A monolithic HEMT passive switch with integrated HBT standard logic compatible driver for phased-array applications

We have achieved the first demonstration of a monolithically integrated high electron mobility transistor (HEMT) passive switch with a heterojunction bipolar transistor (HBT) switch-driver circuit that represents key integrated mixed-signal functions. The HEMT-HBT monolithic microwave integrated cir...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE microwave and guided wave letters 1996-10, Vol.6 (10), p.375-377
Hauptverfasser: Kobayashi, K.W., Oki, A.K., Sjogren, L.B., Umemoto, D.K., Block, T.R., Streit, D.C.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 377
container_issue 10
container_start_page 375
container_title IEEE microwave and guided wave letters
container_volume 6
creator Kobayashi, K.W.
Oki, A.K.
Sjogren, L.B.
Umemoto, D.K.
Block, T.R.
Streit, D.C.
description We have achieved the first demonstration of a monolithically integrated high electron mobility transistor (HEMT) passive switch with a heterojunction bipolar transistor (HBT) switch-driver circuit that represents key integrated mixed-signal functions. The HEMT-HBT monolithic microwave integrated circuit (MMIC) is fabricated using selective molecular beam epitaxy (MBE). The single HEMT series switch is driven by an HBT circuit that provides both level shifting and wide voltage drive swing to adequately turn the passive HEMT switch device on and off. The MMIC can be made compatible for operation from either standard TTL or CMOS control signals. The series 0.2×200 μm 2 passive HEMT switch achieves 1.6-2.9 dB insertion loss over a 50 MHz to 12 GHz band when the HEMT is turned on. The corresponding return-losses are >10 dB across the band. When the switch is turned off, the isolation ranges from >40 dB at 1 GHz and decreases to 15 dB at 12 GHz. This integrated HEMT switch and HBT switch driver MMIC represents a basic building block that can be applied to programmable phase shifters used in phased-array antenna applications and can result in a dramatic reduction in size and improvement in performance of these systems.
doi_str_mv 10.1109/75.536950
format Article
fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_26218207</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>536950</ieee_id><sourcerecordid>26218207</sourcerecordid><originalsourceid>FETCH-LOGICAL-c306t-16e0a350c5d5af9ebeacd177b2d8f482127d95b5af1d272d5610115d1a93e7e63</originalsourceid><addsrcrecordid>eNo9kDFPwzAQhSMEEqUwsDJ5QEgMKT6nTpqxVIUiFbGUObrYl9YojYMvgPrvSdWqy72T3vfe8KLoFuQIQOZPmR7pJM21PIsGoPUkVonKz_tfaognSmaX0RXzl5Qw1okcRDwVW9_42nUbZ8Ri_r4SLTK7XxL85zqzEf3dCNd0tA7YkRWL55XgDhuLwYrar_uY8dsWO1fWJGzoo0FUPoh2g0w2xhBwJ7Bta2d6yDd8HV1UWDPdHHUYfb7MV7NFvPx4fZtNl7FJZNrFkJLEREujrcYqp5LQWMiyUtlJNZ4oUJnNddl7YFWmrE5BAmgLmCeUUZoMo4dDbxv89w9xV2wdG6prbMj_cKFSBftJevDxAJrgmQNVRRvcFsOuAFnsZy0yXRxm7dn7YymywboK2BjHp0CiNGi5x-4OmCOik3vs-AdhyYBT</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26218207</pqid></control><display><type>article</type><title>A monolithic HEMT passive switch with integrated HBT standard logic compatible driver for phased-array applications</title><source>IEEE Electronic Library (IEL)</source><creator>Kobayashi, K.W. ; Oki, A.K. ; Sjogren, L.B. ; Umemoto, D.K. ; Block, T.R. ; Streit, D.C.</creator><creatorcontrib>Kobayashi, K.W. ; Oki, A.K. ; Sjogren, L.B. ; Umemoto, D.K. ; Block, T.R. ; Streit, D.C.</creatorcontrib><description>We have achieved the first demonstration of a monolithically integrated high electron mobility transistor (HEMT) passive switch with a heterojunction bipolar transistor (HBT) switch-driver circuit that represents key integrated mixed-signal functions. The HEMT-HBT monolithic microwave integrated circuit (MMIC) is fabricated using selective molecular beam epitaxy (MBE). The single HEMT series switch is driven by an HBT circuit that provides both level shifting and wide voltage drive swing to adequately turn the passive HEMT switch device on and off. The MMIC can be made compatible for operation from either standard TTL or CMOS control signals. The series 0.2×200 μm 2 passive HEMT switch achieves 1.6-2.9 dB insertion loss over a 50 MHz to 12 GHz band when the HEMT is turned on. The corresponding return-losses are &gt;10 dB across the band. When the switch is turned off, the isolation ranges from &gt;40 dB at 1 GHz and decreases to 15 dB at 12 GHz. This integrated HEMT switch and HBT switch driver MMIC represents a basic building block that can be applied to programmable phase shifters used in phased-array antenna applications and can result in a dramatic reduction in size and improvement in performance of these systems.