Single barrier varactors for submillimeter wave power generation
Theoretical work on single barrier varactor (SBV) diodes indicates that the efficiency of a tripler with a SBV diode has a maximum for a considerably smaller capacitance variation than previously thought. SBV diodes based on GaAs, InGaAs and InAs have been fabricated and their DC properties have bee...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 1993-04, Vol.41 (4), p.572-580 |
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| container_end_page | 580 |
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| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 41 |
| creator | Nilsen, S.M. Gronqvist, H. Hjelmgren, H. Rydberg, A. Kollberg, E.L. |
| description | Theoretical work on single barrier varactor (SBV) diodes indicates that the efficiency of a tripler with a SBV diode has a maximum for a considerably smaller capacitance variation than previously thought. SBV diodes based on GaAs, InGaAs and InAs have been fabricated and their DC properties have been tested. Detailed modeling of the carrier transport properties of the SBV device is carried out in two steps. First, the semiconductor transport equations are solved simultaneously, using a finite difference scheme in one dimension. Second, the calculated I-V and C-V characteristics are used by a multiplier simulator to calculate the optimum impedances and output powers at the frequencies of interest. The authors have developed an analysis technique which complements the harmonic balance technique. Simulations for a case study of a 750-GHz multiplier show that InAs diodes perform favorably compared to GaAs diodes.< > |
| doi_str_mv | 10.1109/22.231648 |
| format | Article |
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SBV diodes based on GaAs, InGaAs and InAs have been fabricated and their DC properties have been tested. Detailed modeling of the carrier transport properties of the SBV device is carried out in two steps. First, the semiconductor transport equations are solved simultaneously, using a finite difference scheme in one dimension. Second, the calculated I-V and C-V characteristics are used by a multiplier simulator to calculate the optimum impedances and output powers at the frequencies of interest. The authors have developed an analysis technique which complements the harmonic balance technique. Simulations for a case study of a 750-GHz multiplier show that InAs diodes perform favorably compared to GaAs diodes.< ></description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/22.231648</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitance ; Difference equations ; Diodes ; Electronics ; Exact sciences and technology ; Finite difference methods ; Gallium arsenide ; Impedance ; Indium gallium arsenide ; Power generation ; Semiconductor diodes ; Semiconductor electronics. Microelectronics. Optoelectronics. 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SBV diodes based on GaAs, InGaAs and InAs have been fabricated and their DC properties have been tested. Detailed modeling of the carrier transport properties of the SBV device is carried out in two steps. First, the semiconductor transport equations are solved simultaneously, using a finite difference scheme in one dimension. Second, the calculated I-V and C-V characteristics are used by a multiplier simulator to calculate the optimum impedances and output powers at the frequencies of interest. The authors have developed an analysis technique which complements the harmonic balance technique. Simulations for a case study of a 750-GHz multiplier show that InAs diodes perform favorably compared to GaAs diodes.< ></description><subject>Applied sciences</subject><subject>Capacitance</subject><subject>Difference equations</subject><subject>Diodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Finite difference methods</subject><subject>Gallium arsenide</subject><subject>Impedance</subject><subject>Indium gallium arsenide</subject><subject>Power generation</subject><subject>Semiconductor diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Testing</topic><topic>Varactors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nilsen, S.M.</creatorcontrib><creatorcontrib>Gronqvist, H.</creatorcontrib><creatorcontrib>Hjelmgren, H.</creatorcontrib><creatorcontrib>Rydberg, A.</creatorcontrib><creatorcontrib>Kollberg, E.L.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nilsen, S.M.</au><au>Gronqvist, H.</au><au>Hjelmgren, H.</au><au>Rydberg, A.</au><au>Kollberg, E.L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Single barrier varactors for submillimeter wave power generation</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>1993-04-01</date><risdate>1993</risdate><volume>41</volume><issue>4</issue><spage>572</spage><epage>580</epage><pages>572-580</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>Theoretical work on single barrier varactor (SBV) diodes indicates that the efficiency of a tripler with a SBV diode has a maximum for a considerably smaller capacitance variation than previously thought. SBV diodes based on GaAs, InGaAs and InAs have been fabricated and their DC properties have been tested. Detailed modeling of the carrier transport properties of the SBV device is carried out in two steps. First, the semiconductor transport equations are solved simultaneously, using a finite difference scheme in one dimension. Second, the calculated I-V and C-V characteristics are used by a multiplier simulator to calculate the optimum impedances and output powers at the frequencies of interest. The authors have developed an analysis technique which complements the harmonic balance technique. Simulations for a case study of a 750-GHz multiplier show that InAs diodes perform favorably compared to GaAs diodes.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/22.231648</doi><tpages>9</tpages></addata></record> |
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| ispartof | IEEE transactions on microwave theory and techniques, 1993-04, Vol.41 (4), p.572-580 |
| issn | 0018-9480 1557-9670 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Capacitance Difference equations Diodes Electronics Exact sciences and technology Finite difference methods Gallium arsenide Impedance Indium gallium arsenide Power generation Semiconductor diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Testing Varactors |
| title | Single barrier varactors for submillimeter wave power generation |
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