Signal readout in a-Si:H pixel detectors

A switch consisting of two a-Si:H p-i-n diodes was studied to read out signals from pixels for the imaging of X-ray or gamma ray distributions. A charge storage time of 20 ms and a readout time of 0.7 mu s were achieved. For the detection of single ionizing particles, polysilicon thin-film-transisto...

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Veröffentlicht in:	IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1993-08, Vol.40 (4), p.323-327
Hauptverfasser:	Cho, G., Drewery, J.S., Hong, W.S., Jing, T., Kaplan, S.N., Lee, H., Mireshghi, A., Perez-Mendez, V., Wildermuth, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	440101 - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments AMPLIFICATION AMPLIFIERS Charge measurement Current measurement DESIGN DETECTION Detectors ELECTRONIC EQUIPMENT Exact sciences and technology GAMMA DETECTION INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY Instruments, apparatus, components and techniques common to several branches of physics and astronomy MEASURING INSTRUMENTS Optical imaging P-i-n diodes Physics Pixel Prototypes RADIATION DETECTION RADIATION DETECTORS READOUT SYSTEMS SEMICONDUCTOR DETECTORS SEMICONDUCTOR DEVICES SEMICONDUCTOR DIODES SI SEMICONDUCTOR DETECTORS SIGNALS Switches Thin film transistors THIN FILMS TRANSISTOR AMPLIFIERS X- and γ-ray instruments and techniques X-RAY DETECTION X-ray imaging
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