Andreev Interference in the Surface Accumulation Layer of Half‐Shell InAsSb/Al Hybrid Nanowires

Understanding the spatial distribution of charge carriers in III–V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate‐dependent surface accumulation layer of half‐shell InAsSb/Al nanow...

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Veröffentlicht in:	Advanced materials (Weinheim) 2022-03, Vol.34 (11), p.e2108878-n/a
Hauptverfasser:	Stampfer, Lukas, Carrad, Damon J., Olsteins, Dags, Petersen, Christian E. N., Khan, Sabbir A., Krogstrup, Peter, Jespersen, Thomas S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Accumulation Current carriers hybrid superconductivity Interference Josephson junctions Materials science Nanowires quantum interference quantum transport semiconductor nanowires Spatial distribution Superconductors surface accumulation
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