Strain‐Plasmonic Coupled Broadband Photodetector Based on Monolayer MoS2

2D Semiconductors are promising in the development of next‐generation photodetectors. However, the performances of 2D photodetectors are largely limited by their poor light absorption (due to ultrathin thickness) and small detection range (due to large bandgap). To overcome the limitations, a strain...

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Veröffentlicht in:	Small (Weinheim an der Bergstrasse, Germany) Germany), 2022-04, Vol.18 (14), p.e2107104-n/a
Hauptverfasser:	Lu, Donglin, Chen, Yang, Kong, Lingan, Luo, Chaobo, Lu, Zheyi, Tao, Quanyang, Song, Wenjing, Ma, Likuan, Li, Zhiwei, Li, Wanying, Liu, Liting, Li, Qianyuan, Yang, Xiangdong, Li, Jun, Li, Jia, Duan, Xidong, Liao, Lei, Liu, Yuan
Format:	Artikel
Sprache:	eng
Schlagworte:	Broadband Electromagnetic absorption Energy gap Gold Homojunctions light absorption Luminous intensity Molybdenum disulfide Monolayers Nanoparticles Nanotechnology Optimization Optoelectronic devices photodetectors Photoluminescence Photometers plasmonic coupled photodetectors Plasmonics Spectrophotometry strain Tensile strain
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