Integral imaging using a MoS2 Schottky diode

We report the performance of a MoS2 Schottky diode on three-dimensional (3D) integral imaging. The MoS2 Schottky diode has asymmetric Pt electrodes for the Schottky contact and Ti/Au electrodes for the ohmic contact. Such a Schottky diode exhibits an excellent rectification ratio of 103, a broad spe...

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Veröffentlicht in:Optics letters 2022-02, Vol.47 (4), p.866-869
Hauptverfasser: Choi, Sungwon, Ahn, Jongtae, Ahn, Il-Ho, Hwang, Do Kyung, Park, Min-Chul
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container_end_page 869
container_issue 4
container_start_page 866
container_title Optics letters
container_volume 47
creator Choi, Sungwon
Ahn, Jongtae
Ahn, Il-Ho
Hwang, Do Kyung
Park, Min-Chul
description We report the performance of a MoS2 Schottky diode on three-dimensional (3D) integral imaging. The MoS2 Schottky diode has asymmetric Pt electrodes for the Schottky contact and Ti/Au electrodes for the ohmic contact. Such a Schottky diode exhibits an excellent rectification ratio of 103, a broad spectral photoresponse in the 450–700 nm range, an almost ideal linearity of 1, and a wide linear dynamic range of 106 dB. We successfully conduct object pickup experiments using integral imaging and validate the feasibility of a single-pixel imager as a 3D image sensor.
doi_str_mv 10.1364/OL.449559
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source Optica Publishing Group Journals
subjects Contact resistance
Electrons
Imaging
Linearity
Molybdenum disulfide
Schottky diodes
title Integral imaging using a MoS2 Schottky diode
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