creatorcontrib><collection>MEDLINE - Academic</collection><jtitle>ACS nano</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dai, Yongping</au><au>Yu, Qiang</au><au>Yang, Xiaoxin</au><au>Guo, Kun</au><au>Zhang, Yan</au><au>Zhang, Yushuang</au><au>Zhang, Junrong</au><au>Li, Jie</au><au>Chen, Jie</au><au>Deng, Haiqin</au><au>Xian, Tianhao</au><au>Wang, Xiao</au><au>Wu, Jian</au><au>Zhang, Kai</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Controllable Synthesis of Narrow-Gap van der Waals Semiconductor Nb2GeTe4 with Asymmetric Architecture for Ultrafast Photonics</atitle><jtitle>ACS nano</jtitle><addtitle>ACS Nano</addtitle><date>2022-03-22</date><risdate>2022</risdate><volume>16</volume><issue>3</issue><spage>4239</spage><epage>4250</epage><pages>4239-4250</pages><issn>1936-0851</issn><eissn>1936-086X</eissn><abstract>Ultrafast photonics has become an interdisciplinary topic of great consequence due to the spectacular progress of compact and efficient ultrafast pulse generation. Wide spectrum bandwidth is the key element for ultrafast pulse generation due to the Fourier transform limitation. Herein, monoclinic Nb2GeTe4, an emerging class of ternary narrow-gap semiconductors, was used as a real saturable absorber (SA), which manifests superior wide-range optical absorption. The crystallization form and growth mechanism of Nb2GeTe4 were revealed by a thermodynamic phase diagram. Furthermore, the Nb2GeTe4–SA showed reliable saturation intensity and larger modulation depth, ascribed to a built-in electric field driven by the asymmetric crystal architecture confirmed via X-ray diffraction, polarized Raman spectra, and scanning transmission electron microscopy. Based on the Nb2GeTe4–SA, femtosecond mode-locked operation with good overall performance was achieved by a properly designed ring cavity. These results suggest that Nb2GeTe4 shows great promise for ultrafast photonic applications and arouse interests in exploring the intriguing properties of the ternary van der Waals material family.</abstract><pub>American Chemical Society</pub><doi>10.1021/acsnano.1c10241</doi><tpages>12</tpages><orcidid>https://orcid.org/0000-0002-4251-9412</orcidid><orcidid>https://orcid.org/0000-0001-9378-0947</orcidid><orcidid>https://orcid.org/0000-0003-3747-7358</orcidid></addata></record> |
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title | Controllable Synthesis of Narrow-Gap van der Waals Semiconductor Nb2GeTe4 with Asymmetric Architecture for Ultrafast Photonics |
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