</description><identifier>ISSN: 1051-8207</identifier><identifier>EISSN: 1558-2329</identifier><identifier>DOI: 10.1109/75.536950</identifier><identifier>CODEN: IMGLE3</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; HEMTs ; Heterojunction bipolar transistors ; Integrated circuits ; Integrated circuits by function (including memories and processors) ; Logic ; Microwave devices ; Microwave integrated circuits ; MMICs ; MODFETs ; Molecular beam epitaxial growth ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Switches ; Switching circuits ; Transistors</subject><ispartof>IEEE microwave and guided wave letters, 1996-10, Vol.6 (10), p.375-377</ispartof><rights>1996 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c306t-16e0a350c5d5af9ebeacd177b2d8f482127d95b5af1d272d5610115d1a93e7e63</citedby><cites>FETCH-LOGICAL-c306t-16e0a350c5d5af9ebeacd177b2d8f482127d95b5af1d272d5610115d1a93e7e63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/536950$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27926,27927,54760</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/536950$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=3251500$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kobayashi, K.W.</creatorcontrib><creatorcontrib>Oki, A.K.</creatorcontrib><creatorcontrib>Sjogren, L.B.</creatorcontrib><creatorcontrib>Umemoto, D.K.</creatorcontrib><creatorcontrib>Block, T.R.</creatorcontrib><creatorcontrib>Streit, D.C.</creatorcontrib><title>A monolithic HEMT passive switch with integrated HBT standard logic compatible driver for phased-array applications</title><title>IEEE microwave and guided wave letters</title><addtitle>MGWL</addtitle><description>We have achieved the first demonstration of a monolithically integrated high electron mobility transistor (HEMT) passive switch with a heterojunction bipolar transistor (HBT) switch-driver circuit that represents key integrated mixed-signal functions. The HEMT-HBT monolithic microwave integrated circuit (MMIC) is fabricated using selective molecular beam epitaxy (MBE). The single HEMT series switch is driven by an HBT circuit that provides both level shifting and wide voltage drive swing to adequately turn the passive HEMT switch device on and off. The MMIC can be made compatible for operation from either standard TTL or CMOS control signals. The series 0.2×200 μm 2 passive HEMT switch achieves 1.6-2.9 dB insertion loss over a 50 MHz to 12 GHz band when the HEMT is turned on. The corresponding return-losses are &gt;10 dB across the band. When the switch is turned off, the isolation ranges from &gt;40 dB at 1 GHz and decreases to 15 dB at 12 GHz. This integrated HEMT switch and HBT switch driver MMIC represents a basic building block that can be applied to programmable phase shifters used in phased-array antenna applications and can result in a dramatic reduction in size and improvement in performance of these systems.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>HEMTs</subject><subject>Heterojunction bipolar transistors</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Logic</subject><subject>Microwave devices</subject><subject>Microwave integrated circuits</subject><subject>MMICs</subject><subject>MODFETs</subject><subject>Molecular beam epitaxial growth</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Switches</subject><subject>Switching circuits</subject><subject>Transistors</subject><issn>1051-8207</issn><issn>1558-2329</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNo9kDFPwzAQhSMEEqUwsDJ5QEgMKT6nTpqxVIUiFbGUObrYl9YojYMvgPrvSdWqy72T3vfe8KLoFuQIQOZPmR7pJM21PIsGoPUkVonKz_tfaognSmaX0RXzl5Qw1okcRDwVW9_42nUbZ8Ri_r4SLTK7XxL85zqzEf3dCNd0tA7YkRWL55XgDhuLwYrar_uY8dsWO1fWJGzoo0FUPoh2g0w2xhBwJ7Bta2d6yDd8HV1UWDPdHHUYfb7MV7NFvPx4fZtNl7FJZNrFkJLEREujrcYqp5LQWMiyUtlJNZ4oUJnNddl7YFWmrE5BAmgLmCeUUZoMo4dDbxv89w9xV2wdG6prbMj_cKFSBftJevDxAJrgmQNVRRvcFsOuAFnsZy0yXRxm7dn7YymywboK2BjHp0CiNGi5x-4OmCOik3vs-AdhyYBT</recordid><startdate>19961001</startdate><enddate>19961001</enddate><creator>Kobayashi, K.W.</creator><creator>Oki, A.K.</creator><creator>Sjogren, L.B.</creator><creator>Umemoto, D.K.</creator><creator>Block, T.R.</creator><creator>Streit, D.C.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>19961001</creationdate><title>A monolithic HEMT passive switch with integrated HBT standard logic compatible driver for phased-array applications</title><author>Kobayashi, K.W. ; Oki, A.K. ; Sjogren, L.B. ; Umemoto, D.K. ; Block, T.R. ; Streit, D.