Pulsed thermal characterization of a reverse biased pn-junction for ESD HBM simulation

Compact electro-thermal simulation of an ESD event in a semiconductor structure requires proper definition and calibration of the equivalent thermal circuit. We demonstrate an approach to determine the device temperature during square pulse stress on the basis of the temperature dependence of the av...

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Veröffentlicht in:	Microelectronics and reliability 1996-11, Vol.36 (11-12), p.1711-1714
Hauptverfasser:	Wolf, H., Gieser, H., Wilkening, W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Testing, measurement, noise and reliability
Online-Zugang:	Volltext
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