Transverse structures in resonatorless absorptive switching in bulk ZnSe
Absorptive switching and transverse structures in resonatorless optical bistability in bulk ZnSe is observed upon exciting the sample at the Urbach edge. The switching is due to nonlinear absorption induced by a temperature tuning of the band gap. We have modeled such behavior by numerically solving...
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| Veröffentlicht in: | Journal of applied physics 1993-03, Vol.73 (6), p.3013-3017 |
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| container_end_page | 3017 |
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| container_issue | 6 |
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| container_title | Journal of applied physics |
| container_volume | 73 |
| creator | JOHN, W. D. S WICKSTED, J. P CANTWELL, G |
| description | Absorptive switching and transverse structures in resonatorless optical bistability in bulk ZnSe is observed upon exciting the sample at the Urbach edge. The switching is due to nonlinear absorption induced by a temperature tuning of the band gap. We have modeled such behavior by numerically solving for the intensity, carrier density, and temperature, including both longitudinal and transverse fluctuations. Simulations show that both longitudinal and transverse heat diffusion are necessary in producing specific structures, as well as in determining the time of switching. During switching, the experiment and theory illustrate for the intensity profile the formation of a local minima on axis (hole) followed by a local maxima on axis and local minima off axis (rings). Such beam distortions and bistable switching are the result of the spatial and temporal dynamics and positive feedback existing among the absorption and heating. |
| doi_str_mv | 10.1063/1.353006 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_26304408</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>26304408</sourcerecordid><originalsourceid>FETCH-LOGICAL-c285t-516c1751dbe9f97839719f1474daa47689616ab9b02ed5f51e0a9d26a8c66deb3</originalsourceid><addsrcrecordid>eNo90M1Kw0AUBeBBFKxV8BGyEHGTem8m87eUolYouLBu3ITJZKKjaVLnJhXf3pQWV2fzcTgcxi4RZgiS3-KMCw4gj9gEQZtUCQHHbAKQYaqNMqfsjOgTAFFzM2GLVbQtbX0kn1AfB9cP0VMS2mSMrrV9FxtPlNiSurjpw3ZkP6F3H6F936lyaL6St_bFn7OT2jbkLw45Za8P96v5Il0-Pz7N75apy7ToU4HSoRJYld7URo0bFJoac5VX1uZKaiNR2tKUkPlK1AI9WFNl0monZeVLPmXX-95N7L4HT32xDuR809jWdwMVmeSQ56BHeLOHLnZE0dfFJoa1jb8FQrG7qsBif9VIrw6dlpxt6vESF-jfc60Nz3L-B-EuaE0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26304408</pqid></control><display><type>article</type><title>Transverse structures in resonatorless absorptive switching in bulk ZnSe</title><source>AIP Digital Archive</source><creator>JOHN, W. D. S ; WICKSTED, J. P ; CANTWELL, G</creator><creatorcontrib>JOHN, W. D. S ; WICKSTED, J. P ; CANTWELL, G</creatorcontrib><description>Absorptive switching and transverse structures in resonatorless optical bistability in bulk ZnSe is observed upon exciting the sample at the Urbach edge. The switching is due to nonlinear absorption induced by a temperature tuning of the band gap. We have modeled such behavior by numerically solving for the intensity, carrier density, and temperature, including both longitudinal and transverse fluctuations. Simulations show that both longitudinal and transverse heat diffusion are necessary in producing specific structures, as well as in determining the time of switching. During switching, the experiment and theory illustrate for the intensity profile the formation of a local minima on axis (hole) followed by a local maxima on axis and local minima off axis (rings). Such beam distortions and bistable switching are the result of the spatial and temporal dynamics and positive feedback existing among the absorption and heating.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.353006</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Charge carriers: generation, recombination, lifetime, and trapping ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Conductivity phenomena in semiconductors and insulators ; Electronic transport in condensed matter ; Exact sciences and technology ; Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) ; Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials and thin films ; Physics</subject><ispartof>Journal of applied physics, 1993-03, Vol.73 (6), p.3013-3017</ispartof><rights>1994 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-516c1751dbe9f97839719f1474daa47689616ab9b02ed5f51e0a9d26a8c66deb3</citedby><cites>FETCH-LOGICAL-c285t-516c1751dbe9f97839719f1474daa47689616ab9b02ed5f51e0a9d26a8c66deb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3889324$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>JOHN, W. D. S</creatorcontrib><creatorcontrib>WICKSTED, J. P</creatorcontrib><creatorcontrib>CANTWELL, G</creatorcontrib><title>Transverse structures in resonatorless absorptive switching in bulk ZnSe</title><title>Journal of applied physics</title><description>Absorptive switching and transverse structures in resonatorless optical bistability in bulk ZnSe is observed upon exciting the sample at the Urbach