Highly efficient NIR-II luminescent I–III–VI semiconductor nanoprobes based on AgInTe2:Zn/ZnS nanocrystals

Highly efficient luminescence of AgInTe2:Zn/ZnS nanocrystals with the maximum NIR-II quantum yield of 25.2% has been designed through elaborately manipulating the structure to reduce their internal and surface defects. These AgInTe2:Zn/ZnS nanoprobes were employed for sensitive homogeneous biodetect...

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Veröffentlicht in:	Chemical communications (Cambridge, England) England), 2022-02, Vol.58 (13), p.2204-2207
Hauptverfasser:	Li, Jiayao, Guan, Tianyong, Tu, Datao, Lian, Wei, Zhang, Peng, Han, Siyuan, Wen, Fei, Chen, Xueyuan
Format:	Artikel
Sprache:	eng
Schlagworte:	Nanocrystals Surface defects Xanthine oxidase Zinc Zinc sulfide
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creator	Li, Jiayao Guan, Tianyong Tu, Datao Lian, Wei Zhang, Peng Han, Siyuan Wen, Fei Chen, Xueyuan
description	Highly efficient luminescence of AgInTe2:Zn/ZnS nanocrystals with the maximum NIR-II quantum yield of 25.2% has been designed through elaborately manipulating the structure to reduce their internal and surface defects. These AgInTe2:Zn/ZnS nanoprobes were employed for sensitive homogeneous biodetection of xanthine oxidase with the limit of detection down to 25 nU L−1.
doi_str_mv	10.1039/d1cc05533j
format	Article
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source	Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection
subjects	Nanocrystals Surface defects Xanthine oxidase Zinc Zinc sulfide
title	Highly efficient NIR-II luminescent I–III–VI semiconductor nanoprobes based on AgInTe2:Zn/ZnS nanocrystals
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