Tantalum oxide thin films for dielectric applications by low-pressure chemical vapor deposition : physical and electrical properties

High quality Ta2O5 films suitable for 64 Mb DRAM use were deposited by low-pressure chemical vapour deposition (LPCVD) from Ta(OC2H5)5 (tantalum pentaethoxide) and oxygen. The films were deposited on silicon, polysilicon and SiO2. Thickness reproducibility, across-the-wafer uniformity, and conformal...

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Veröffentlicht in:	Journal of the Electrochemical Society 1993-09, Vol.140 (9), p.2615-2621
Hauptverfasser:	HITCHENS, W. R, KRUSELL, W. C, DOBKIN, D. M
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Lithography, masks and pattern transfer Materials science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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