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c306t-16e0a350c5d5af9ebeacd177b2d8f482127d95b5af1d272d5610115d1a93e7e63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>HEMTs</topic><topic>Heterojunction bipolar transistors</topic><topic>Integrated circuits</topic><topic>Integrated circuits by function (including memories and processors)</topic><topic>Logic</topic><topic>Microwave devices</topic><topic>Microwave integrated circuits</topic><topic>MMICs</topic><topic>MODFETs</topic><topic>Molecular beam epitaxial growth</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Switches</topic><topic>Switching circuits</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Kobayashi, K.W.</creatorcontrib><creatorcontrib>Oki, A.K.</creatorcontrib><creatorcontrib>Sjogren, L.B.</creatorcontrib><creatorcontrib>Umemoto, D.K.</creatorcontrib><creatorcontrib>Block, T.R.</creatorcontrib><creatorcontrib>Streit, D.C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE microwave and guided wave letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kobayashi, K.W.</au><au>Oki, A.K.</au><au>Sjogren, L.B.</au><au>Umemoto, D.K.</au><au>Block, T.R.</au><au>Streit, D.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A monolithic HEMT passive switch with integrated HBT standard logic compatible driver for phased-array applications</atitle><jtitle>IEEE microwave and guided wave letters</jtitle><stitle>MGWL</stitle><date>1996-10-01</date><risdate>1996</risdate><volume>6</volume><issue>10</issue><spage>375</spage><epage>377</epage><pages>375-377</pages><issn>1051-8207</issn><eissn>1558-2329</eissn><coden>IMGLE3</coden><abstract>We have achieved the first demonstration of a monolithically integrated high electron mobility transistor (HEMT) passive switch with a heterojunction bipolar transistor (HBT) switch-driver circuit that represents key integrated mixed-signal functions. The HEMT-HBT monolithic microwave integrated circuit (MMIC) is fabricated using selective molecular beam epitaxy (MBE). The single HEMT series switch is driven by an HBT circuit that provides both level shifting and wide voltage drive swing to adequately turn the passive HEMT switch device on and off. The MMIC can be made compatible for operation from either standard TTL or CMOS control signals. The series 0.2×200 μm 2 passive HEMT switch achieves 1.6-2.9 dB insertion loss over a 50 MHz to 12 GHz band when the HEMT is turned on. The corresponding return-losses are &gt;10 dB across the band. When the switch is turned off, the isolation ranges from &gt;40 dB at 1 GHz and decreases to 15 dB at 12 GHz. This integrated HEMT switch and HBT switch driver MMIC represents a basic building block that can be applied to programmable phase shifters used in phased-array antenna applications and can result in a dramatic reduction in size and improvement in performance of these systems.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/75.536950</doi><tpages>3</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 1051-8207
ispartof IEEE microwave and guided wave letters, 1996-10, Vol.6 (10), p.375-377
issn 1051-8207
1558-2329
language eng
recordid cdi_proquest_miscellaneous_26218207
source IEEE Electronic Library (IEL)
subjects Applied sciences
Electronics
Exact sciences and technology
HEMTs
Heterojunction bipolar transistors
Integrated circuits
Integrated circuits by function (including memories and processors)
Logic
Microwave devices
Microwave integrated circuits
MMICs
MODFETs
Molecular beam epitaxial growth
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Switches
Switching circuits
Transistors
title A monolithic HEMT passive switch with integrated HBT standard logic compatible driver for phased-array applications
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T08%3A55%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20monolithic%20HEMT%20passive%20switch%20with%20integrated%20HBT%20standard%20logic%20compatible%20driver%20for%20phased-array%20applications&rft.jtitle=IEEE%20microwave%20and%20guided%20wave%20letters&rft.au=Kobayashi,%20K.W.&rft.date=1996-10-01&rft.volume=6&rft.issue=10&rft.spage=375&rft.epage=377&rft.pages=375-377&rft.issn=1051-8207&rft.eissn=1558-2329&rft.coden=IMGLE3&rft_id=info:doi/10.1109/75.536950&rft_dat=%3Cproquest_RIE%3E26218207%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=26218207&rft_id=info:pmid/&rft_ieee_id=536950&rfr_iscdi=true