edge. The switching is due to nonlinear absorption induced by a temperature tuning of the band gap. We have modeled such behavior by numerically solving for the intensity, carrier density, and temperature, including both longitudinal and transverse fluctuations. Simulations show that both longitudinal and transverse heat diffusion are necessary in producing specific structures, as well as in determining the time of switching. During switching, the experiment and theory illustrate for the intensity profile the formation of a local minima on axis (hole) followed by a local maxima on axis and local minima off axis (rings). Such beam distortions and bistable switching are the result of the spatial and temporal dynamics and positive feedback existing among the absorption and heating.</description><subject>Charge carriers: generation, recombination, lifetime, and trapping</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Conductivity phenomena in semiconductors and insulators</subject><subject>Electronic transport in condensed matter</subject><subject>Exact sciences and technology</subject><subject>Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)</subject><subject>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Physics</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo90M1Kw0AUBeBBFKxV8BGyEHGTem8m87eUolYouLBu3ITJZKKjaVLnJhXf3pQWV2fzcTgcxi4RZgiS3-KMCw4gj9gEQZtUCQHHbAKQYaqNMqfsjOgTAFFzM2GLVbQtbX0kn1AfB9cP0VMS2mSMrrV9FxtPlNiSurjpw3ZkP6F3H6F936lyaL6St_bFn7OT2jbkLw45Za8P96v5Il0-Pz7N75apy7ToU4HSoRJYld7URo0bFJoac5VX1uZKaiNR2tKUkPlK1AI9WFNl0monZeVLPmXX-95N7L4HT32xDuR809jWdwMVmeSQ56BHeLOHLnZE0dfFJoa1jb8FQrG7qsBif9VIrw6dlpxt6vESF-jfc60Nz3L-B-EuaE0</recordid><startdate>19930315</startdate><enddate>19930315</enddate><creator>JOHN, W. D. S</creator><creator>WICKSTED, J. P</creator><creator>CANTWELL, G</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19930315</creationdate><title>Transverse structures in resonatorless absorptive switching in bulk ZnSe</title><author>JOHN, W. D. S ; WICKSTED, J. P ; CANTWELL, G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-516c1751dbe9f97839719f1474daa47689616ab9b02ed5f51e0a9d26a8c66deb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Charge carriers: generation, recombination, lifetime, and trapping</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Conductivity phenomena in semiconductors and insulators</topic><topic>Electronic transport in condensed matter</topic><topic>Exact sciences and technology</topic><topic>Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)</topic><topic>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of bulk materials and thin films</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>JOHN, W. D. S</creatorcontrib><creatorcontrib>WICKSTED, J. P</creatorcontrib><creatorcontrib>CANTWELL, G</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>JOHN, W. D. S</au><au>WICKSTED, J. P</au><au>CANTWELL, G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transverse structures in resonatorless absorptive switching in bulk ZnSe</atitle><jtitle>Journal of applied physics</jtitle><date>1993-03-15</date><risdate>1993</risdate><volume>73</volume><issue>6</issue><spage>3013</spage><epage>3017</epage><pages>3013-3017</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Absorptive switching and transverse structures in resonatorless optical bistability in bulk ZnSe is observed upon exciting the sample at the Urbach edge. The switching is due to nonlinear absorption induced by a temperature tuning of the band gap. We have modeled such behavior by numerically solving for the intensity, carrier density, and temperature, including both longitudinal and transverse fluctuations. Simulations show that both longitudinal and transverse heat diffusion are necessary in producing specific structures, as well as in determining the time of switching. During switching, the experiment and theory illustrate for the intensity profile the formation of a local minima on axis (hole) followed by a local maxima on axis and local minima off axis (rings). Such beam distortions and bistable switching are the result of the spatial and temporal dynamics and positive feedback existing among the absorption and heating.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.353006</doi><tpages>5</tpages></addata></record> |
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| subjects | Charge carriers: generation, recombination, lifetime, and trapping Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics |
| title | Transverse structures in resonatorless absorptive switching in bulk ZnSe |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T21%3A05%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Transverse%20structures%20in%20resonatorless%20absorptive%20switching%20in%20bulk%20ZnSe&rft.jtitle=Journal%20of%20applied%20physics&rft.au=JOHN,%20W.%20D.%20S&rft.date=1993-03-15&rft.volume=73&rft.issue=6&rft.spage=3013&rft.epage=3017&rft.pages=3013-3017&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.353006&rft_dat=%3Cproquest_cross%3E26304408%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=26304408&rft_id=info:pmid/&rfr_iscdi=true |